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BAP65-05,215

NXP Semiconductors

BAP65-05,215 by NXP Semiconductors

PIN DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Median Price

$0.107

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 31,515 parts In-Stock

1+ parts

-

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$0.110

31,515

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$0.110

Rochester

USA . 31,515 parts In-Stock

1+ parts

-

100+ parts

$0.107

1k+ parts

$0.089

10k+ parts

$0.079

31,515

-

$0.107

$0.089

$0.079

Verical

USA . 24,000 parts In-Stock

1+ parts

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10k+ parts

$0.099

24,000

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$0.099

Distributors (In-Stock)

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Digiode

USA . 4,822 parts In-Stock

1+ parts

$0.084

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4,822

$0.084

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Vyrian

USA . 951 parts In-Stock

1+ parts

$0.088

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951

$0.088

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Anansix

USA . 612 parts In-Stock

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612

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Velocity Electronics

USA . 400 parts In-Stock

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400

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Distributors (Availability)

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Corphita

USA . 3,008 parts In-Stock

1+ parts

$0.079

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3,008

$0.079

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Component Stockers USA

USA . 19,919 parts In-Stock

1+ parts

$0.100

100+ parts

$0.090

1k+ parts

$0.080

10k+ parts

$0.080

19,919

$0.100

$0.090

$0.080

$0.080

Northwest PG Solutions

USA . 1,235 parts In-Stock

1+ parts

$2.486

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1,235

$2.486

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Perfect Parts

USA . 10,080 parts In-Stock

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10,080

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UNI Independent Distributors

Spain . 6,744 parts In-Stock

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Microchip USA

USA . 5,425 parts In-Stock

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Native Components

USA . 386 parts In-Stock

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$2.192

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386

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$2.192

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Technical Specifications

PIN Diodes BAP65-05,215 attributes and parameters. Explore more PIN Diodes devices from NXP Semiconductors

Specs

Application:

ATTENUATOR; SWITCHING

Minimum Breakdown Voltage:

30 V

Config:

COMMON CATHODE, 2 ELEMENTS

Maximum Diode Capacitance:

.9 pF

Nominal Diode Capacitance:

.7 pF

Diode Element Material:

SILICON

Maximum Diode Forward Resistance:

.9 ohm

Diode Resistive Test Current:

5 mA

Diode Resistive Test Frequency:

100 MHz

Diode Type:

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Nominal Minority Carrier Lifetime:

.17 us

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

.25 W

Qualification:

Not Qualified

Reverse Test Voltage:

0 V

Sub-Category:

PIN Diodes

Surface Mount:

YES

Technology:

POSITIVE-INTRINSIC-NEGATIVE

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

BAP65-05,215 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00

SB

8541.10.00.80

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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