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MPN3700RLRM

Onsemi

MPN3700RLRM by Onsemi

The Onsemi MPN3700RLRM is a single PIN diode with 1 pF capacitance, suitable for very high frequency applications. It has a max forward resistance of 1 ohm and can handle up to 0.28 W power dissipation. Ideal for switching operations at temperatures up to 125 °C, this diode features a breakdown voltage of 200 V and uses positive-intrinsic-negative technology.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,232 parts In-Stock

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Digiode

USA . 2,043 parts In-Stock

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2,043

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Problanco Electronics

Mexico . 7,874 parts In-Stock

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Kulean Microsystems

USA . 5,725 parts In-Stock

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TANS Electronics

Latvia . 2,645 parts In-Stock

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SupplyDigital Components

Austria . 1,259 parts In-Stock

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UHIMA Technologies

Türkiye . 907 parts In-Stock

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Corphita

USA . 696 parts In-Stock

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Corohmni

South Africa . 375 parts In-Stock

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Overview

Enhance your electronic projects with the MPN3700RLRM PIN Diode from Onsemi. Known for their superior quality and reliability, Onsemi products are trusted by professionals worldwide. Ideal for very high-frequency applications, this PIN diode offers low diode capacitance and a maximum forward resistance of just 1 ohm. Whether you need precise switching capabilities or high-performance circuitry, the MPN3700RLRM is designed to deliver unparalleled value and efficiency. Upgrade your designs today with Onsemi's cutting-edge technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body makes the product lightweight and durable, ideal for applications where weight and durability are important factors.

Frequency Band: VERY HIGH FREQUENCY

With a very high frequency band, this product is suitable for applications requiring high-speed switching and communication capabilities.

Maximum Diode Capacitance: 1 pF

The low diode capacitance of 1 pF ensures fast response times and high-speed performance in switching applications.

Package Shape: ROUND

The round package shape provides uniform stress distribution and ease of mounting, making it a convenient choice for various system designs.

Application: SWITCHING

Designed specifically for switching applications, this PIN diode offers efficient and reliable operation in controlling electronic circuits.

Maximum Operating Temperature: 125 °C

With a maximum operating temperature of 125 °C, this product can withstand high temperatures, ensuring stable performance in challenging environments.

Maximum Diode Forward Resistance: 1 ohm

The low diode forward resistance of 1 ohm minimizes power loss and ensures efficient signal transmission in high-frequency applications.

Technology: POSITIVE-INTRINSIC-NEGATIVE

The use of positive-intrinsic-negative technology enhances the diode's performance and reliability in various electronic applications.

Terminal Form: THROUGH-HOLE

With a through-hole terminal form, this PIN diode offers easy and secure mounting on circuit boards, ensuring a stable connection for efficient signal transmission.

Diode Element Material: SILICON

The use of silicon as the diode element material provides excellent electrical properties, making this PIN diode a reliable choice for high-frequency applications.

Technical Specifications

PIN Diodes MPN3700RLRM attributes and parameters. Explore more PIN Diodes devices from Onsemi

Specs

Application:

SWITCHING

Minimum Breakdown Voltage:

200 V

Config:

SINGLE

Maximum Diode Capacitance:

1 pF

Diode Element Material:

SILICON

Maximum Diode Forward Resistance:

1 ohm

Diode Type:

Frequency Band:

VERY HIGH FREQUENCY

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

125 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CYLINDRICAL

Maximum Power Dissipation:

.28 W

Qualification:

Not Qualified

Surface Mount:

NO

Technology:

POSITIVE-INTRINSIC-NEGATIVE

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

MPN3700RLRM Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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