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BAR63-04E6327

Infineon Technologies

BAR63-04E6327 by Infineon Technologies

Infineon's BAR63-04E6327 is a PIN diode with 2 elements, suitable for S band applications. It features a max forward resistance of 2 ohm and can handle up to 0.25 W power dissipation. Ideal for switching purposes with a reverse test voltage of 5 V and operating temperature up to 150°C.

Median Price

$0.280

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

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Mouser Electronics

USA . 6,873 parts In-Stock

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$0.280

100+ parts

$0.135

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$0.123

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$0.106

6,873

$0.280

$0.135

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$0.106

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Digiode

USA . 616 parts In-Stock

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Bristol Electronics

USA . 4,120 parts In-Stock

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$0.450

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$0.225

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$0.090

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$0.068

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$0.068

Diverse Electronics

Canada . 18,000 parts In-Stock

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VNN

France . 8,807 parts In-Stock

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Vyrian

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A&K Electronics

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Rotakorn

Sweden . 4,525 parts In-Stock

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ComSIT Distribution GmbH

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ComSIT USA

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Electronic Expediters

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Mentor Electronics Marketing, LLC

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Nova Conductors

Japan . 500 parts In-Stock

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Modulus Dynamics

Lithuania . 17,259 parts In-Stock

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$0.113

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$0.109

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Ampacity Inc.

Singapore . 8,275 parts In-Stock

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Corphita

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Lixinc

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Perfect Parts

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Microchip USA

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Continental Prestige Electronics

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Argo Parts USA

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Bastille Electronics

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Overview

Looking for high-quality PIN diodes for your switching applications? Look no further than the BAR63-04E6327 by Infineon Technologies. With a reputation for excellence, Infineon delivers top-notch products that meet the needs of customers worldwide. The BAR63-04E6327 offers exceptional performance in the S band frequency range, making it ideal for various applications. Its small outline package and dual terminal position provide convenience and flexibility in installation. Trust Infineon to provide reliable and efficient solutions for your electronic needs. Choose the BAR63-04E6327 for superior quality and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and protection for the diodes, ensuring a longer lifespan for the product.

Config: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

Series connected configuration with center tap and 2 elements allows for more precise control and efficient switching operations.

Frequency Band: S BAND

Operates in the S band frequency, making it suitable for a wide range of applications within that frequency range.

Surface Mount: YES

Surface mount capability makes it easier to integrate into circuit boards, saving space and simplifying the overall design.

Maximum Diode Capacitance: 0.3 pF

Low diode capacitance ensures minimal interference and distortion in signal processing, maintaining high signal fidelity.

Package Shape: RECTANGULAR

Rectangular package shape allows for easy placement and soldering onto circuit boards, improving installation efficiency.

Reverse Test Voltage: 5 V

Can withstand up to 5 volts of reverse voltage, providing protection against reverse polarity events.

No. of Terminals: 3

Having 3 terminals allows for versatile connectivity options and increased functionality in circuit design.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on the circuit board and enables compact device designs.

Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable performance in switching circuits.

Maximum Operating Temperature: 150 °C

High maximum operating temperature of 150°C allows for usage in a wide range of environmental conditions.

Terminal Finish: MATTE TIN

Matte tin terminal finish provides a good soldering surface and corrosion resistance, ensuring long-term connectivity.

Terminal Position: DUAL

Dual terminal position allows for flexible placement and connection options, enhancing overall circuit design versatility.

Maximum Diode Forward Resistance: 2 ohm

Low forward resistance ensures minimal power loss and high efficiency in signal transmission.

Maximum Power Dissipation: 0.25 W

High power dissipation capability of 0.25 watts enables the diodes to handle higher power loads without overheating.

Nominal Diode Capacitance: 0.25 pF

Low nominal diode capacitance maintains signal integrity and reduces signal distortion during processing.

Nominal Minority Carrier Lifetime: 0.075 us

Short minority carrier lifetime allows for fast response times and improved switching speed in the diodes.

Minimum Breakdown Voltage: 50 V

High minimum breakdown voltage of 50 volts provides protection against voltage surges and ensures overall system reliability.

Peak Reflow Temperature °C: 260

Peak reflow temperature of 260°C allows for safe and reliable soldering processes during assembly.

Diode Resistive Test Frequency: 100 MHz

Resistive test frequency of 100 MHz ensures accurate testing and validation of the diode's performance within the specified frequency range.

Diode Resistive Test Current: 5 mA

Resistive test current of 5 mA provides enough current for reliable testing without causing damage to the diodes.

Diode Type: PIN DIODE

Pin diodes are known for their high speed and low distortion characteristics, making them ideal for high-frequency switching applications.

Technology: POSITIVE-INTRINSIC-NEGATIVE

Positive-intrinsic-negative technology allows for precise control over the diode's behavior, resulting in high performance and efficiency.

Terminal Form: GULL WING

Gull wing terminal form provides mechanical strength and secure solder joints, ensuring long-lasting connectivity in the circuit.

No. of Elements: 2

Having 2 elements in the diode design allows for improved switching performance and better control over signal processing.

Diode Element Material: SILICON

Silicon diode element material offers high stability and reliability in the diode's performance, ensuring consistent operation over time.

Technical Specifications

PIN Diodes BAR63-04E6327 attributes and parameters. Explore more PIN Diodes devices from Infineon Technologies

Specs

Application:

SWITCHING

Minimum Breakdown Voltage:

50 V

Config:

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

Maximum Diode Capacitance:

.3 pF

Nominal Diode Capacitance:

.25 pF

Diode Element Material:

SILICON

Maximum Diode Forward Resistance:

2 ohm

Diode Resistive Test Current:

5 mA

Diode Resistive Test Frequency:

100 MHz

Diode Type:

Frequency Band:

S BAND

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Nominal Minority Carrier Lifetime:

.075 us

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

.25 W

Qualification:

Not Qualified

Reverse Test Voltage:

5 V

Sub-Category:

PIN Diodes

Surface Mount:

YES

Technology:

POSITIVE-INTRINSIC-NEGATIVE

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

BAR63-04E6327 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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