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MMVL3401T1

Onsemi

MMVL3401T1 by Onsemi

MMVL3401T1 by Onsemi is a PIN diode with very high frequency band, 1 pF capacitance, and 0.7 ohm forward resistance. It is used for switching applications at up to 150 °C operating temperature.

Median Price

$0.132

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 21,000 parts In-Stock

1+ parts

-

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$0.132

1k+ parts

$0.110

10k+ parts

$0.098

21,000

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$0.132

$0.110

$0.098

DigiKey

USA . 21,000 parts In-Stock

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$0.170

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$0.170

Verical

USA . 18,000 parts In-Stock

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$0.122

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$0.122

Distributors (In-Stock)

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Vyrian

USA . 1,718 parts In-Stock

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$0.098

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$0.098

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Digiode

USA . 695 parts In-Stock

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$0.103

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695

$0.103

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DigiKey Marketplace

USA . 21,000 parts In-Stock

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21,000

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PC Components Company LLC

USA . 90 parts In-Stock

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90

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Bristol Electronics

USA . 90 parts In-Stock

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90

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Distributors (Availability)

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Corphita

USA . 1,791 parts In-Stock

1+ parts

$0.097

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1,791

$0.097

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Corohmni

South Africa . 259 parts In-Stock

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$0.098

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259

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Component Stockers USA

USA . 24,773 parts In-Stock

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$0.110

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$0.100

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$0.090

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$0.090

24,773

$0.110

$0.100

$0.090

$0.090

Continental Prestige Electronics

USA . 21,000 parts In-Stock

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$0.098

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21,000

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$0.098

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Problanco Electronics

Mexico . 8,350 parts In-Stock

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8,350

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QUARKTWIN TECHNOLOGY LTD

USA . 4,398 parts In-Stock

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4,398

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TANS Electronics

Latvia . 3,201 parts In-Stock

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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SupplyDigital Components

Austria . 1,441 parts In-Stock

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1,441

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Kulean Microsystems

USA . 1,028 parts In-Stock

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UHIMA Technologies

Türkiye . 940 parts In-Stock

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940

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Overview

Upgrade your switching applications with the MMVL3401T1 by Onsemi. With a reputation for top-quality products, Onsemi delivers a PIN diode that offers very high frequency capabilities and low diode capacitance for optimal performance. Ideal for small outline packages, this diode boasts a low forward resistance of 0.7 ohm and can withstand temperatures up to 150 °C. Trust Onsemi to provide reliable, high-performance components for your design needs. Elevate your projects with the MMVL3401T1 today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and protects the diode, making it suitable for various applications.

Frequency Band: VERY HIGH FREQUENCY

Ability to operate in very high frequency band allows for efficient performance in high-speed switching applications.

Maximum Diode Capacitance: 1 pF

Low capacitance ensures minimal signal distortion and fast switching speed.

Package Shape: RECTANGULAR

Rectangular shape enables easy integration into circuit boards and compact designs.

Maximum Diode Forward Resistance: 0.7 ohm

Low forward resistance leads to reduced power losses and higher efficiency in switching operations.

Minimum Breakdown Voltage: 35 V

High breakdown voltage provides reliability and protection against voltage surges.

Diode Resistive Test Frequency: 100 MHz

High test frequency ensures accurate performance evaluation and compatibility with high-frequency applications.

Technology: POSITIVE-INTRINSIC-NEGATIVE

PIN diode technology offers low distortion, high power handling, and fast response times.

Technical Specifications

PIN Diodes MMVL3401T1 attributes and parameters. Explore more PIN Diodes devices from Onsemi

Specs

Application:

SWITCHING

Minimum Breakdown Voltage:

35 V

Config:

SINGLE

Maximum Diode Capacitance:

1 pF

Diode Element Material:

SILICON

Maximum Diode Forward Resistance:

.7 ohm

Diode Resistive Test Current:

10 mA

Diode Resistive Test Frequency:

100 MHz

Diode Type:

Frequency Band:

VERY HIGH FREQUENCY

JESD-30 Code:

R-PDSO-G2

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Maximum Power Dissipation:

.2 W

Qualification:

Not Qualified

Sub-Category:

PIN Diodes

Surface Mount:

YES

Technology:

POSITIVE-INTRINSIC-NEGATIVE

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MMVL3401T1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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