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BAP70Q

NXP Semiconductors

BAP70Q by NXP Semiconductors

BAP70Q by NXP Semiconductors is a complex PIN diode designed for S-band applications, featuring a max diode capacitance of 3 pF and forward resistance of 1.9 ohm. It comes in a small outline package with 5 terminals. Ideal for use as an attenuator, it ensures efficient signal management.

Median Price

$0.440

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 1,615 parts In-Stock

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$0.440

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Digiode

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ComSIT Distribution GmbH

Germany . 1,867 parts In-Stock

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Anansix

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One Stop Electronics

USA . 892 parts In-Stock

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$2.010

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Northwest PG Solutions

USA . 799 parts In-Stock

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Authorized Procurement Solutions

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UNI Independent Distributors

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A-Z Elektronik GmbH

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Corphita

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Native Components

USA . 972 parts In-Stock

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GreenTree Electronics

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Perfect Parts

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Overview

Unlock unparalleled performance with the BAP70Q from NXP Semiconductors—your go-to choice for high-quality PIN diodes. Renowned for their innovation and reliability, NXP delivers unmatched value in every application, from RF attenuators to advanced signal processing. With a compact design and superior efficiency, the BAP70Q enhances system performance while minimizing space. Elevate your projects today with cutting-edge technology that ensures durability and excellence!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and protection against environmental factors, making the diode suitable for various applications.

Config: COMPLEX

A complex configuration allows for versatile connections and configurations in circuit design, enabling advanced functionality.

Frequency Band: S BAND

Designed for S Band applications, this diode is perfect for radar, satellite, and other communication uses, ensuring reliable performance within this critical frequency range.

Surface Mount: YES

Surface mount capability allows for easy integration into modern PCB designs, reducing assembly time and improving overall reliability.

Maximum Diode Capacitance: 3 pF

A low capacitance rating signifies minimal signal distortion, making this diode ideal for high-frequency applications where precision is required.

Package Shape: RECTANGULAR

The rectangular shape enables efficient use of PCB space and aligns with typical layouts, simplifying design processes.

No. of Terminals: 5

With 5 terminals, this diode allows for complex connectivity options, accommodating a wide range of circuit configurations.

Package Style (Meter): SMALL OUTLINE

The small outline package style enhances space-saving on PCBs and promotes high-density mounting, suitable for compact electronic designs.

Application: ATTENUATOR

Designed specifically for use as an attenuator, this product excels in controlling signal levels, making it essential for various RF applications.

Terminal Finish: PURE TIN

Pure tin terminal finish ensures excellent solderability and enhances reliability in connection performance over time.

Terminal Position: DUAL

The dual terminal position offers flexibility for PCB design and layout, facilitating efficient assembly and heat dissipation.

Maximum Diode Forward Resistance: 1.9 ohm

A low forward resistance value minimizes voltage drop and power loss, ensuring efficient operation in signal processing applications.

Nominal Minority Carrier Lifetime: 1.25 us

A nominal lifetime of 1.25 us indicates effective carrier recombination, which supports high-speed operation and enhances performance in dynamic applications.

Diode Type: PIN DIODE

As a PIN diode, it provides excellent switching characteristics and is suitable for RF and microwave applications, enhancing overall circuit reliability.

Technology: POSITIVE-INTRINSIC-NEGATIVE

The PIN technology allows for better control of carrier lifetimes and makes this diode ideal for varied applications including RF switches and attenuators.

Terminal Form: GULL WING

Gull wing terminals improve surface mountability and ensure a robust connection to the PCB, which enhances product reliability.

No. of Elements: 4

Four elements allow for greater versatility in design and optimal performance in signal processing, making it suitable for complex applications.

Diode Element Material: SILICON

Silicon material provides excellent electrical characteristics and ensures long-term stability and performance, making this diode a reliable choice for engineers.

Technical Specifications

PIN Diodes BAP70Q attributes and parameters. Explore more PIN Diodes devices from NXP Semiconductors

Specs

Application:

ATTENUATOR

Config:

COMPLEX

Maximum Diode Capacitance:

3 pF

Diode Element Material:

SILICON

Maximum Diode Forward Resistance:

1.9 ohm

Diode Type:

Frequency Band:

S BAND

JESD-30 Code:

R-PDSO-G5

Nominal Minority Carrier Lifetime:

1.25 us

Moisture Sensitivity Level (MSL):

1

No. of Elements:

4

No. of Terminals:

5

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Qualification:

Not Qualified

Surface Mount:

YES

Technology:

POSITIVE-INTRINSIC-NEGATIVE

Terminal Finish:

PURE TIN

Terminal Form:

Terminal Position:

Trade Compliance

BAP70Q Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00

SB

8541.10.00.80

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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