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BAP64-03,115

NXP Semiconductors

BAP64-03,115 by NXP Semiconductors

NXP Semiconductors' BAP64-03,115 is a PIN diode with 0.35 pF capacitance, 1.35 ohm forward resistance, and 175V breakdown voltage. It is used in attenuator and switching applications, operating b/w -65 to 150 °C with a max power dissipation of 0.5W.

Median Price

$0.108

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 72,000 parts In-Stock

1+ parts

$0.076

100+ parts

$0.072

1k+ parts

$0.065

10k+ parts

$0.065

72,000

$0.076

$0.072

$0.065

$0.065

DigiKey

USA . 9,062 parts In-Stock

1+ parts

$0.210

100+ parts

$0.109

1k+ parts

$0.090

10k+ parts

$0.081

9,062

$0.210

$0.109

$0.090

$0.081

Mouser Electronics

USA . 8,990 parts In-Stock

1+ parts

$0.210

100+ parts

$0.101

1k+ parts

$0.091

10k+ parts

$0.078

8,990

$0.210

$0.101

$0.091

$0.078

Chip1Stop

Japan . 2,700 parts In-Stock

1+ parts

-

100+ parts

$0.085

1k+ parts

$0.065

10k+ parts

$0.063

2,700

-

$0.085

$0.065

$0.063

Verical

USA . 2,400 parts In-Stock

1+ parts

-

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$0.108

10k+ parts

$0.101

2,400

-

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$0.108

$0.101

Distributors (In-Stock)

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Vyrian

USA . 471 parts In-Stock

1+ parts

$0.070

100+ parts

-

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471

$0.070

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Digiode

USA . 4,765 parts In-Stock

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$0.072

100+ parts

-

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4,765

$0.072

-

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TME

Poland . 2,184 parts In-Stock

1+ parts

$0.411

100+ parts

$0.126

1k+ parts

$0.101

10k+ parts

$0.088

2,184

$0.411

$0.126

$0.101

$0.088

Chip Stock

USA . 79,268 parts In-Stock

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79,268

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Nova Conductors

Japan . 750 parts In-Stock

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750

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VNN

France . 685 parts In-Stock

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685

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Anansix

USA . 95 parts In-Stock

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95

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Prism Electronics

USA . 42 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 21,180 parts In-Stock

1+ parts

$0.065

100+ parts

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21,180

$0.065

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Corphita

USA . 694 parts In-Stock

1+ parts

$0.068

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694

$0.068

-

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Component Stockers USA

USA . 11,260 parts In-Stock

1+ parts

$0.080

100+ parts

$0.070

1k+ parts

$0.060

10k+ parts

-

11,260

$0.080

$0.070

$0.060

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Infinite Electronics LLP (Excess)

. 306,007 parts In-Stock

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Perfect Parts

USA . 289,007 parts In-Stock

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Component Connect

USA . 236,204 parts In-Stock

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BidChips

USA . 44,042 parts In-Stock

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Formix International (Excess)

India . 9,480 parts In-Stock

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9,480

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QUARKTWIN TECHNOLOGY LTD

USA . 7,374 parts In-Stock

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7,374

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A-Z Elektronik GmbH

Germany . 5,100 parts In-Stock

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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GreenTree Electronics

Israel . 1,762 parts In-Stock

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UNI Independent Distributors

Spain . 1,629 parts In-Stock

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iodParts Technologies Inc.

India . 430 parts In-Stock

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430

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Netroflash

USA . 50 parts In-Stock

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50

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Overview

Elevate your electronic designs with the BAP64-03,115 PIN diode from NXP Semiconductors. Known for their impeccable quality and reliability, NXP Semiconductors delivers cutting-edge solutions for attenuator and switching applications in the S Band frequency range. The BAP64-03,115 offers a seamless integration with its single configuration and small outline package style, making it ideal for various projects. Experience superior performance and efficiency with this innovative diode, providing customers with unparalleled value and benefits for their electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material makes the product durable and resistant to environmental factors, increasing its longevity.

Frequency Band: S BAND

The S band frequency band allows for high-performance communication and radar applications, making this product suitable for advanced technologies.

Maximum Diode Capacitance: 0.35 pF

Low maximum diode capacitance ensures minimal signal loss and improved efficiency in high-frequency applications.

Application: ATTENUATOR; SWITCHING

The product is versatile and can be used for both attenuator and switching applications, providing flexibility in design and functionality.

Minimum Breakdown Voltage: 175 V

The high minimum breakdown voltage ensures reliability and protection against voltage spikes, enhancing the overall performance and longevity of the product.

Technical Specifications

PIN Diodes BAP64-03,115 attributes and parameters. Explore more PIN Diodes devices from NXP Semiconductors

Specs

Additional Features:

HIGH VOLTAGE

Application:

ATTENUATOR; SWITCHING

Minimum Breakdown Voltage:

175 V

Config:

SINGLE

Maximum Diode Capacitance:

.35 pF

Nominal Diode Capacitance:

.52 pF

Diode Element Material:

SILICON

Maximum Diode Forward Resistance:

1.35 ohm

Diode Resistive Test Current:

.5 mA

Diode Resistive Test Frequency:

100 MHz

Diode Type:

Frequency Band:

S BAND

JESD-30 Code:

R-PDSO-G2

JESD-609 Code:

e3

Nominal Minority Carrier Lifetime:

1.55 us

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

.5 W

Qualification:

Not Qualified

Sub-Category:

PIN Diodes

Surface Mount:

YES

Technology:

POSITIVE-INTRINSIC-NEGATIVE

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

BAP64-03,115 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00

SB

8541.10.00.80

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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