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BAP64-05W,135

NXP Semiconductors

BAP64-05W,135 by NXP Semiconductors

NXP Semiconductors' BAP64-05W,135 is a PIN diode with common cathode configuration and 2 elements. It has a reverse test voltage of 1V, max operating temperature of 150°C, and diode forward resistance of 40 ohm. Ideal for RF switches in applications requiring high-speed switching and low insertion loss.

Median Price

$0.120

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 40 parts In-Stock

1+ parts

$0.280

100+ parts

$0.172

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40

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Flip Electronics (Authorized)

USA . 270,000 parts In-Stock

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Rochester

USA . 52,280 parts In-Stock

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$0.120

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$0.100

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$0.089

52,280

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$0.120

$0.100

$0.089

Verical

USA . 40,000 parts In-Stock

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$0.112

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Element14

Singapore . 4,720 parts In-Stock

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$0.162

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$0.106

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$0.104

4,720

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Farnell

UK . 4,350 parts In-Stock

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$0.101

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$0.089

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4,350

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Distributors (In-Stock)

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Digiode

USA . 1,482 parts In-Stock

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$0.094

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Vyrian

USA . 2,524 parts In-Stock

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$0.099

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Flip Electronics

USA . 270,000 parts In-Stock

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Anansix

USA . 2,642 parts In-Stock

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Distributors (Availability)

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Corphita

USA . 419 parts In-Stock

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$0.089

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Native Components

USA . 459 parts In-Stock

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$9.608

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459

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Northwest PG Solutions

USA . 410 parts In-Stock

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$10.568

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$9.511

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Perfect Parts

USA . 89,600 parts In-Stock

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Authorized Procurement Solutions

USA . 12,000 parts In-Stock

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Continental Prestige Electronics

USA . 6,190 parts In-Stock

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$0.123

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$0.068

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6,190

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UNI Independent Distributors

Spain . 4,590 parts In-Stock

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Overview

Unleash the power of innovation with the BAP64-05W,135 by NXP Semiconductors. This top-of-the-line PIN Diode boasts superior quality and reliability, making it the go-to choice for a wide range of applications. With its common cathode configuration and surface mount capability, this diode offers unmatched performance and versatility. Whether you're in the telecommunications, automotive, or industrial sector, the BAP64-05W,135 delivers value, benefits, and advantages that will elevate your projects to new heights. Trust NXP Semiconductors to provide cutting-edge solutions that push boundaries and exceed expectations.

Feature Benefit Bullets

Config: COMMON CATHODE, 2 ELEMENTS

Common cathode configuration with 2 elements allows for easy integration and improved performance in various applications.

Surface Mount: YES

Surface mount capability enables easy and efficient assembly onto circuit boards.

Reverse Test Voltage: 1 V

Low reverse test voltage ensures safe operation and protection against reverse current.

Maximum Operating Temperature: 150 °C

High maximum operating temperature provides flexibility and reliability in different environmental conditions.

Terminal Finish: TIN

Tin terminal finish offers good solderability and long-term durability.

Maximum Diode Forward Resistance: 40 ohm

Low diode forward resistance results in efficient signal transmission and minimal power loss.

Nominal Diode Capacitance: 0.37 pF

Low capacitance ensures fast response times and high-frequency operation.

Nominal Minority Carrier Lifetime: 1.55 us

Short minority carrier lifetime allows for quick switching speeds and improved performance in high-frequency applications.

Minimum Breakdown Voltage: 100 V

High breakdown voltage provides protection against voltage surges and ensures long-term reliability.

Maximum Time At Peak Reflow Temperature (s): 30

Short reflow time helps in efficient and fast assembly processes.

Peak Reflow Temperature °C: 260

High peak reflow temperature ensures proper soldering and long-term stability.

Diode Resistive Test Frequency: 100 MHz

High test frequency allows for accurate characterization and performance testing of the diodes.

Diode Resistive Test Current: 0.5 mA

Low test current ensures minimal power dissipation during testing.

Diode Type: PIN DIODE

PIN diodes are known for their high-speed switching capabilities and low distortion characteristics.

No. of Elements: 2

Having 2 elements allows for more complex circuit designs and improved functionality.

Technical Specifications

PIN Diodes BAP64-05W,135 attributes and parameters. Explore more PIN Diodes devices from NXP Semiconductors

Specs

Minimum Breakdown Voltage:

100 V

Config:

COMMON CATHODE, 2 ELEMENTS

Nominal Diode Capacitance:

.37 pF

Maximum Diode Forward Resistance:

40 ohm

Diode Resistive Test Current:

.5 mA

Diode Resistive Test Frequency:

100 MHz

Diode Type:

JESD-609 Code:

e3

Nominal Minority Carrier Lifetime:

1.55 us

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

Maximum Operating Temperature:

150 Cel

Peak Reflow Temperature (C):

260

Reverse Test Voltage:

1 V

Sub-Category:

PIN Diodes

Surface Mount:

YES

Terminal Finish:

TIN

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

BAP64-05W,135 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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