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BAP65LXT/R

NXP Semiconductors

BAP65LXT/R by NXP Semiconductors

BAP65LXT/R by NXP Semiconductors is a surface-mount PIN diode with a max reverse voltage of 20V and operates up to 150 °C. It features low forward resistance of 0.95Ω and nominal capacitance of 0.37pF, ideal for RF applications.

Median Price

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Digiode

USA . 3,125 parts In-Stock

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Vyrian

USA . 2,386 parts In-Stock

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Anansix

USA . 1,192 parts In-Stock

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One Stop Electronics

USA . 1,588 parts In-Stock

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$2.010

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Northwest PG Solutions

USA . 731 parts In-Stock

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UNI Independent Distributors

Spain . 4,959 parts In-Stock

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Native Components

USA . 942 parts In-Stock

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Corphita

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Overview

Elevate your projects with the BAP65LXT/R PIN Diode from NXP Semiconductors, renowned for its superior quality and reliability. Ideal for RF switching and attenuation applications, this surface-mount diode ensures optimal performance even at extreme temperatures. With low forward resistance and fast response times, it empowers engineers to create cutting-edge solutions efficiently. Trust in NXP's legacy of innovation to enhance your designs and deliver unmatched value to your customers.

Feature Benefit Bullets

Surface Mount: YES

The surface mount design allows for easy integration into compact circuit boards, making installation and assembly more efficient.

Reverse Test Voltage: 20 V

A reverse test voltage of 20 V provides reliable protection against accidental reverse biasing, enhancing durability in various applications.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature of 150 °C, this diode can perform reliably in demanding environments without overheating.

Maximum Diode Forward Resistance: 0.95 ohm

A low forward resistance of 0.95 ohm minimizes power loss during operation, ensuring efficient performance in RF applications.

Nominal Diode Capacitance: 0.37 pF

With a nominal diode capacitance of 0.37 pF, this device ensures minimal signal distortion and high-speed switching capabilities.

Nominal Minority Carrier Lifetime: 0.18 µs

A minority carrier lifetime of 0.18 µs contributes to faster switching speeds and maintains performance in high-frequency applications.

Minimum Breakdown Voltage: 30 V

A minimum breakdown voltage of 30 V provides robust performance and reliability under high voltage conditions, ensuring safety and longevity.

Diode Resistive Test Frequency: 100 MHz

The ability to operate effectively at a resistive test frequency of 100 MHz makes this diode suitable for a variety of RF and microwave applications.

Diode Resistive Test Current: 5 mA

A resistive test current of 5 mA ensures that the diode can be adequately tested under low current conditions without risking damage.

Diode Type: PIN DIODE

As a PIN diode, this component offers excellent linearity and low distortion, making it ideal for RF switching and attenuation applications.

Technical Specifications

PIN Diodes BAP65LXT/R attributes and parameters. Explore more PIN Diodes devices from NXP Semiconductors

Specs

Minimum Breakdown Voltage:

30 V

Nominal Diode Capacitance:

.37 pF

Maximum Diode Forward Resistance:

.95 ohm

Diode Resistive Test Current:

5 mA

Diode Resistive Test Frequency:

100 MHz

Diode Type:

Nominal Minority Carrier Lifetime:

.18 us

Maximum Operating Temperature:

150 Cel

Reverse Test Voltage:

20 V

Sub-Category:

PIN Diodes

Surface Mount:

YES

Trade Compliance

BAP65LXT/R Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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