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1SV315-TL-E

Onsemi

1SV315-TL-E by Onsemi

1SV315-TL-E by Onsemi is a PIN diode with TIN BISMUTH finish. It can withstand peak reflow temp of 260 °C for 30s. Utilizes POSITIVE-INTRINSIC-NEGATIVE tech, SILICON material, ideal for RF switches and attenuators in communication systems.

Median Price

$0.147

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 89,800 parts In-Stock

1+ parts

-

100+ parts

$0.159

1k+ parts

$0.132

10k+ parts

$0.117

89,800

-

$0.159

$0.132

$0.117

DigiKey

USA . 89,800 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.140

89,800

-

-

-

$0.140

Verical

USA . 42,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.147

42,000

-

-

-

$0.147

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,025 parts In-Stock

1+ parts

$0.124

100+ parts

-

1k+ parts

-

10k+ parts

-

2,025

$0.124

-

-

-

Vyrian

USA . 174 parts In-Stock

1+ parts

$0.130

100+ parts

-

1k+ parts

-

10k+ parts

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174

$0.130

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,562 parts In-Stock

1+ parts

$0.117

100+ parts

-

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-

10k+ parts

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1,562

$0.117

-

-

-

Corohmni

South Africa . 84 parts In-Stock

1+ parts

$0.130

100+ parts

-

1k+ parts

-

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-

84

$0.130

-

-

-

Native Components

USA . 42 parts In-Stock

1+ parts

$443.566

100+ parts

$434.695

1k+ parts

$430.259

10k+ parts

$425.824

42

$443.566

$434.695

$430.259

$425.824

Northwest PG Solutions

USA . 1,037 parts In-Stock

1+ parts

$487.923

100+ parts

-

1k+ parts

-

10k+ parts

-

1,037

$487.923

-

-

-

Continental Prestige Electronics

USA . 89,800 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.120

10k+ parts

-

89,800

-

-

$0.120

-

Problanco Electronics

Mexico . 7,042 parts In-Stock

1+ parts

-

100+ parts

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7,042

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-

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TANS Electronics

Latvia . 5,513 parts In-Stock

1+ parts

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5,513

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-

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Kulean Microsystems

USA . 3,916 parts In-Stock

1+ parts

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3,916

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-

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SupplyDigital Components

Austria . 3,300 parts In-Stock

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3,300

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-

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Authorized Procurement Solutions

USA . 2,500 parts In-Stock

1+ parts

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2,500

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RC Electronics

USA . 2,500 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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2,500

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-

-

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UHIMA Technologies

Türkiye . 665 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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665

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-

-

-

Overview

Experience the cutting-edge technology of Onsemi with the 1SV315-TL-E PIN Diode. This high-quality product offers unmatched performance and reliability, making it ideal for a wide range of applications. From RF switches to attenuators, this diode provides exceptional value and benefits to customers looking for superior signal control and efficiency. Trust Onsemi to deliver innovative solutions that meet your needs and exceed your expectations.

Feature Benefit Bullets

Terminal Finish: TIN BISMUTH

Tin Bismuth terminal finish provides high reliability and excellent solderability, making it ideal for applications requiring consistent performance over time.

Maximum Time At Peak Reflow Temperature (s): 30

With a maximum time of 30 seconds at peak reflow temperature, this product ensures stable performance during soldering processes without compromising its longevity.

Peak Reflow Temperature °C: 260

The peak reflow temperature of 260 °C ensures efficient soldering of the PIN diodes, leading to a reliable and durable connection in various electronic circuits.

Diode Type: PIN DIODE

The PIN diode type offers low distortion and fast switching characteristics, making it suitable for high-frequency applications such as RF switching and attenuating signals.

Technology: POSITIVE-INTRINSIC-NEGATIVE

The Positive-Intrinsic-Negative technology used in these PIN diodes results in low capacitance and high linearity, making them perfect for RF and microwave applications requiring high performance.

Diode Element Material: SILICON

Silicon diode element material ensures high reliability, stability, and temperature resistance, making these PIN diodes an excellent choice for diverse electronic applications requiring precision and consistency.

Technical Specifications

PIN Diodes 1SV315-TL-E attributes and parameters. Explore more PIN Diodes devices from Onsemi

Specs

Diode Element Material:

SILICON

Diode Type:

JESD-609 Code:

e6

Moisture Sensitivity Level (MSL):

1

Peak Reflow Temperature (C):

260

Technology:

POSITIVE-INTRINSIC-NEGATIVE

Terminal Finish:

TIN BISMUTH

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

1SV315-TL-E Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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