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BAP65-03,115

NXP Semiconductors

BAP65-03,115 by NXP Semiconductors

BAP65-03,115 by NXP Semiconductors is a single PIN diode with a max diode capacitance of 0.9 pF. It is used in applications such as attenuators and switching, with a max operating temperature of 150°C and a min operating temperature of -65°C.

Median Price

$0.152

Lifecycle Status

Suppliers In-Stock

20

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 33 parts In-Stock

1+ parts

$0.102

100+ parts

$0.099

1k+ parts

-

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33

$0.102

$0.099

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Mouser Electronics

USA . 81 parts In-Stock

1+ parts

$0.250

100+ parts

$0.126

1k+ parts

$0.114

10k+ parts

$0.099

81

$0.250

$0.126

$0.114

$0.099

DigiKey

USA . 478 parts In-Stock

1+ parts

$0.290

100+ parts

$0.150

1k+ parts

$0.138

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478

$0.290

$0.150

$0.138

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Newark

USA . 180 parts In-Stock

1+ parts

$0.290

100+ parts

$0.168

1k+ parts

$0.157

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180

$0.290

$0.168

$0.157

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EBV Elektronik

Germany . 9,000 parts In-Stock

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9,000

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Verical

USA . 5,133 parts In-Stock

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$0.095

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$0.094

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$0.093

5,133

-

$0.095

$0.094

$0.093

RS (Exports)

UK . 4,780 parts In-Stock

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$0.113

4,780

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$0.113

Farnell

UK . 4,660 parts In-Stock

1+ parts

-

100+ parts

$0.182

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$0.103

10k+ parts

$0.097

4,660

-

$0.182

$0.103

$0.097

Chip1Stop

Japan . 4,448 parts In-Stock

1+ parts

-

100+ parts

$0.064

1k+ parts

$0.048

10k+ parts

$0.047

4,448

-

$0.064

$0.048

$0.047

Element14

Singapore . 3,019 parts In-Stock

1+ parts

-

100+ parts

$0.184

1k+ parts

$0.166

10k+ parts

$0.155

3,019

-

$0.184

$0.166

$0.155

Rochester

USA . 980 parts In-Stock

1+ parts

-

100+ parts

$0.123

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$0.102

10k+ parts

$0.091

980

-

$0.123

$0.102

$0.091

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,020 parts In-Stock

1+ parts

$0.063

100+ parts

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4,020

$0.063

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Nova Conductors

Japan . 15 parts In-Stock

1+ parts

$0.107

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15

$0.107

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TME

Poland . 305 parts In-Stock

1+ parts

$0.250

100+ parts

$0.129

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305

$0.250

$0.129

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Vyrian

USA . 6,834 parts In-Stock

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6,834

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NAC Semi

USA . 6,000 parts In-Stock

1+ parts

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$0.149

6,000

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$0.149

Anansix

USA . 1,154 parts In-Stock

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1,154

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Inventory MP

USA . 479 parts In-Stock

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479

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Bristol Electronics

USA . 479 parts In-Stock

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479

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VNN

France . 100 parts In-Stock

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100

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Distributors (Availability)

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Corohmni

South Africa . 183 parts In-Stock

1+ parts

$0.033

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183

$0.033

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Semicontronic

India . 9,939 parts In-Stock

1+ parts

$0.054

100+ parts

$0.053

1k+ parts

$0.052

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9,939

$0.054

$0.053

$0.052

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Ampacity Inc.

Singapore . 9,544 parts In-Stock

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$0.054

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9,544

$0.054

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Corphita

USA . 438 parts In-Stock

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$0.059

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438

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Argo Parts USA

USA . 437 parts In-Stock

1+ parts

$0.107

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$0.104

437

$0.107

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$0.104

Advanced Electronics

New Zealand . 1,000 parts In-Stock

1+ parts

$0.109

100+ parts

$0.109

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$0.109

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1,000

$0.109

$0.109

$0.109

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Aztec Data Supply Inc.

USA . 1,231 parts In-Stock

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$0.190

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1,231

$0.190

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Microchip USA

USA . 4,441 parts In-Stock

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$2.275

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4,441

$2.275

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Perfect Parts

USA . 26,482 parts In-Stock

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26,482

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Continental Prestige Electronics

USA . 5,995 parts In-Stock

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100+ parts

$0.146

1k+ parts

$0.087

10k+ parts

$0.069

5,995

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$0.146

$0.087

$0.069

UNI Independent Distributors

Spain . 2,035 parts In-Stock

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2,035

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

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Overview

Experience superior performance and reliability with the BAP65-03,115 PIN Diode by NXP Semiconductors. As a trusted industry leader, NXP Semiconductors delivers top-quality electronic components. This versatile diode is perfect for applications such as attenuators and switching. With its small outline package and dual terminal position, it offers easy integration into your designs. Benefit from its low diode forward resistance of just 0.9 ohms, as well as its high power dissipation capability of 0.5W. Trust in NXP Semiconductors for cutting-edge technology and unrivaled value.

