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1SV315

Onsemi

1SV315 by Onsemi

The Onsemi 1SV315 is a PIN diode with a reverse test voltage of 50V and nominal capacitance of 0.23pF. It operates at temperatures up to 125 °C, making it suitable for RF switches, attenuators, and phase shifters in various electronic applications.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 1,497 parts In-Stock

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Digiode

USA . 1,322 parts In-Stock

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1,322

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Distributors (Availability)

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Native Components

USA . 704 parts In-Stock

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$25.856

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704

$25.856

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Northwest PG Solutions

USA . 483 parts In-Stock

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$28.442

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$25.597

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483

$28.442

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Kepictronics

USA . 306,000 parts In-Stock

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306,000

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TANS Electronics

Latvia . 3,267 parts In-Stock

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3,267

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SupplyDigital Components

Austria . 3,061 parts In-Stock

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Corphita

USA . 2,238 parts In-Stock

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Problanco Electronics

Mexico . 604 parts In-Stock

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UHIMA Technologies

Türkiye . 269 parts In-Stock

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Kulean Microsystems

USA . 171 parts In-Stock

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Corohmni

South Africa . 112 parts In-Stock

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Overview

Discover the high-quality 1SV315 PIN Diode by Onsemi, a trusted manufacturer known for superior products. Ideal for various applications, this surface-mount diode offers a reverse test voltage of 50V and a nominal capacitance of 0.23pF. With a minimum breakdown voltage of 50V and a maximum operating temperature of 125 °C, this PIN diode provides exceptional value and performance to customers. Experience the benefits and advantages of the 1SV315 for your next project.

Feature Benefit Bullets

Surface Mount: YES

The surface mount feature allows for easy and convenient installation on circuit boards, saving time and effort during production.

Reverse Test Voltage: 50 V

With a high reverse test voltage of 50 V, this PIN diode can handle higher voltage situations and provide reliable performance in demanding applications.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature of 125 °C ensures that this PIN diode can operate efficiently in various temperature conditions, making it suitable for a wide range of environments.

Nominal Diode Capacitance: 0.23 pF

The low nominal diode capacitance of 0.23 pF enables high-frequency operation and improved signal integrity, making this product ideal for RF and microwave applications.

Minimum Breakdown Voltage: 50 V

The minimum breakdown voltage of 50 V indicates the reliability and robustness of this PIN diode in preventing voltage spikes or breakdowns, ensuring long-term durability.

Diode Type: PIN DIODE

Being a PIN diode, this product offers low distortion, high linearity, and fast response times, making it suitable for applications such as RF switches, attenuators, phase shifters, and more.

Technical Specifications

PIN Diodes 1SV315 attributes and parameters. Explore more PIN Diodes devices from Onsemi

Specs

Minimum Breakdown Voltage:

50 V

Nominal Diode Capacitance:

.23 pF

Diode Type:

Maximum Operating Temperature:

125 Cel

Reverse Test Voltage:

50 V

Sub-Category:

PIN Diodes

Surface Mount:

YES

Trade Compliance

1SV315 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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