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1SV251-TB-E

Onsemi

1SV251-TB-E by Onsemi

1SV251-TB-E by Onsemi is a PIN diode with TIN BISMUTH finish. It can withstand 30s at 260 °C peak reflow temperature. Utilized in applications requiring POSITIVE-INTRINSIC-NEGATIVE technology for RF switching and attenuating signals.

Median Price

$0.142

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 650 parts In-Stock

1+ parts

$1.610

100+ parts

$0.442

1k+ parts

$0.298

10k+ parts

-

650

$1.610

$0.442

$0.298

-

Rochester

USA . 83,950 parts In-Stock

1+ parts

-

100+ parts

$0.142

1k+ parts

$0.118

10k+ parts

$0.105

83,950

-

$0.142

$0.118

$0.105

DigiKey

USA . 83,950 parts In-Stock

1+ parts

-

100+ parts

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$0.120

83,950

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-

-

$0.120

Flip Electronics (Authorized)

USA . 36,000 parts In-Stock

1+ parts

-

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36,000

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Distributors (In-Stock)

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Digiode

USA . 1,640 parts In-Stock

1+ parts

$0.111

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-

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1,640

$0.111

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Vyrian

USA . 136 parts In-Stock

1+ parts

$0.117

100+ parts

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136

$0.117

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Flip Electronics

USA . 36,000 parts In-Stock

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-

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36,000

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DigiKey Marketplace

USA . 36,000 parts In-Stock

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36,000

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Continental Prestige Electronics

USA . 2,766 parts In-Stock

1+ parts

$0.093

100+ parts

-

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2,766

$0.093

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-

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Corphita

USA . 919 parts In-Stock

1+ parts

$0.105

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-

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919

$0.105

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Corohmni

South Africa . 111 parts In-Stock

1+ parts

$0.117

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111

$0.117

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Native Components

USA . 482 parts In-Stock

1+ parts

$21.540

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482

$21.540

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Northwest PG Solutions

USA . 117 parts In-Stock

1+ parts

$23.694

100+ parts

$21.325

1k+ parts

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117

$23.694

$21.325

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TANS Electronics

Latvia . 6,438 parts In-Stock

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6,438

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Perfect Parts

USA . 4,648 parts In-Stock

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4,648

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Kepictronics

USA . 3,450 parts In-Stock

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3,450

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SupplyDigital Components

Austria . 3,396 parts In-Stock

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3,396

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Kulean Microsystems

USA . 2,650 parts In-Stock

1+ parts

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2,650

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Problanco Electronics

Mexico . 1,997 parts In-Stock

1+ parts

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1,997

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Authorized Procurement Solutions

USA . 650 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

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650

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GreenTree Electronics

Israel . 650 parts In-Stock

1+ parts

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650

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UHIMA Technologies

Türkiye . 21 parts In-Stock

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21

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Overview

Unlock the power of precision with the 1SV251-TB-E PIN diode by Onsemi. Crafted with superior quality and cutting-edge technology, this diode offers unmatched performance in a variety of applications. From RF switches to attenuators, this versatile diode delivers reliability and efficiency like no other. Experience seamless integration, enhanced functionality, and improved signal control with the 1SV251-TB-E. Elevate your projects to new heights with Onsemi's trusted expertise and innovative solutions.

Feature Benefit Bullets

Terminal Finish: TIN BISMUTH

TIN BISMUTH terminal finish provides excellent solderability and high thermal conductivity, ensuring a reliable connection in various electronic applications.

Maximum Time At Peak Reflow Temperature (s): 30

With a maximum time of 30 seconds at peak reflow temperature, this PIN Diode is suitable for quick and efficient soldering processes, saving time during production.

Peak Reflow Temperature °C: 260

The peak reflow temperature of 260 °C allows for reliable soldering without damaging the diode, ensuring its performance and longevity in high-temperature environments.

Diode Type: PIN DIODE

The PIN Diode type offers high power handling capacity, low distortion, and fast switching speeds, making it ideal for RF switching and attenuator applications.

Technology: POSITIVE-INTRINSIC-NEGATIVE

The POSITIVE-INTRINSIC-NEGATIVE technology of this PIN Diode provides low capacitance and high dynamic range, enabling efficient RF signal control and modulation in communications systems.

Diode Element Material: SILICON

SILICON diode element material offers high reliability, low noise, and stable performance over a wide temperature range, making it a preferred choice for high-frequency and high-power applications.

Technical Specifications

PIN Diodes 1SV251-TB-E attributes and parameters. Explore more PIN Diodes devices from Onsemi

Specs

Diode Element Material:

SILICON

Diode Type:

JESD-609 Code:

e6

Moisture Sensitivity Level (MSL):

1

Peak Reflow Temperature (C):

260

Technology:

POSITIVE-INTRINSIC-NEGATIVE

Terminal Finish:

TIN BISMUTH

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

1SV251-TB-E Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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