Feature Benefit Bullets

Package Body Material:

PLASTIC/EPOXY - This material provides durability and resistance to external factors, making it suitable for various environments.

Config:

SINGLE - This configuration allows for precise and efficient control of current flow, enhancing performance and reliability.

Surface Mount:

YES - With surface mount capability, this product is easy to install and offers space-saving advantages.

Maximum Diode Capacitance:

0.9 pF - This low capacitance ensures fast response times and high-frequency operation.

Package Shape:

RECTANGULAR - The rectangular shape allows for easy integration into circuit designs, maximizing efficiency.

Reverse Test Voltage:

0 V - This feature ensures protection against reverse voltage, increasing the product's lifespan.

No. of Terminals:

2 - The two terminals enable simple and convenient connectivity, enabling a smooth integration process.

Package Style (Meter):

SMALL OUTLINE - The small outline package style offers space efficiency while providing robust protection to the diode.

Application:

ATTENUATOR; SWITCHING - This product is versatile, making it suitable for attenuation and switching applications.

Maximum Operating Temperature:

150 °C - The high maximum operating temperature allows for reliable operation even in demanding environments.

Minimum Operating Temperature:

65 °C - The low minimum operating temperature ensures reliable performance in extreme cold conditions.

Terminal Finish:

TIN - The tin terminal finish provides excellent conductivity and corrosion resistance, enhancing the overall performance and longevity of the product.

Terminal Position:

DUAL - The dual terminal position allows for flexible installation options and facilitates easy circuit integration.

Maximum Diode Forward Resistance:

0.9 ohm - This low forward resistance minimizes power losses and improves overall efficiency.

Maximum Power Dissipation:

0.5 W - With a high maximum power dissipation, this product can handle high power levels without compromising performance.

Nominal Diode Capacitance:

0.65 pF - The low nominal diode capacitance ensures improved signal integrity and reduced signal distortions.

Nominal Minority Carrier Lifetime:

0.17 us - The short minority carrier lifetime enables fast switching speeds and improved performance in high-frequency applications.

Minimum Breakdown Voltage:

30 V - With a high minimum breakdown voltage, this product provides excellent protection against voltage spikes, enhancing reliability.

Maximum Time At Peak Reflow Temperature (s):

30 - This specifies the maximum exposure time to peak reflow temperature during the production process, ensuring product quality and reliability.

Peak Reflow Temperature °C:

260 - The high peak reflow temperature enables efficient soldering and bonding processes, ensuring strong connections.

Diode Resistive Test Frequency:

100 MHz - This high test frequency ensures accurate measurements and reliable characterization of the diode's resistance.

Diode Resistive Test Current:

5 mA - The specified resistive test current ensures precise and consistent measurements of the diode's resistance.

Diode Type:

PIN DIODE - As a PIN diode, this product offers excellent RF performance, low distortion, and high power handling capabilities.

Technology:

POSITIVE-INTRINSIC-NEGATIVE - This technology ensures efficient and reliable functionality, making it an ideal choice for various applications.

Terminal Form:

GULL WING - The gull wing terminal form provides secure and reliable electrical connections, contributing to the overall performance and durability of the product.

No. of Elements:

1 - With a single element, this product offers simplicity in design and ease of integration into various circuits.

Moisture Sensitivity Level (MSL):

1 - This product has a low moisture sensitivity level, ensuring excellent reliability and protection against moisture damage.

Diode Element Material:

SILICON - Made of silicon, this diode offers excellent performance, high temperature tolerance, and robustness, making it a reliable choice.

Technical Specifications

PIN Diodes BAP65-03,115 attributes and parameters. Explore more PIN Diodes devices from NXP Semiconductors

Specs

Application:

ATTENUATOR; SWITCHING

Minimum Breakdown Voltage:

30 V

Config:

SINGLE

Maximum Diode Capacitance:

.9 pF

Nominal Diode Capacitance:

.65 pF

Diode Element Material:

SILICON

Maximum Diode Forward Resistance:

.9 ohm

Diode Resistive Test Current:

5 mA

Diode Resistive Test Frequency:

100 MHz

Diode Type:

JESD-30 Code:

R-PDSO-G2

JESD-609 Code:

e3

Nominal Minority Carrier Lifetime:

.17 us

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

.5 W

Qualification:

Not Qualified

Reverse Test Voltage:

0 V

Sub-Category:

PIN Diodes

Surface Mount:

YES

Technology:

POSITIVE-INTRINSIC-NEGATIVE

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

BAP65-03,115 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00

SB

8541.10.00.80

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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