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BAP70AM

NXP Semiconductors

BAP70AM by NXP Semiconductors

PIN DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 6; Surface Mount: YES; Package Shape: RECTANGULAR;

Median Price

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Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Infinite Electronics LLP

India . 28,300 parts In-Stock

1+ parts

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28,300

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ComSIT Distribution GmbH

Germany . 20,000 parts In-Stock

1+ parts

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20,000

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Atlantic Semiconductor

USA . 20,000 parts In-Stock

1+ parts

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20,000

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Bristol Electronics

USA . 10,000 parts In-Stock

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10,000

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Vyrian

USA . 4,074 parts In-Stock

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4,074

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EMSNET

USA . 2,900 parts In-Stock

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2,900

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Anansix

USA . 2,106 parts In-Stock

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2,106

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Digiode

USA . 1,407 parts In-Stock

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1,407

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

One Stop Electronics

USA . 1,308 parts In-Stock

1+ parts

$1.010

100+ parts

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1,308

$1.010

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Kepictronics

USA . 30,000 parts In-Stock

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30,000

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A-Z Elektronik GmbH

Germany . 9,670 parts In-Stock

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9,670

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Authorized Procurement Solutions

USA . 6,000 parts In-Stock

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6,000

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Glotronic Ltd.

UK . 3,700 parts In-Stock

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3,700

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UNI Independent Distributors

Spain . 2,281 parts In-Stock

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2,281

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Corphita

USA . 2,260 parts In-Stock

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2,260

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Alle Elektronik GmbH

Germany . 1,976 parts In-Stock

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1,976

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Northwest PG Solutions

USA . 1,804 parts In-Stock

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$3.379

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1,804

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$3.379

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Assy Fe

Spain . 1,000 parts In-Stock

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1,000

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Native Components

USA . 823 parts In-Stock

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$3.345

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823

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$3.345

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Perfect Parts

USA . 280 parts In-Stock

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280

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Technical Specifications

PIN Diodes BAP70AM attributes and parameters. Explore more PIN Diodes devices from NXP Semiconductors

Specs

Additional Features:

LOW DISTORTION

Application:

ATTENUATOR

Config:

2 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

Maximum Diode Capacitance:

.25 pF

Diode Element Material:

SILICON

Maximum Diode Forward Resistance:

1.9 ohm

Diode Type:

Maximum Forward Voltage (VF):

1.1 V

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Nominal Minority Carrier Lifetime:

1.25 us

No. of Elements:

4

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

.3 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

50 V

Maximum Reverse Current:

.1 uA

Reverse Test Voltage:

50 V

Sub-Category:

Other Diodes

Surface Mount:

YES

Technology:

POSITIVE-INTRINSIC-NEGATIVE

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

BAP70AM Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00

SB

8541.10.00.80

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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