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UM9415B

Microchip Technology

UM9415B by Microchip Technology

UM9415B by Microchip Tech is a single PIN diode for high to ultra-high frequency applications. With 4 pF diode capacitance, 1 ohm forward resistance, and 2.5 W power dissipation, it's ideal for switching purposes in circuits requiring fast response times. The diode operates at a min breakdown voltage of 50 V with positive-intrinsic-negative technology.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Vyrian

USA . 5,233 parts In-Stock

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Bristol Electronics

USA . 500 parts In-Stock

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Nova Conductors

Japan . 75 parts In-Stock

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75

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Ampacity Inc.

Singapore . 541 parts In-Stock

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$0.010

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541

$0.010

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Corohmni

South Africa . 99 parts In-Stock

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$0.112

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Aztec Data Supply Inc.

USA . 495 parts In-Stock

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$0.125

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495

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AZTECH Wire

Italy . 368 parts In-Stock

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$7.766

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QUARKTWIN TECHNOLOGY LTD

USA . 15,976 parts In-Stock

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RGB Technical Solutions

Ukraine . 7,498 parts In-Stock

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Continental Prestige Electronics

USA . 5,638 parts In-Stock

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Argo Parts USA

USA . 4,258 parts In-Stock

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Kepictronics

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Bastille Electronics

Australia . 120 parts In-Stock

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Overview

Experience the unmatched quality and performance of the UM9415B PIN Diode by Microchip Technology. With a reputation for excellence, Microchip Technology ensures that this high-frequency to ultra-high frequency diode meets the highest standards in the industry. Perfect for switching applications, this diode offers low forward resistance and high power dissipation capabilities, making it a reliable choice for your projects. Trust in Microchip Technology to deliver cutting-edge technology with the UM9415B PIN Diode.

Feature Benefit Bullets

Config: SINGLE

Single configuration allows for easy integration into various circuit layouts.

Frequency Band: HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

Suitable for high frequency to ultra high frequency applications, providing versatile use cases.

Maximum Diode Capacitance: 4 pF

Low diode capacitance helps in high-speed switching applications and reduces signal distortion.

Package Shape: ROUND

Round shape provides uniformity and stability in mounting the diode in different devices.

Reverse Test Voltage: 0 V

Zero reverse test voltage allows for easy testing and integration in circuits.

No. of Terminals: 2

Simple two-terminal design for straightforward connection and implementation.

Package Style (Meter): LONG FORM

Long form factor enables easy installation and compatibility in various systems.

Application: SWITCHING

Specifically designed for switching applications, ensuring efficient performance.

Terminal Finish: TIN LEAD

Tin lead finish provides good electrical conductivity and solderability for reliable connections.

Terminal Position: AXIAL

Axial positioning offers stability in assembly and enhances signal transmission.

Maximum Diode Forward Resistance: 1 ohm

Low forward resistance ensures minimal power loss and efficient signal transmission.

Case Connection: ISOLATED

Isolated case connection improves circuit safety and reduces interference.

Maximum Power Dissipation: 2.5 W

High power dissipation capability allows for handling of increased power levels.

Nominal Diode Capacitance: 4 pF

Consistent nominal capacitance ensures reliable performance in various conditions.

Nominal Minority Carrier Lifetime: 5 us

Long minority carrier lifetime enhances diode efficiency and switching speed.

Minimum Breakdown Voltage: 50 V

High breakdown voltage provides protection against voltage spikes and surges.

Diode Resistive Test Frequency: 100 MHz

Suitable for testing at high frequencies, ensuring accurate assessment of diode performance.

Diode Resistive Test Current: 50 mA

Moderate test current for reliable evaluation of diode characteristics without causing damage.

Diode Type: PIN DIODE

PIN diode type offers fast switching speeds and high power handling capabilities.

Technology: POSITIVE-INTRINSIC-NEGATIVE

Utilizes positive-intrinsic-negative technology for improved performance and efficiency.

Terminal Form: WIRE

Wire terminal form simplifies connection and enhances durability in various applications.

Diode Element Material: SILICON

Silicon material provides durability, stability, and reliability in diverse operating conditions.

Technical Specifications

PIN Diodes UM9415B attributes and parameters. Explore more PIN Diodes devices from Microchip Technology

Specs

Additional Features:

LOW DISTORTION

Application:

SWITCHING

Minimum Breakdown Voltage:

50 V

Case Connection:

ISOLATED

Config:

SINGLE

Maximum Diode Capacitance:

4 pF

Nominal Diode Capacitance:

4 pF

Diode Element Material:

SILICON

Maximum Diode Forward Resistance:

1 ohm

Diode Resistive Test Current:

50 mA

Diode Resistive Test Frequency:

100 MHz

Diode Type:

Frequency Band:

HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

JESD-30 Code:

O-XALF-W2

JESD-609 Code:

e0

Nominal Minority Carrier Lifetime:

5 us

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

UNSPECIFIED

Package Shape:

Package Style (Meter):

LONG FORM

Maximum Power Dissipation:

2.5 W

Qualification:

Not Qualified

Reverse Test Voltage:

0 V

Sub-Category:

PIN Diodes

Surface Mount:

NO

Technology:

POSITIVE-INTRINSIC-NEGATIVE

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

UM9415B Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.60

SB

8541.10.00.60

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

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