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BAP50-05,215

NXP Semiconductors

BAP50-05,215 by NXP Semiconductors

The NXP Semiconductors BAP50-05,215 is a PIN diode with common cathode, 2 elements. It has a max diode capacitance of 0.6 pF and operates b/w -65 to 150 °C. Ideal for applications requiring high-frequency switching such as RF switches and attenuators due to its low forward resistance and breakdown voltage of 50 V.

Median Price

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Lifecycle Status

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5

In-Stock Inventory

1k+

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Vyrian

USA . 2,008 parts In-Stock

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Anansix

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Digiode

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VNN

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Nova Conductors

Japan . 200 parts In-Stock

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200

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Aztec Data Supply Inc.

USA . 77 parts In-Stock

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$0.090

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Corohmni

South Africa . 242 parts In-Stock

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Advanced Electronics

New Zealand . 500 parts In-Stock

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One Stop Electronics

USA . 990 parts In-Stock

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$1.010

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Semicontronic

India . 732 parts In-Stock

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$0.985

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$1.010

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Ampacity Inc.

Singapore . 213 parts In-Stock

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$3.010

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AZTECH Wire

Italy . 386 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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UNI Independent Distributors

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Microchip USA

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Corphita

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Authorized Procurement Solutions

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Argo Parts USA

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Bastille Electronics

Australia . 750 parts In-Stock

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Continental Prestige Electronics

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Overview

Discover the innovative BAP50-05,215 PIN Diodes by NXP Semiconductors, designed for high-quality performance in a variety of applications. With a common cathode configuration and two elements, this small outline package offers customers the perfect balance of reliability and efficiency. From its durable plastic/epoxy body to its wide operating temperature range, this PIN diode delivers unmatched value and benefits. Trust NXP Semiconductors to provide you with cutting-edge technology that meets your needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and protection for the diodes, ensuring reliability and durability.

Config: COMMON CATHODE, 2 ELEMENTS

Common cathode configuration with 2 elements allows for easy integration into circuits and applications, offering flexibility in design.

Maximum Diode Capacitance: 0.6 pF

Low diode capacitance helps in high frequency applications, making this product suitable for fast switching and RF applications.

Surface Mount: YES

Surface mount capability makes it easy to mount on PCBs, saving space and simplifying assembly processes.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this product can withstand a wide range of environmental conditions.

Minimum Operating Temperature: -65 °C

The low minimum operating temperature allows this product to be used in cold environments without any issues.

Maximum Power Dissipation: 0.25 W

With a high power dissipation capacity, this product can handle high power levels efficiently.

Technology: POSITIVE-INTRINSIC-NEGATIVE

The PIN diode technology offers fast response times and low distortion, making it ideal for RF switches and attenuators.

Technical Specifications

PIN Diodes BAP50-05,215 attributes and parameters. Explore more PIN Diodes devices from NXP Semiconductors

Specs

Minimum Breakdown Voltage:

50 V

Config:

COMMON CATHODE, 2 ELEMENTS

Maximum Diode Capacitance:

.6 pF

Nominal Diode Capacitance:

.6 pF

Diode Element Material:

SILICON

Maximum Diode Forward Resistance:

40 ohm

Diode Resistive Test Current:

.5 mA

Diode Resistive Test Frequency:

100 MHz

Diode Type:

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

.25 W

Qualification:

Not Qualified

Reverse Test Voltage:

1 V

Sub-Category:

PIN Diodes

Surface Mount:

YES

Technology:

POSITIVE-INTRINSIC-NEGATIVE

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

BAP50-05,215 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00

SB

8541.10.00.80

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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