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BAP51-03,115

NXP Semiconductors

BAP51-03,115 by NXP Semiconductors

The NXP Semiconductors BAP51-03,115 is a PIN diode with a max forward resistance of 2.5 ohm and capacitance of 0.55 pF. It operates b/w -65 to 150 °C and has a breakdown voltage of 60 V. Ideal for RF switches, attenuators, and phase shifters in communication systems due to its high-speed switching capabilities.

Median Price

$0.102

Lifecycle Status

Suppliers In-Stock

14

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 48,000 parts In-Stock

1+ parts

$0.070

100+ parts

$0.070

1k+ parts

$0.070

10k+ parts

-

48,000

$0.070

$0.070

$0.070

-

DigiKey

USA . 6,833 parts In-Stock

1+ parts

$0.280

100+ parts

$0.144

1k+ parts

$0.121

10k+ parts

$0.108

6,833

$0.280

$0.144

$0.121

$0.108

Newark

USA . 1,243 parts In-Stock

1+ parts

$0.420

100+ parts

$0.134

1k+ parts

$0.103

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-

1,243

$0.420

$0.134

$0.103

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Flip Electronics (Authorized)

USA . 54,000 parts In-Stock

1+ parts

-

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54,000

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Arrow

USA . 3,000 parts In-Stock

1+ parts

-

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$0.080

3,000

-

-

-

$0.080

Verical

USA . 2,960 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.124

10k+ parts

$0.117

2,960

-

-

$0.124

$0.117

Chip1Stop

Japan . 270 parts In-Stock

1+ parts

-

100+ parts

$0.050

1k+ parts

-

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270

-

$0.050

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Distributors (In-Stock)

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Vyrian

USA . 1,011 parts In-Stock

1+ parts

$0.080

100+ parts

-

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1,011

$0.080

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Digiode

USA . 4,100 parts In-Stock

1+ parts

$0.102

100+ parts

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4,100

$0.102

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Flip Electronics

USA . 54,000 parts In-Stock

1+ parts

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54,000

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LIBRA Elektronik GmbH

Germany . 4,320 parts In-Stock

1+ parts

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4,320

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Anansix

USA . 1,884 parts In-Stock

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1,884

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Nova Conductors

Japan . 500 parts In-Stock

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500

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VNN

France . 202 parts In-Stock

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202

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Distributors (Availability)

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Corohmni

South Africa . 192 parts In-Stock

1+ parts

$0.010

100+ parts

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192

$0.010

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Corphita

USA . 1,381 parts In-Stock

1+ parts

$0.096

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1,381

$0.096

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Ampacity Inc.

Singapore . 12,796 parts In-Stock

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$0.148

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12,796

$0.148

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Modulus Dynamics

Lithuania . 30,223 parts In-Stock

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$0.166

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$0.166

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$0.166

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30,223

$0.166

$0.166

$0.166

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Perfect Parts

USA . 69,786 parts In-Stock

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69,786

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Formix International (Excess)

India . 5,757 parts In-Stock

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5,757

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Continental Prestige Electronics

USA . 4,004 parts In-Stock

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4,004

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UNI Independent Distributors

Spain . 3,329 parts In-Stock

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3,329

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Argo Parts USA

USA . 3,032 parts In-Stock

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3,032

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Authorized Procurement Solutions

USA . 2,500 parts In-Stock

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2,500

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Glotronic Ltd.

UK . 2,400 parts In-Stock

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2,400

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Aranea Global

USA . 1,000 parts In-Stock

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1,000

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Overview

Experience the reliability and performance of the BAP51-03,115 PIN Diode by NXP Semiconductors. This innovative product offers unmatched quality and versatility, making it ideal for a wide range of applications. Whether you're looking to enhance your electronic devices or improve signal processing, this diode delivers exceptional value and benefits. Trust NXP Semiconductors for cutting-edge technology that exceeds expectations. Elevate your projects with the BAP51-03,115 and unlock endless possibilities.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and protection for the diode, ensuring long-lasting performance.

Surface Mount: YES

Surface mount capability offers easy installation and compatibility with modern electronics manufacturing processes.

Maximum Diode Capacitance: 0.55 pF

Low diode capacitance ensures fast response times and high-frequency operation, making it ideal for RF applications.

Maximum Operating Temperature: 150 °C

High operating temperature range allows the diode to withstand elevated temperatures without compromising performance.

Reverse Test Voltage: 1 V

Low reverse test voltage helps protect the diode from damage during reverse bias conditions.

Maximum Power Dissipation: 0.5 W

High power dissipation capability allows the diode to handle power surges and maintain stable operation.

Technology: POSITIVE-INTRINSIC-NEGATIVE

Positive-intrinsic-negative technology provides excellent RF performance and low noise characteristics for high-frequency applications.

Technical Specifications

PIN Diodes BAP51-03,115 attributes and parameters. Explore more PIN Diodes devices from NXP Semiconductors

Specs

Minimum Breakdown Voltage:

60 V

Config:

SINGLE

Maximum Diode Capacitance:

.55 pF

Nominal Diode Capacitance:

.55 pF

Diode Element Material:

SILICON

Maximum Diode Forward Resistance:

2.5 ohm

Diode Resistive Test Current:

.5 mA

Diode Resistive Test Frequency:

100 MHz

Diode Type:

JESD-30 Code:

R-PDSO-G2

JESD-609 Code:

e3

Nominal Minority Carrier Lifetime:

.55 us

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

.5 W

Qualification:

Not Qualified

Reverse Test Voltage:

1 V

Sub-Category:

PIN Diodes

Surface Mount:

YES

Technology:

POSITIVE-INTRINSIC-NEGATIVE

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

BAP51-03,115 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00

SB

8541.10.00.80

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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