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BAP50-03,115

NXP Semiconductors

BAP50-03,115 by NXP Semiconductors

The NXP Semiconductors BAP50-03,115 is a PIN diode with a max forward resistance of 5 ohm and diode capacitance of 0.55 pF. It operates b/w -65 to 150 °C and has a breakdown voltage of 50 V. Ideal for RF switches, attenuators, and phase shifters in communication systems.

Median Price

$0.084

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

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RS (Exports)

UK . 100 parts In-Stock

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$0.084

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$0.072

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Nova Conductors

Japan . 62 parts In-Stock

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$0.033

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ACDS - Activité Composants Distribution Service

France . 24,000 parts In-Stock

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Vyrian

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ComSIT Distribution GmbH

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R&J Components

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Digiode

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LIBRA Elektronik GmbH

Germany . 2,966 parts In-Stock

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Anansix

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Aranea Global

USA . 1,000 parts In-Stock

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$0.032

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Continental Prestige Electronics

USA . 4,770 parts In-Stock

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Argo Parts USA

USA . 3,661 parts In-Stock

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Ampacity Inc.

Singapore . 100 parts In-Stock

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$0.071

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Semicontronic

India . 100 parts In-Stock

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Aztec Data Supply Inc.

USA . 3,892 parts In-Stock

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Corohmni

South Africa . 86 parts In-Stock

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AZTECH Wire

Italy . 514 parts In-Stock

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Perfect Parts

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Cyclops Electronics Ltd (Excess)

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QUARKTWIN TECHNOLOGY LTD

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A-Z Elektronik GmbH

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Microchip USA

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Overview

Looking for top-notch PIN diodes for your electronic projects? Look no further than the BAP50-03,115 by NXP Semiconductors. With high-quality materials and a compact design, this single-configured diode offers superior performance across a wide range of applications. From signal routing to RF switching, this diode delivers reliable functionality at any operating temperature. Trust NXP Semiconductors for cutting-edge technology that meets your needs. Elevate your projects with the BAP50-03,115 today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the PIN diodes, ensuring a longer lifespan and reliable performance.

Surface Mount: YES

Allows for easy installation on circuit boards, saving time and effort during assembly.

Maximum Diode Capacitance: 0.55 pF

Low capacitance allows for fast switching speeds and minimal signal distortion, making it suitable for high-frequency applications.

Minimum Breakdown Voltage: 50 V

With a high breakdown voltage, these diodes can handle higher voltages without failing, increasing reliability in demanding circuits.

Maximum Power Dissipation: 0.5 W

The ability to dissipate up to 0.5 watts of power ensures stable operation and prevents overheating in intense operating conditions.

Diode Type: PIN DIODE

The PIN diode technology offers low distortion, high linearity, and fast response time, making it ideal for applications in RF switching and attenuation.

Technical Specifications

PIN Diodes BAP50-03,115 attributes and parameters. Explore more PIN Diodes devices from NXP Semiconductors

Specs

Minimum Breakdown Voltage:

50 V

Config:

SINGLE

Maximum Diode Capacitance:

.55 pF

Nominal Diode Capacitance:

.55 pF

Diode Element Material:

SILICON

Maximum Diode Forward Resistance:

5 ohm

Diode Resistive Test Current:

.5 mA

Diode Resistive Test Frequency:

100 MHz

Diode Type:

JESD-30 Code:

R-PDSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

.5 W

Qualification:

Not Qualified

Reverse Test Voltage:

1 V

Sub-Category:

PIN Diodes

Surface Mount:

YES

Technology:

POSITIVE-INTRINSIC-NEGATIVE

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

BAP50-03,115 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00

SB

8541.10.00.80

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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