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BAP70-02T/R

NXP Semiconductors

BAP70-02T/R by NXP Semiconductors

BAP70-02T/R by NXP Semiconductors is a surface mount PIN diode ideal for RF applications. It features a max operating temp of 150 °C, reverse test voltage of 0V, and nominal capacitance of 0.57 pF, making it suitable for high-frequency circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Vyrian

USA . 3,261 parts In-Stock

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Digiode

USA . 2,879 parts In-Stock

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Anansix

USA . 345 parts In-Stock

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345

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One Stop Electronics

USA . 662 parts In-Stock

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$3.010

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662

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Northwest PG Solutions

USA . 2,243 parts In-Stock

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$3.300

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UNI Independent Distributors

Spain . 5,797 parts In-Stock

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Corphita

USA . 3,745 parts In-Stock

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Native Components

USA . 797 parts In-Stock

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$2.910

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797

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Overview

Elevate your design with the BAP70-02T/R from NXP Semiconductors, a leading name in innovation and quality. This high-performance PIN diode is perfect for a range of applications, delivering unmatched reliability and efficiency. With its surface mount capability and robust thermal performance, it ensures optimal functionality in demanding environments. Trust NXP to power your projects with advanced technology that enhances performance and drives success!

Feature Benefit Bullets

Surface Mount: YES

The surface mount design allows for easy integration into compact electronic circuits, facilitating automated assembly and improving performance.

Reverse Test Voltage: 0 V

A reverse test voltage of 0 V indicates that the diode is designed for specific applications where reverse bias conditions are not critical, enhancing reliability.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this diode can operate in high-temperature environments, making it suitable for demanding applications.

Maximum Diode Forward Resistance: 100 ohm

The maximum forward resistance of 100 ohms ensures minimal voltage drop and power loss in forward bias, improving overall circuit efficiency.

Nominal Diode Capacitance: 0.57 pF

With a low nominal capacitance of 0.57 pF, this diode minimizes signal distortion in high-frequency applications, making it ideal for RF and microwave circuits.

Nominal Minority Carrier Lifetime: 1.25 us

A minority carrier lifetime of 1.25 microseconds indicates effective charge carrier management, resulting in enhanced switching speed and performance.

Minimum Breakdown Voltage: 50 V

A minimum breakdown voltage of 50 V provides robust protection against voltage spikes, contributing to a longer lifespan and reliability in circuit applications.

Diode Resistive Test Frequency: 100 MHz

Testing at a frequency of 100 MHz ensures this PIN diode can operate effectively in high-frequency applications, making it suitable for communications and signal processing.

Diode Resistive Test Current: 0.5 mA

A resistive test current of 0.5 mA demonstrates the diode's ability to operate efficiently with low power consumption, making it energy-efficient in various applications.

Diode Type: PIN DIODE

As a PIN diode, it offers excellent linearity and fast switching capabilities, making it ideal for RF switching and attenuator applications.

Technical Specifications

PIN Diodes BAP70-02T/R attributes and parameters. Explore more PIN Diodes devices from NXP Semiconductors

Specs

Minimum Breakdown Voltage:

50 V

Nominal Diode Capacitance:

.57 pF

Maximum Diode Forward Resistance:

100 ohm

Diode Resistive Test Current:

.5 mA

Diode Resistive Test Frequency:

100 MHz

Diode Type:

Nominal Minority Carrier Lifetime:

1.25 us

Maximum Operating Temperature:

150 Cel

Reverse Test Voltage:

0 V

Sub-Category:

PIN Diodes

Surface Mount:

YES

Trade Compliance

BAP70-02T/R Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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