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BAR63-04W-E6327

Infineon Technologies

BAR63-04W-E6327 by Infineon Technologies

Infineon's BAR63-04W-E6327 is a PIN diode with 5V reverse test voltage, 150°C max operating temp, and 2 ohm max forward resistance. Ideal for RF switches in mobile communication devices due to its 0.25 pF capacitance and 100 MHz resistive test frequency.

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VNN

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LIBRA Elektronik GmbH

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Velocity Electronics

USA . 1,567 parts In-Stock

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Vyrian

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Zilex Electronics Inc.

Canada . 190 parts In-Stock

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Nova Conductors

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Modulus Dynamics

Lithuania . 23,609 parts In-Stock

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Ampacity Inc.

Singapore . 185 parts In-Stock

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AZTECH Wire

Italy . 705 parts In-Stock

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Continental Prestige Electronics

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Overview

Discover the BAR63-04W-E6327 by Infineon Technologies, a high-quality PIN diode that offers unmatched performance and reliability. Manufactured by industry leader Infineon Technologies, this surface mount diode boasts a reverse test voltage of 5V and a maximum operating temperature of 150°C. Ideal for a wide range of applications, this diode provides exceptional value and benefits to customers looking for a versatile and efficient solution. Experience the advantage of Infineon's superior technology with the BAR63-04W-E6327.

Feature Benefit Bullets

Surface Mount: YES

The surface mount capability allows for easy and convenient integration into various electronic circuit designs, saving space and simplifying assembly processes.

Reverse Test Voltage: 5 V

With a reverse test voltage of 5V, this PIN diode is suitable for low-power applications where protection against reverse voltage is important.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150°C makes this PIN diode suitable for use in high-temperature environments, ensuring reliability and performance under stress.

Maximum Diode Forward Resistance: 2 ohm

The low forward resistance of 2 ohms minimizes signal loss and improves overall efficiency in signal routing and switching applications.

Nominal Diode Capacitance: 0.25 pF

The low nominal diode capacitance of 0.25 pF ensures minimal signal distortion and high-frequency performance, making it ideal for RF and microwave applications.

Nominal Minority Carrier Lifetime: 0.075 us

The short minority carrier lifetime of 0.075 us allows for fast switching speeds, making this PIN diode suitable for high-frequency signal modulation and switching applications.

Minimum Breakdown Voltage: 50 V

The high minimum breakdown voltage of 50V ensures reliable operation and protection against voltage spikes or surges, making it suitable for robust and durable electronic systems.

Peak Reflow Temperature °C: 260

The high peak reflow temperature of 260°C allows for reliable soldering and rework processes, ensuring consistent performance and durability during assembly.

Diode Resistive Test Frequency: 100 MHz

With a diode resistive test frequency of 100 MHz, this PIN diode is suitable for high-frequency signal processing and communication applications, where precise and fast response times are essential.

Diode Resistive Test Current: 5 mA

The low diode resistive test current of 5 mA minimizes power consumption and heat generation, making it energy-efficient and suitable for battery-powered devices.

Diode Type: PIN DIODE

Being a PIN diode, this product offers high-speed switching capabilities, low distortion, and high-power handling capacity, making it a versatile choice for various RF and microwave applications.

Technical Specifications

PIN Diodes BAR63-04W-E6327 attributes and parameters. Explore more PIN Diodes devices from Infineon Technologies

Specs

Minimum Breakdown Voltage:

50 V

Nominal Diode Capacitance:

.25 pF

Maximum Diode Forward Resistance:

2 ohm

Diode Resistive Test Current:

5 mA

Diode Resistive Test Frequency:

100 MHz

Diode Type:

Nominal Minority Carrier Lifetime:

.075 us

Moisture Sensitivity Level (MSL):

1

Maximum Operating Temperature:

150 Cel

Peak Reflow Temperature (C):

260

Reverse Test Voltage:

5 V

Sub-Category:

PIN Diodes

Surface Mount:

YES

Trade Compliance

BAR63-04W-E6327 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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