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CPH5513

Onsemi

CPH5513 by Onsemi

CPH5513 by Onsemi is a PIN diode with separate, 2 elements configuration for ultra high frequency applications. It features a max reverse current of 0.1 uA and can operate b/w -55 to 125 °C. With a small outline package style, it is suitable for surface mount designs requiring low diode forward resistance.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,047 parts In-Stock

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2,047

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Vyrian

USA . 1,893 parts In-Stock

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1,893

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Native Components

USA . 390 parts In-Stock

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$2.140

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390

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Northwest PG Solutions

USA . 2,038 parts In-Stock

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$2.354

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2,038

$2.354

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TANS Electronics

Latvia . 7,700 parts In-Stock

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7,700

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SupplyDigital Components

Austria . 6,604 parts In-Stock

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Corphita

USA . 2,283 parts In-Stock

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Kulean Microsystems

USA . 2,212 parts In-Stock

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Problanco Electronics

Mexico . 443 parts In-Stock

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UHIMA Technologies

Türkiye . 386 parts In-Stock

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Corohmni

South Africa . 334 parts In-Stock

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Overview

Enhance your electronic designs with the CPH5513 PIN diode by Onsemi. Manufactured to the highest standards, this versatile component offers ultra-high frequency capabilities and a small outline package for easy integration. Whether used in RF switches, attenuators, or phase shifters, this diode provides low forward resistance and high reverse voltage, ensuring superior performance in a wide range of applications. Trust Onsemi's expertise and quality to bring value and efficiency to your projects with the CPH5513.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides durability and reliability for the package, ensuring the product can withstand various environmental conditions.

Frequency Band: ULTRA HIGH FREQUENCY

Designed for ultra high frequency applications, making it suitable for advanced communication systems and high-speed data transmission.

Surface Mount: YES

Surface mount capability allows for easy integration onto circuit boards, reducing assembly time and cost.

Maximum Reverse Current: 0.1 uA

Low maximum reverse current helps in minimizing power consumption and improving overall efficiency of the product.

Maximum Operating Temperature: 125 °C

High maximum operating temperature range ensures the product can handle elevated temperatures without compromising performance.

Diode Type: PIN DIODE

Utilizing PIN diode technology provides fast switching speeds, low distortion, and high linearity, making it ideal for RF switching and attenuator applications.

Technical Specifications

PIN Diodes CPH5513 attributes and parameters. Explore more PIN Diodes devices from Onsemi

Specs

Config:

SEPARATE, 2 ELEMENTS

Diode Element Material:

SILICON

Maximum Diode Forward Resistance:

2.5 ohm

Diode Type:

Frequency Band:

ULTRA HIGH FREQUENCY

JESD-30 Code:

R-PDSO-G5

No. of Elements:

2

No. of Terminals:

5

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Maximum Power Dissipation:

.35 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

50 V

Maximum Reverse Current:

.1 uA

Reverse Test Voltage:

50 V

Sub-Category:

Other Diodes

Surface Mount:

YES

Technology:

POSITIVE-INTRINSIC-NEGATIVE

Terminal Form:

Terminal Position:

Trade Compliance

CPH5513 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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