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MPN3700RL1

Onsemi

MPN3700RL1 by Onsemi

The Onsemi MPN3700RL1 is a PIN diode with a single configuration for very high frequency applications. It features a max diode capacitance of 1 pF, forward resistance of 1 ohm, and power dissipation of 0.28 W. Ideal for switching operations at temperatures up to 125 °C, this diode has a breakdown voltage of 200 V and utilizes positive-intrinsic-negative technology.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,810 parts In-Stock

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Digiode

USA . 235 parts In-Stock

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Kulean Microsystems

USA . 5,913 parts In-Stock

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SupplyDigital Components

Austria . 4,918 parts In-Stock

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Corphita

USA . 2,110 parts In-Stock

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Problanco Electronics

Mexico . 1,137 parts In-Stock

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Corohmni

South Africa . 404 parts In-Stock

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UHIMA Technologies

Türkiye . 308 parts In-Stock

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TANS Electronics

Latvia . 295 parts In-Stock

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Overview

Experience the cutting-edge technology of Onsemi with the MPN3700RL1 PIN diode. Crafted with precision and expertise, this single configuration diode offers very high-frequency capabilities for a wide range of switching applications. With a maximum operating temperature of 125 °C and a breakdown voltage of 200V, this diode is designed to deliver optimal performance and reliability. Say goodbye to compromises and hello to superior quality and efficiency with the MPN3700RL1 by Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protects the diode from external elements, ensuring a longer lifespan.

Config: SINGLE

Simplified design with one diode, making it easier to install and maintain.

Frequency Band: VERY HIGH FREQUENCY

Suitable for high-frequency applications, ensuring reliable performance in demanding environments.

Maximum Diode Capacitance: 1 pF

Low capacitance allows for fast switching speeds, making it ideal for high-speed applications.

Package Shape: ROUND

Uniform shape for easy integration into various systems.

No. of Terminals: 2

Simplified connectivity with only two terminals, reducing complexity in circuit design.

Package Style (Meter): CYLINDRICAL

Compact design for efficient use of space in electronic systems.

Application: SWITCHING

Specifically designed for high-speed switching applications, ensuring reliable performance in switching circuits.

Maximum Operating Temperature: 125 °C

Can withstand high temperatures, suitable for applications where heat dissipation is a concern.

Terminal Finish: TIN LEAD

Provides a reliable electrical connection and corrosion resistance, ensuring long-term performance.

Terminal Position: BOTTOM

Facilitates easy PCB layout and assembly, improving installation efficiency.

Maximum Diode Forward Resistance: 1 ohm

Low forward resistance minimizes power loss and heat generation, improving overall efficiency.

Maximum Power Dissipation: 0.28 W

Can handle moderate power levels, suitable for various high-frequency applications.

Minimum Breakdown Voltage: 200 V

High breakdown voltage ensures reliability and protection against voltage spikes.

Diode Type: PIN DIODE

PIN diodes are known for their fast switching speed and low capacitance, making them ideal for high-frequency applications.

Technology: POSITIVE-INTRINSIC-NEGATIVE

Advanced technology for improved performance and reliability, ensuring consistent operation in demanding conditions.

Terminal Form: THROUGH-HOLE

Through-hole design for easy installation on PCBs, providing a secure connection.

Diode Element Material: SILICON

Silicon material offers high temperature tolerance and durability, ensuring long-term reliability.

Technical Specifications

PIN Diodes MPN3700RL1 attributes and parameters. Explore more PIN Diodes devices from Onsemi

Specs

Additional Features:

EUROPEAN PART NUMBER

Application:

SWITCHING

Minimum Breakdown Voltage:

200 V

Config:

SINGLE

Maximum Diode Capacitance:

1 pF

Diode Element Material:

SILICON

Maximum Diode Forward Resistance:

1 ohm

Diode Type:

Frequency Band:

VERY HIGH FREQUENCY

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

125 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CYLINDRICAL

Maximum Power Dissipation:

.28 W

Qualification:

Not Qualified

Surface Mount:

NO

Technology:

POSITIVE-INTRINSIC-NEGATIVE

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

MPN3700RL1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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