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NSVP249SDSF3T1G

Onsemi

NSVP249SDSF3T1G by Onsemi

NSVP249SDSF3T1G by Onsemi is a PIN diode with 2 elements, 0.23 pF capacitance, and 50V reverse voltage. It operates in VHF to UHF bands, ideal for RF switches and attenuators due to its low forward resistance of 4.5 ohm and high breakdown voltage. This small outline package with Gull Wing terminals can withstand temperatures from -55 °C to 125°C.

Median Price

$0.402

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 1 parts In-Stock

1+ parts

$0.153

100+ parts

$0.133

1k+ parts

$0.120

10k+ parts

$0.117

1

$0.153

$0.133

$0.120

$0.117

DigiKey

USA . 1,292 parts In-Stock

1+ parts

$0.650

100+ parts

$0.247

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$0.167

10k+ parts

$0.117

1,292

$0.650

$0.247

$0.167

$0.117

Mouser Electronics

USA . 315 parts In-Stock

1+ parts

$0.660

100+ parts

$0.247

1k+ parts

$0.167

10k+ parts

$0.119

315

$0.660

$0.247

$0.167

$0.119

Flip Electronics (Authorized)

USA . 240,000 parts In-Stock

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Verical

USA . 27,000 parts In-Stock

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$0.048

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$0.048

Chip1Stop

Japan . 1 parts In-Stock

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1

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Digiode

USA . 89 parts In-Stock

1+ parts

$0.345

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89

$0.345

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Vyrian

USA . 286 parts In-Stock

1+ parts

$0.363

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286

$0.363

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Flip Electronics

USA . 240,000 parts In-Stock

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240,000

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Component Stockers USA

USA . 4,321 parts In-Stock

1+ parts

$0.060

100+ parts

$0.260

1k+ parts

$0.160

10k+ parts

-

4,321

$0.060

$0.260

$0.160

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Corphita

USA . 577 parts In-Stock

1+ parts

$0.327

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577

$0.327

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Corohmni

South Africa . 315 parts In-Stock

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$0.363

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315

$0.363

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Perfect Parts

USA . 16,968 parts In-Stock

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Kulean Microsystems

USA . 7,900 parts In-Stock

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7,900

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SupplyDigital Components

Austria . 7,472 parts In-Stock

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TANS Electronics

Latvia . 6,927 parts In-Stock

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Problanco Electronics

Mexico . 6,316 parts In-Stock

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UHIMA Technologies

Türkiye . 583 parts In-Stock

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583

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Overview

Unleash the power of very high frequency to ultra-high frequency applications with the NSVP249SDSF3T1G PIN Diode from Onsemi. With a package body material of plastic/epoxy and a maximum diode forward resistance of 4.5 ohm, this series connected, center tap device offers superior performance and reliability. Ideal for RF switches, attenuators, and phase shifters, this PIN diode provides exceptional value and benefits to customers seeking cutting-edge technology in their designs. Trust Onsemi's reputation for quality and innovation to take your applications to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and protection for the diodes, making them suitable for various operating conditions.

Frequency Band: VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

Wide frequency band allows for versatile applications in high-frequency circuits and communication systems.

Maximum Diode Capacitance: 0.23 pF

Low diode capacitance ensures minimal signal distortion and high-frequency performance.

Reverse Test Voltage: 50 V

High reverse test voltage rating provides robust protection against reverse voltage breakdown.

Maximum Operating Temperature: 125 °C

High maximum operating temperature ensures reliable performance even in demanding environments.

Maximum Power Dissipation: 0.1 W

Low power dissipation helps in reducing heat generation and improves the overall efficiency of the diodes.

Technology: POSITIVE-INTRINSIC-NEGATIVE

The PIN diode technology offers low capacitance and high switching speed, making them ideal for RF applications.

Technical Specifications

PIN Diodes NSVP249SDSF3T1G attributes and parameters. Explore more PIN Diodes devices from Onsemi

Specs

Minimum Breakdown Voltage:

50 V

Config:

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

Maximum Diode Capacitance:

.23 pF

Nominal Diode Capacitance:

.23 pF

Diode Element Material:

SILICON

Maximum Diode Forward Resistance:

4.5 ohm

Diode Resistive Test Current:

10 mA

Diode Resistive Test Frequency:

100 MHz

Diode Type:

Frequency Band:

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e6

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

3

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

.1 W

Reference Standard:

AEC-Q101

Reverse Test Voltage:

50 V

Surface Mount:

YES

Technology:

POSITIVE-INTRINSIC-NEGATIVE

Terminal Finish:

TIN BISMUTH

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NSVP249SDSF3T1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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