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1SV316

Onsemi

1SV316 by Onsemi

1SV316 by Onsemi is a PIN diode with 50V reverse test voltage, 125 °C max temp, and 0.23pF capacitance. Ideal for RF switches, attenuators, and phase shifters in communication systems due to its low forward resistance and high breakdown voltage.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 2,467 parts In-Stock

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Digiode

USA . 2,240 parts In-Stock

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Native Components

USA . 835 parts In-Stock

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$46.138

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$44.292

835

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$44.292

Northwest PG Solutions

USA . 2,007 parts In-Stock

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$50.752

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TANS Electronics

Latvia . 7,645 parts In-Stock

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SupplyDigital Components

Austria . 7,636 parts In-Stock

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Problanco Electronics

Mexico . 7,552 parts In-Stock

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Corphita

USA . 1,458 parts In-Stock

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Kulean Microsystems

USA . 1,209 parts In-Stock

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UHIMA Technologies

Türkiye . 923 parts In-Stock

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Corohmni

South Africa . 112 parts In-Stock

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Overview

Experience unparalleled quality and reliability with the Onsemi 1SV316 PIN diode. As a trusted manufacturer in the industry, Onsemi consistently delivers cutting-edge solutions for various applications. The 1SV316 offers exceptional value and benefits, providing customers with superior performance and efficiency. Whether used in RF switches, attenuators, or phase shifters, this PIN diode is sure to elevate your projects to new heights. Trust Onsemi for all your semiconductor needs and see the difference for yourself.

Feature Benefit Bullets

Surface Mount: YES

The surface mount capability makes installation easier and more efficient, as it can be easily attached to circuit boards without the need for additional mounting hardware.

Reverse Test Voltage: 50 V

The high reverse test voltage of 50V provides robust protection against reverse current flow, ensuring the reliability and longevity of the diode.

Maximum Operating Temperature: 125 °C

With a maximum operating temperature of 125 °C, this diode can withstand high levels of heat, making it suitable for demanding applications where temperature fluctuations occur.

Maximum Diode Forward Resistance: 9 ohm

The low maximum forward resistance of 9 ohms ensures minimal power loss and efficient performance of the diode in conducting current in the forward direction.

Nominal Diode Capacitance: 0.23 pF

The low nominal diode capacitance of 0.23 pF facilitates high-speed operations and minimal signal distortion, making it ideal for high-frequency applications.

Minimum Breakdown Voltage: 50 V

With a minimum breakdown voltage of 50V, this diode offers reliable protection against voltage spikes and overloads, ensuring the safety and integrity of the circuit.

Diode Resistive Test Frequency: 100 MHz

The high resistive test frequency of 100 MHz allows for accurate testing and characterization of the diode's performance at high frequencies, ensuring its suitability for modern high-speed circuits.

Diode Resistive Test Current: 10 mA

The moderate resistive test current of 10 mA allows for efficient testing of the diode's electrical characteristics without causing damage or overheating, ensuring accurate results.

Diode Type: PIN DIODE

Being a PIN diode, it offers fast switching speeds, low noise, and high power handling capabilities, making it an excellent choice for RF and microwave applications where high performance is crucial.

Technical Specifications

PIN Diodes 1SV316 attributes and parameters. Explore more PIN Diodes devices from Onsemi

Specs

Minimum Breakdown Voltage:

50 V

Nominal Diode Capacitance:

.23 pF

Maximum Diode Forward Resistance:

9 ohm

Diode Resistive Test Current:

10 mA

Diode Resistive Test Frequency:

100 MHz

Diode Type:

Maximum Operating Temperature:

125 Cel

Reverse Test Voltage:

50 V

Sub-Category:

PIN Diodes

Surface Mount:

YES

Trade Compliance

1SV316 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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