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BAP50-03,135

NXP Semiconductors

BAP50-03,135 by NXP Semiconductors

NXP Semiconductors' BAP50-03,135 is a PIN diode with 50V breakdown voltage and 40 ohm forward resistance. Ideal for RF applications, it operates up to 150°C, has 0.55 pF capacitance, and can withstand peak reflow at 260°C for 30s.

Median Price

$0.035

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

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Rochester

USA . 8,830 parts In-Stock

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Verical

USA . 124,319 parts In-Stock

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Digiode

USA . 2,681 parts In-Stock

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Nova Conductors

Japan . 100 parts In-Stock

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Vyrian

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Anansix

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VNN

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Corphita

USA . 3,857 parts In-Stock

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Netroflash

USA . 2,000 parts In-Stock

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Argo Parts USA

USA . 643 parts In-Stock

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Continental Prestige Electronics

USA . 64 parts In-Stock

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Corohmni

South Africa . 176 parts In-Stock

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AZTECH Wire

Italy . 163 parts In-Stock

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Perfect Parts

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Lixinc

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UNI Independent Distributors

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Microchip USA

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Overview

Unlock the power of innovation with the BAP50-03,135 by NXP Semiconductors. This PIN Diode exemplifies the superior quality and expertise of its manufacturer, providing unmatched performance and reliability in a variety of applications. From telecommunications to radar systems, this surface mount diode offers exceptional value, benefits, and advantages to customers seeking cutting-edge technology. Trust in NXP Semiconductors to deliver excellence with the BAP50-03,135.

Feature Benefit Bullets

Surface Mount: YES

Surface mount capability allows for easier and more efficient installation on PCBs, saving space and reducing assembly time.

Reverse Test Voltage: 1 V

Provides low reverse test voltage, making it suitable for applications where low voltage operation is required.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature of 150°C, this product is ideal for use in environments that require high temperature tolerance.

Terminal Finish: TIN

Tin terminal finish provides good solderability and corrosion resistance, ensuring reliable connectivity and longevity.

Maximum Diode Forward Resistance: 40 ohm

Low maximum diode forward resistance ensures minimal signal loss and efficient performance.

Nominal Diode Capacitance: 0.55 pF

Low diode capacitance helps in maintaining high frequency response and fast switching times.

Minimum Breakdown Voltage: 50 V

With a minimum breakdown voltage of 50V, this product offers protection against voltage spikes and surges.

Maximum Time At Peak Reflow Temperature (s): 30

Allows for precise and controlled reflow soldering process, ensuring reliable and consistent solder joints.

Peak Reflow Temperature °C: 260

Capable of withstanding high peak reflow temperatures, making it suitable for lead-free soldering processes.

Diode Resistive Test Frequency: 100 MHz

High resistive test frequency allows for accurate testing and characterization of the diode's performance at high frequencies.

Diode Resistive Test Current: 0.5 mA

Low resistive test current ensures minimal power consumption during testing, reducing energy usage.

Diode Type: PIN DIODE

PIN diodes are known for their fast switching speed, low distortion, and high linearity, making them ideal for various RF and microwave applications.

Technical Specifications

PIN Diodes BAP50-03,135 attributes and parameters. Explore more PIN Diodes devices from NXP Semiconductors

Specs

Minimum Breakdown Voltage:

50 V

Nominal Diode Capacitance:

.55 pF

Maximum Diode Forward Resistance:

40 ohm

Diode Resistive Test Current:

.5 mA

Diode Resistive Test Frequency:

100 MHz

Diode Type:

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Operating Temperature:

150 Cel

Peak Reflow Temperature (C):

260

Reverse Test Voltage:

1 V

Sub-Category:

PIN Diodes

Surface Mount:

YES

Terminal Finish:

TIN

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

BAP50-03,135 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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