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NSDP301MX3T5G

Onsemi

NSDP301MX3T5G by Onsemi

NSDP301MX3T5G by Onsemi is a PIN diode with a reverse test voltage of 0V and a min breakdown voltage of 80V. It operates in high-frequency applications such as attenuators and switching, with a nominal diode capacitance of 0.33pF. This surface-mount chip carrier has a temperature range from -55°C to 150°C, making it suitable for various electronic devices.

Median Price

$0.112

Lifecycle Status

Suppliers In-Stock

14

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 8,860 parts In-Stock

1+ parts

$0.070

100+ parts

-

1k+ parts

-

10k+ parts

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8,860

$0.070

-

-

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DigiKey

USA . 16,064 parts In-Stock

1+ parts

$0.220

100+ parts

$0.114

1k+ parts

$0.095

10k+ parts

$0.084

16,064

$0.220

$0.114

$0.095

$0.084

Mouser Electronics

USA . 10,871 parts In-Stock

1+ parts

$0.220

100+ parts

$0.105

1k+ parts

$0.095

10k+ parts

$0.086

10,871

$0.220

$0.105

$0.095

$0.086

Newark

USA . 9,024 parts In-Stock

1+ parts

$0.256

100+ parts

$0.150

1k+ parts

$0.130

10k+ parts

-

9,024

$0.256

$0.150

$0.130

-

Rochester

USA . 189,014 parts In-Stock

1+ parts

-

100+ parts

$0.102

1k+ parts

$0.085

10k+ parts

$0.075

189,014

-

$0.102

$0.085

$0.075

Verical

USA . 189,014 parts In-Stock

1+ parts

-

100+ parts

-

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$0.094

189,014

-

-

-

$0.094

RS (Exports)

UK . 10,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

$0.081

10,000

-

-

-

$0.081

Chip1Stop

Japan . 9,900 parts In-Stock

1+ parts

-

100+ parts

$0.122

1k+ parts

$0.083

10k+ parts

$0.076

9,900

-

$0.122

$0.083

$0.076

Farnell

UK . 9,024 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.068

10k+ parts

$0.064

9,024

-

-

$0.068

$0.064

Element14

Singapore . 9,024 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.133

10k+ parts

$0.128

9,024

-

-

$0.133

$0.128

Flip Electronics (Authorized)

USA . 7,689 parts In-Stock

1+ parts

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7,689

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Distributors (In-Stock)

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Vyrian

USA . 100 parts In-Stock

1+ parts

$0.070

100+ parts

-

1k+ parts

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100

$0.070

-

-

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Digiode

USA . 134 parts In-Stock

1+ parts

$0.079

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134

$0.079

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Flip Electronics

USA . 197,689 parts In-Stock

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197,689

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 259 parts In-Stock

1+ parts

$0.070

100+ parts

-

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259

$0.070

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Corphita

USA . 672 parts In-Stock

1+ parts

$0.075

100+ parts

-

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672

$0.075

-

-

-

Continental Prestige Electronics

USA . 9,830 parts In-Stock

1+ parts

$0.261

100+ parts

$0.111

1k+ parts

$0.077

10k+ parts

$0.062

9,830

$0.261

$0.111

$0.077

$0.062

SupplyDigital Components

Austria . 8,382 parts In-Stock

1+ parts

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8,382

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QUARKTWIN TECHNOLOGY LTD

USA . 7,846 parts In-Stock

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7,846

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Problanco Electronics

Mexico . 6,856 parts In-Stock

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6,856

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TANS Electronics

Latvia . 6,231 parts In-Stock

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6,231

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Kulean Microsystems

USA . 4,848 parts In-Stock

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4,848

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UHIMA Technologies

Türkiye . 200 parts In-Stock

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200

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Overview

Unlock a world of high-frequency applications with the NSDP301MX3T5G by Onsemi. As a leader in the industry, Onsemi ensures top-notch quality and reliability in their products, making this PIN diode an ideal choice for attenuator and switching applications. With a wide operating temperature range and superior nickel palladium gold terminal finish, this chip carrier package offers exceptional value and performance. Trust Onsemi to deliver cutting-edge technology that meets your needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material provides durability and protection for the diode, making it suitable for a variety of applications.

Frequency Band: HIGH FREQUENCY

High frequency capability allows for efficient signal processing and transmission, making this diode ideal for applications requiring fast response times.

Surface Mount: YES

Surface mount capability simplifies the assembly process and saves space on the PCB, making this diode a convenient choice for compact electronic designs.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature of 150°C, this diode can withstand elevated temperatures without compromising performance, ensuring reliability in harsh environments.

Minimum Breakdown Voltage: 80 V

The high minimum breakdown voltage of 80 volts provides protection against voltage spikes, enhancing the diode's durability and longevity in high-power applications.

Technical Specifications

PIN Diodes NSDP301MX3T5G attributes and parameters. Explore more PIN Diodes devices from Onsemi

Specs

Application:

ATTENUATOR; SWITCHING

Minimum Breakdown Voltage:

80 V

Config:

SINGLE

Nominal Diode Capacitance:

.33 pF

Diode Element Material:

SILICON

Diode Type:

Frequency Band:

HIGH FREQUENCY

JESD-30 Code:

R-PBCC-N2

JESD-609 Code:

e4

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

260

Reverse Test Voltage:

0 V

Surface Mount:

YES

Technology:

POSITIVE-INTRINSIC-NEGATIVE

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NSDP301MX3T5G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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