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BAR88-02VE6327

Infineon Technologies

BAR88-02VE6327 by Infineon Technologies

Infineon's BAR88-02VE6327 is a PIN diode for ultra-high frequency applications. With a max forward resistance of 2.5 ohm, it operates b/w -55 to 150 °C. Suitable for switching purposes, this diode has a small outline package and matte tin terminal finish.

Median Price

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Lifecycle Status

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8

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1k+

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Chip Stock

USA . 17,940 parts In-Stock

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Sweden . 3,000 parts In-Stock

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Resion

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France . 2,471 parts In-Stock

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Digiode

USA . 803 parts In-Stock

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Nova Conductors

Japan . 600 parts In-Stock

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

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Semicontronic

India . 1,193 parts In-Stock

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Modulus Dynamics

Lithuania . 18,611 parts In-Stock

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Corohmni

South Africa . 2,073 parts In-Stock

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Aztec Data Supply Inc.

USA . 187 parts In-Stock

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Ampacity Inc.

Singapore . 858 parts In-Stock

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AZTECH Wire

Italy . 708 parts In-Stock

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Argo Parts USA

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Continental Prestige Electronics

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RC Electronics

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Authorized Procurement Solutions

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Microchip USA

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Overview

Discover the BAR88-02VE6327 by Infineon Technologies, a top-of-the-line PIN diode that offers unparalleled quality and reliability. Perfect for ultra-high frequency applications, this single-configured diode features a small outline package and matte tin terminal finish, making it ideal for switching tasks. With a maximum power dissipation of 0.25W and a minimal operating temperature of -55°C, this diode guarantees high performance even in the most demanding environments. Trust Infineon Technologies to deliver cutting-edge technology that meets your needs and exceeds your expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic and epoxy material provides durability and protection for the diode, making it suitable for various applications.

Frequency Band: ULTRA HIGH FREQUENCY

Designed for high-frequency applications, ensuring reliable performance in demanding environments.

Maximum Diode Capacitance: 0.4 pF

Low diode capacitance allows for fast switching speed and minimal signal loss.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this diode can withstand elevated temperature conditions without compromising performance.

Minimum Operating Temperature: -55 °C

Suitable for use in a wide range of temperature environments, ensuring versatility in applications.

Diode Resistive Test Frequency: 100 MHz

Capable of handling high-frequency resistance tests, indicating the diode's reliability and performance.

Technical Specifications

PIN Diodes BAR88-02VE6327 attributes and parameters. Explore more PIN Diodes devices from Infineon Technologies

Specs

Application:

SWITCHING

Minimum Breakdown Voltage:

80 V

Config:

SINGLE

Maximum Diode Capacitance:

.4 pF

Nominal Diode Capacitance:

.25 pF

Diode Element Material:

SILICON

Maximum Diode Forward Resistance:

2.5 ohm

Diode Resistive Test Current:

1 mA

Diode Resistive Test Frequency:

100 MHz

Diode Type:

Frequency Band:

ULTRA HIGH FREQUENCY

JESD-30 Code:

R-PDSO-F2

JESD-609 Code:

e3

Nominal Minority Carrier Lifetime:

.5 us

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

.25 W

Reverse Test Voltage:

0 V

Sub-Category:

PIN Diodes

Surface Mount:

YES

Technology:

POSITIVE-INTRINSIC-NEGATIVE

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

BAR88-02VE6327 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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