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1SV267-TB-E

Onsemi

1SV267-TB-E by Onsemi

1SV267-TB-E by Onsemi is a PIN diode with TIN BISMUTH finish. It can withstand 30s at 260 °C peak reflow temperature. Featuring POSITIVE-INTRINSIC-NEGATIVE tech, it's ideal for RF switches and attenuators in communication systems.

Median Price

$0.142

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Element14

Singapore . 1,934 parts In-Stock

1+ parts

$0.553

100+ parts

$0.377

1k+ parts

$0.212

10k+ parts

-

1,934

$0.553

$0.377

$0.212

-

DigiKey

USA . 5,721 parts In-Stock

1+ parts

$0.610

100+ parts

$0.240

1k+ parts

$0.162

10k+ parts

-

5,721

$0.610

$0.240

$0.162

-

Rochester

USA . 49,500 parts In-Stock

1+ parts

-

100+ parts

$0.142

1k+ parts

$0.118

10k+ parts

$0.105

49,500

-

$0.142

$0.118

$0.105

Verical

USA . 42,000 parts In-Stock

1+ parts

-

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$0.132

42,000

-

-

-

$0.132

Farnell

UK . 1,934 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.079

10k+ parts

-

1,934

-

-

$0.079

-

Distributors (In-Stock)

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Digiode

USA . 866 parts In-Stock

1+ parts

$0.111

100+ parts

-

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866

$0.111

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-

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Vyrian

USA . 1,532 parts In-Stock

1+ parts

$0.117

100+ parts

-

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1,532

$0.117

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-

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Flip Electronics

USA . 225,000 parts In-Stock

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225,000

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Continental Prestige Electronics

USA . 1,934 parts In-Stock

1+ parts

$0.083

100+ parts

-

1k+ parts

-

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1,934

$0.083

-

-

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Corphita

USA . 567 parts In-Stock

1+ parts

$0.105

100+ parts

-

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567

$0.105

-

-

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Corohmni

South Africa . 402 parts In-Stock

1+ parts

$0.117

100+ parts

-

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402

$0.117

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Authorized Procurement Solutions

USA . 25,000 parts In-Stock

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25,000

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Kulean Microsystems

USA . 6,171 parts In-Stock

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6,171

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SupplyDigital Components

Austria . 4,694 parts In-Stock

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4,694

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Metaverse IC Inc.

Canada . 3,400 parts In-Stock

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3,400

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Perfect Parts

USA . 3,304 parts In-Stock

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3,304

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Problanco Electronics

Mexico . 2,163 parts In-Stock

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2,163

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Assy Fe

Spain . 1,000 parts In-Stock

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1,000

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UHIMA Technologies

Türkiye . 808 parts In-Stock

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808

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RC Electronics

USA . 700 parts In-Stock

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700

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Native Components

USA . 616 parts In-Stock

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616

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Northwest PG Solutions

USA . 612 parts In-Stock

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612

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TANS Electronics

Latvia . 244 parts In-Stock

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244

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Overview

When it comes to high-quality PIN diodes, Onsemi's 1SV267-TB-E stands out from the rest. With a reputation for excellence in manufacturing, Onsemi delivers top-notch performance and reliability. This versatile diode is perfect for a wide range of applications, offering customers unbeatable value and benefits. Whether you're looking to improve signal switching or RF control, the 1SV267-TB-E is the perfect choice. Trust Onsemi for all your diode needs.

Feature Benefit Bullets

Terminal Finish: TIN BISMUTH

The TIN BISMUTH terminal finish provides good solderability and reliability, ensuring secure connections and long-lasting performance.

Maximum Time At Peak Reflow Temperature (s): 30

With a maximum reflow time of 30 seconds, this product can withstand reflow processes without any damage, making it suitable for manufacturing applications.

Peak Reflow Temperature °C: 260

The high peak reflow temperature of 260 °C allows for proper solder reflow, ensuring the diodes are securely attached to the circuit board for optimal functionality.

Diode Type: PIN DIODE

PIN diodes are known for their fast switching speeds and low distortion, making them ideal for high-frequency applications such as RF switches and attenuators.

Technology: POSITIVE-INTRINSIC-NEGATIVE

The positive-intrinsic-negative technology used in these diodes offers low loss and high linearity, making them suitable for applications where signal integrity is crucial.

Diode Element Material: SILICON

Silicon diodes have excellent thermal stability and high voltage ratings, ensuring reliable performance in a wide range of operating conditions.

Technical Specifications

PIN Diodes 1SV267-TB-E attributes and parameters. Explore more PIN Diodes devices from Onsemi

Specs

Diode Element Material:

SILICON

Diode Type:

JESD-609 Code:

e6

Moisture Sensitivity Level (MSL):

1

Peak Reflow Temperature (C):

260

Technology:

POSITIVE-INTRINSIC-NEGATIVE

Terminal Finish:

TIN BISMUTH

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

1SV267-TB-E Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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