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BAR8802VE6327XTSA1

Infineon Technologies

BAR8802VE6327XTSA1 by Infineon Technologies

BAR8802VE6327XTSA1 by Infineon Technologies is a PIN diode with 0.4 pF capacitance, 2.5 ohm forward resistance, and 80 V breakdown voltage. It operates in the ultra high frequency band for switching applications. With a temperature range of -55 to 150 °C, it features a small outline package style and matte tin terminal finish.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,150 parts In-Stock

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1,150

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Nova Conductors

Japan . 500 parts In-Stock

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500

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VNN

France . 282 parts In-Stock

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282

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Digiode

USA . 258 parts In-Stock

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258

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Distributors (Availability)

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Ampacity Inc.

Singapore . 684 parts In-Stock

1+ parts

$0.010

100+ parts

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684

$0.010

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Modulus Dynamics

Lithuania . 30,511 parts In-Stock

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$0.053

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$0.051

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$0.049

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30,511

$0.053

$0.051

$0.049

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Aztec Data Supply Inc.

USA . 211 parts In-Stock

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$0.150

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211

$0.150

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Corohmni

South Africa . 470 parts In-Stock

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$0.151

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470

$0.151

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Semicontronic

India . 128 parts In-Stock

1+ parts

$1.010

100+ parts

$0.985

1k+ parts

$0.980

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128

$1.010

$0.985

$0.980

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AZTECH Wire

Italy . 516 parts In-Stock

1+ parts

$19.729

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516

$19.729

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Argo Parts USA

USA . 4,256 parts In-Stock

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4,256

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Continental Prestige Electronics

USA . 790 parts In-Stock

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790

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Bastille Electronics

Australia . 200 parts In-Stock

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200

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Corphita

USA . 40 parts In-Stock

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40

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Overview

Discover the BAR8802VE6327XTSA1 by Infineon Technologies, a top-quality PIN diode for ultra high frequency applications. With a durable plastic/epoxy package and a compact rectangular shape, this diode offers exceptional performance and reliability in switching applications. Experience seamless integration with its surface mount capability and dual terminal position. Trust Infineon Technologies for cutting-edge technology and unmatched value. Upgrade your projects with the BAR8802VE6327XTSA1 and unlock endless possibilities.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the package lightweight and durable, ideal for applications where weight and resilience are important factors.

Frequency Band: ULTRA HIGH FREQUENCY

Suitable for high-frequency applications, providing enhanced performance and signal integrity in advanced electronic systems.

Maximum Diode Capacitance: 0.4 pF

Low diode capacitance ensures minimal signal distortion and high-speed switching capabilities, making it efficient for quick response and high-frequency operations.

Surface Mount: YES

Surface mount capability allows for easy and efficient installation on circuit boards, saving space and simplifying the manufacturing process.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this product can withstand harsh environmental conditions and maintain stable performance in various temperature ranges.

Minimum Breakdown Voltage: 80 V

The minimum breakdown voltage of 80V ensures reliable operation and protection against voltage spikes, making it suitable for high-voltage applications.

Diode Type: PIN DIODE

PIN diodes are known for their fast response times, low distortion, and high power handling capabilities, making them an excellent choice for switching and high-frequency applications.

Technical Specifications

PIN Diodes BAR8802VE6327XTSA1 attributes and parameters. Explore more PIN Diodes devices from Infineon Technologies

Specs

Application:

SWITCHING

Minimum Breakdown Voltage:

80 V

Config:

SINGLE

Maximum Diode Capacitance:

.4 pF

Diode Element Material:

SILICON

Maximum Diode Forward Resistance:

2.5 ohm

Diode Type:

Frequency Band:

ULTRA HIGH FREQUENCY

JESD-30 Code:

R-PDSO-F2

JESD-609 Code:

e3

Nominal Minority Carrier Lifetime:

.5 us

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Maximum Power Dissipation:

.25 W

Surface Mount:

YES

Technology:

POSITIVE-INTRINSIC-NEGATIVE

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

BAR8802VE6327XTSA1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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