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BAR63J

STMicroelectronics

BAR63J by STMicroelectronics

BAR63J by STMicroelectronics is a single PIN diode designed for switching applications. It features a max capacitance of 0.3 pF, operates at up to 150 °C, and has a reverse voltage of 50 V. Its compact surface mount design ensures efficient performance in electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,075 parts In-Stock

1+ parts

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4,075

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Digiode

USA . 3,958 parts In-Stock

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3,958

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Anansix

USA . 2,264 parts In-Stock

1+ parts

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2,264

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,952 parts In-Stock

1+ parts

$0.090

100+ parts

-

1k+ parts

$0.081

10k+ parts

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1,952

$0.090

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$0.081

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MKK Technologies

India . 382 parts In-Stock

1+ parts

$0.170

100+ parts

-

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382

$0.170

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DigiPath Technology Company

USA . 382 parts In-Stock

1+ parts

$0.170

100+ parts

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382

$0.170

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Corphita

USA . 3,620 parts In-Stock

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3,620

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Northwest PG Solutions

USA . 2,150 parts In-Stock

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2,150

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Native Components

USA . 630 parts In-Stock

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630

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Parana Technologies

USA . 298 parts In-Stock

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$0.108

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298

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$0.108

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Overview

Unlock exceptional performance and reliability with the BAR63J from STMicroelectronics, a leader in semiconductor innovation. Designed for seamless switching applications, this high-quality PIN diode offers unmatched efficiency and low capacitance, ensuring faster response times and superior signal integrity. Experience peace of mind knowing you’re backed by ST’s commitment to excellence, empowering your designs with the durability and precision they deserve. Elevate your projects today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package material ensures durability and resistance to environmental factors, making the product suitable for a variety of applications.

Config: SINGLE

A single diode configuration simplifies circuit design and reduces board space, making it easier to integrate into compact applications.

Surface Mount: YES

Surface mount capability enhances flexibility in device mounting and enables automated assembly processes, improving manufacturing efficiency.

Maximum Diode Capacitance: 0.3 pF

Low maximum diode capacitance minimizes signal distortion and enables high-frequency applications, making this diode ideal for RF switching.

Package Shape: RECTANGULAR

The rectangular package shape offers efficient space utilization on PCB layouts while allowing for easy integration with other components.

Reverse Test Voltage: 0 V

A reverse test voltage of 0 V indicates that this diode is optimized for specific applications where reverse voltage isn't a concern, enhancing reliability.

No. of Terminals: 2

Having only two terminals simplifies connection and reduces circuit complexity, making the diode easy to implement in various designs.

Package Style (Meter): SMALL OUTLINE

The small outline package style allows for a compact footprint, ideal for space-constrained applications in modern electronic devices.

Application: SWITCHING

Designed for switching applications, this diode can efficiently control the flow of electrical signals, enhancing performance in communication systems.

Maximum Operating Temperature: 150 °C

The ability to operate at temperatures up to 150 °C ensures reliability in high-temperature environments, suitable for automotive and industrial applications.

Terminal Finish: MATTE TIN

A matte tin terminal finish provides good solderability and corrosion resistance, ensuring a reliable connection over the product's lifespan.

Terminal Position: DUAL

The dual terminal position design optimizes layout flexibility and aids in better thermal performance during operation.

Maximum Diode Forward Resistance: 2 ohm

An excellent forward resistance of 2 ohm minimizes power losses during operation, contributing to efficient performance in circuit applications.

Maximum Power Dissipation: 0.25 W

A maximum power dissipation of 0.25 W allows the diode to handle moderate power levels, making it suitable for various electronic applications.

Nominal Diode Capacitance: 0.4 pF

A low nominal diode capacitance of 0.4 pF supports high-frequency operation, making it an excellent choice for RF and microwave applications.

Nominal Minority Carrier Lifetime: 0.125 µs

A nominal minority carrier lifetime of 0.125 µs helps improve switching speed, making the diode ideal for fast signal applications.

Minimum Breakdown Voltage: 50 V

The minimum breakdown voltage of 50 V ensures robustness against high voltage spikes, enhancing reliability in diverse electronic circuits.

Diode Resistive Test Frequency: 100 MHz

A resistive test frequency of 100 MHz indicates the diode’s capability to perform well in high-speed applications, particularly in RF circuits.

Diode Resistive Test Current: 5 mA

This low test current (5 mA) suggests minimal current draw during testing, providing reassurance of the diode's efficiency and performance.

Diode Type: PIN DIODE

As a PIN diode, it combines the benefits of high-speed switching and low-loss performance, making it an excellent choice for RF and switching applications.

Technology: POSITIVE-INTRINSIC-NEGATIVE

The PIN technology allows for high electron mobility, which improves switching performance and linearity, crucial for RF applications.

Terminal Form: C BEND

The C bend terminal form is designed for improved solderability and mechanical stability, ensuring a reliable connection in various circuits.

Diode Element Material: SILICON

Silicon as the diode element material offers good thermal stability and excellent electrical properties, making it ideal for a wide range of applications.

Technical Specifications

PIN Diodes BAR63J attributes and parameters. Explore more PIN Diodes devices from STMicroelectronics

Specs

Application:

SWITCHING

Minimum Breakdown Voltage:

50 V

Config:

SINGLE

Maximum Diode Capacitance:

.3 pF

Nominal Diode Capacitance:

.4 pF

Diode Element Material:

SILICON

Maximum Diode Forward Resistance:

2 ohm

Diode Resistive Test Current:

5 mA

Diode Resistive Test Frequency:

100 MHz

Diode Type:

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Nominal Minority Carrier Lifetime:

.125 us

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Maximum Power Dissipation:

.25 W

Qualification:

Not Qualified

Reverse Test Voltage:

0 V

Sub-Category:

PIN Diodes

Surface Mount:

YES

Technology:

POSITIVE-INTRINSIC-NEGATIVE

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

BAR63J Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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