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BAP51-02,115

NXP Semiconductors

BAP51-02,115 by NXP Semiconductors

The NXP Semiconductors BAP51-02,115 is a PIN diode with a max diode capacitance of 0.55 pF and a forward resistance of 2.5 ohm. It operates b/w -65 to 150 °C and has a breakdown voltage of 60 V, making it suitable for RF switches, attenuators, and phase shifters in various applications.

Median Price

$0.124

Lifecycle Status

Suppliers In-Stock

16

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 27,463 parts In-Stock

1+ parts

$0.240

100+ parts

$0.125

1k+ parts

$0.104

10k+ parts

$0.093

27,463

$0.240

$0.125

$0.104

$0.093

Mouser Electronics

USA . 3,040 parts In-Stock

1+ parts

$0.380

100+ parts

$0.212

1k+ parts

$0.122

10k+ parts

$0.096

3,040

$0.380

$0.212

$0.122

$0.096

Flip Electronics (Authorized)

USA . 80,000 parts In-Stock

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Arrow

USA . 18,000 parts In-Stock

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Chip1Stop

Japan . 1,940 parts In-Stock

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$0.110

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$0.082

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$0.110

$0.082

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Verical

USA . 1,940 parts In-Stock

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$0.124

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$0.124

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Rochester

USA . 48 parts In-Stock

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$0.112

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$0.093

10k+ parts

$0.083

48

-

$0.112

$0.093

$0.083

Distributors (In-Stock)

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Digiode

USA . 4,672 parts In-Stock

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$0.086

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$0.086

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Ozdisan Elektronik

Türkiye . 2,888 parts In-Stock

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$0.090

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Nova Conductors

Japan . 600 parts In-Stock

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$0.110

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600

$0.110

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TME

Poland . 7,545 parts In-Stock

1+ parts

$0.380

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$0.160

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$0.106

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7,545

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Chip Stock

USA . 179,000 parts In-Stock

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Flip Electronics

USA . 80,000 parts In-Stock

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Vyrian

USA . 22,233 parts In-Stock

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VNN

France . 1,834 parts In-Stock

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Anansix

USA . 1,091 parts In-Stock

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Distributors (Availability)

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Corphita

USA . 4,446 parts In-Stock

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$0.082

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Argo Parts USA

USA . 1,463 parts In-Stock

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$0.110

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$0.107

1,463

$0.110

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$0.107

Continental Prestige Electronics

USA . 167 parts In-Stock

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$0.110

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167

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Perfect Parts

USA . 328,390 parts In-Stock

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Lixinc

USA . 12,206 parts In-Stock

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UNI Independent Distributors

Spain . 7,280 parts In-Stock

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S.R.D Solutions

India . 3,000 parts In-Stock

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Authorized Procurement Solutions

USA . 942 parts In-Stock

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GreenTree Electronics

Israel . 145 parts In-Stock

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Netroflash

USA . 50 parts In-Stock

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$0.108

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$0.104

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$0.102

50

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$0.108

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$0.102

Overview

Unlock the power of cutting-edge technology with NXP Semiconductors' BAP51-02,115 PIN diode. Designed for high performance and reliability, this small outline package offers a wide range of applications, from RF switches to attenuators. With a low forward resistance of 2.5 ohm and a maximum power dissipation of 0.715 W, this diode provides exceptional value and efficiency. Trust in NXP Semiconductors to deliver superior quality and innovation in every product. Elevate your projects with the BAP51-02,115 and experience the difference today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material helps in reducing the overall weight of the product and provides good durability.

Surface Mount: YES

Surface mount capability makes the product suitable for automated assembly processes, saving time and effort.

Maximum Diode Capacitance: 0.55 pF

Low diode capacitance allows for fast switching speeds and high-frequency operation.

Maximum Operating Temperature: 150 °C

Wide operating temperature range makes the product suitable for various environmental conditions.

Maximum Power Dissipation: 0.715 W

High power dissipation capability ensures reliable performance under heavy load conditions.

Technology: POSITIVE-INTRINSIC-NEGATIVE

Positive-intrinsic-negative technology offers high performance and low noise characteristics.

Diode Element Material: SILICON

Silicon as the diode element material provides good thermal stability and high reliability.

Technical Specifications

PIN Diodes BAP51-02,115 attributes and parameters. Explore more PIN Diodes devices from NXP Semiconductors

Specs

Minimum Breakdown Voltage:

60 V

Config:

SINGLE

Maximum Diode Capacitance:

.55 pF

Nominal Diode Capacitance:

.4 pF

Diode Element Material:

SILICON

Maximum Diode Forward Resistance:

2.5 ohm

Diode Resistive Test Current:

.5 mA

Diode Resistive Test Frequency:

100 MHz

Diode Type:

JESD-30 Code:

R-PDSO-F2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

.715 W

Qualification:

Not Qualified

Reverse Test Voltage:

0 V

Sub-Category:

PIN Diodes

Surface Mount:

YES

Technology:

POSITIVE-INTRINSIC-NEGATIVE

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

BAP51-02,115 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00

SB

8541.10.00.80

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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