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BAP51-06W,115

NXP Semiconductors

BAP51-06W,115 by NXP Semiconductors

BAP51-06W,115 by NXP Semiconductors is a 2-element common anode PIN diode ideal for RF applications. It features a max operating temp of 150 °C, reverse test voltage of 0V, and low forward resistance of 9Ω. Perfect for high-frequency circuits with minimal capacitance (0.4pF).

Median Price

$0.110

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

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Rochester

USA . 135,276 parts In-Stock

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$0.118

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$0.098

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$0.087

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DigiKey

USA . 135,276 parts In-Stock

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Verical

USA . 128,605 parts In-Stock

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$0.109

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Digiode

USA . 2,662 parts In-Stock

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Vyrian

USA . 3,849 parts In-Stock

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Zilex Electronics Inc.

Canada . 12,000 parts In-Stock

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Anansix

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Corphita

USA . 2,345 parts In-Stock

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Northwest PG Solutions

USA . 1,132 parts In-Stock

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$2.422

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UNI Independent Distributors

Spain . 744 parts In-Stock

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Native Components

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Perfect Parts

USA . 448 parts In-Stock

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Cyclops Electronics Ltd (Excess)

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Microchip USA

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Overview

Unlock unparalleled performance with the BAP51-06W,115 from NXP Semiconductors. This premium PIN diode excels in demanding applications, delivering reliability and efficiency that set you apart. Designed for seamless surface mount integration and optimized for high temperatures, it ensures robust functionality in any environment. Trust NXP’s legacy of innovation to elevate your projects, providing unmatched value and performance every step of the way.

Feature Benefit Bullets

Config: COMMON ANODE, 2 ELEMENTS

The common anode configuration allows for easier circuit integration and application in various signal processing environments.

Surface Mount: YES

Surface mount technology enhances the compactness of the design and facilitates automated assembly, making it suitable for high-density applications.

Reverse Test Voltage: 0 V

This value indicates that the diode can operate safely without reverse voltage, minimizing damage risks in certain applications.

Maximum Operating Temperature: 150 °C

The high operating temperature ensures reliability and performance in demanding environments, making it ideal for automotive and industrial applications.

Terminal Finish: TIN

Tin finish enhances solderability and resistance to oxidation, ensuring better connectivity and longevity in various applications.

Maximum Diode Forward Resistance: 9 ohm

Low forward resistance contributes to minimal signal loss, making it suitable for RF applications where efficiency is critical.

Nominal Diode Capacitance: 0.4 pF

A low capacitance value supports high-frequency performance, making this diode an excellent choice for RF and microwave applications.

Nominal Minority Carrier Lifetime: 0.55 µs

A longer minority carrier lifetime allows for better performance in high-speed switching applications, enhancing overall circuit efficiency.

Minimum Breakdown Voltage: 50 V

This minimum breakdown voltage provides a reliable safety margin in high-voltage applications, allowing for increased design flexibility.

Maximum Time At Peak Reflow Temperature: 30 s

A reasonable reflow time ensures that the diode can withstand soldering processes without degradation, enhancing its reliability in assembly.

Peak Reflow Temperature: 260 °C

A high peak reflow temperature enables compatibility with standard soldering practices, ensuring easy integration into various electronic systems.

Diode Resistive Test Frequency: 100 MHz

With a test frequency of 100 MHz, this diode is well-suited for high-frequency applications, providing consistent performance across a range of signals.

Diode Resistive Test Current: 0.5 mA

This low test current ensures minimal power loss during testing, allowing quick assessments without affecting the diode's performance.

Diode Type: PIN DIODE

PIN diodes are known for their versatility in RF and microwave applications, offering excellent linearity and power handling capabilities.

No. of Elements: 2

The inclusion of two elements provides flexibility in circuit design, allowing for various configurations and improved signal routing.

Technical Specifications

PIN Diodes BAP51-06W,115 attributes and parameters. Explore more PIN Diodes devices from NXP Semiconductors

Specs

Minimum Breakdown Voltage:

50 V

Config:

COMMON ANODE, 2 ELEMENTS

Nominal Diode Capacitance:

.4 pF

Maximum Diode Forward Resistance:

9 ohm

Diode Resistive Test Current:

.5 mA

Diode Resistive Test Frequency:

100 MHz

Diode Type:

JESD-609 Code:

e3

Nominal Minority Carrier Lifetime:

.55 us

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

Maximum Operating Temperature:

150 Cel

Peak Reflow Temperature (C):

260

Reverse Test Voltage:

0 V

Sub-Category:

PIN Diodes

Surface Mount:

YES

Terminal Finish:

TIN

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

BAP51-06W,115 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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