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MMBV3401LT1

Onsemi

MMBV3401LT1 by Onsemi

MMBV3401LT1 by Onsemi is a PIN diode with a reverse test voltage of 20V and max power dissipation of 0.2W. It operates in the very high-frequency band, making it suitable for switching applications. This single-configured diode has a small outline package shape and is surface mountable with a terminal finish of Tin/Lead (Sn/Pb).

Median Price

$0.114

Lifecycle Status

Suppliers In-Stock

28

In-Stock Inventory

1k+

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Rochester

USA . 44,388 parts In-Stock

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$0.119

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$0.099

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$0.088

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$0.088

Verical

USA . 28,888 parts In-Stock

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Vyrian

USA . 2,097 parts In-Stock

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$0.088

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2,097

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Digiode

USA . 1,343 parts In-Stock

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Component Electronics Inc.

Canada . 2,300 parts In-Stock

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$0.620

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$0.460

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$0.400

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$0.620

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Connector Distribution Corp

USA . 13,999 parts In-Stock

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Right Parts Inc.

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Bristol Electronics

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PC Components Company LLC

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First Choice Components Inc.

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Electronics Depot

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J2 Sourcing AB

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Sea View Technologies

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Microfarads

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Classic Components Corporation

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ACDS - Activité Composants Distribution Service

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Semi Source

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Inventory MP

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Odintec Ltd.

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Component Sense

UK . 1,882 parts In-Stock

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Prism Electronics

USA . 1,648 parts In-Stock

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Mil-Aero Solutions, Inc.

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Manoshevitz Elec. Sales

Israel . 72 parts In-Stock

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Corohmni

South Africa . 458 parts In-Stock

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Corphita

USA . 1,715 parts In-Stock

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Component Stockers USA

USA . 52,219 parts In-Stock

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Continental Prestige Electronics

USA . 44,388 parts In-Stock

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Kepictronics

USA . 21,364 parts In-Stock

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Perfect Parts

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Problanco Electronics

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Kulean Microsystems

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Authorized Procurement Solutions

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QUARKTWIN TECHNOLOGY LTD

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Cyclops Electronics Ltd (Excess)

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S.R.D Solutions

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TANS Electronics

Latvia . 2,057 parts In-Stock

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Glotronic Ltd.

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SupplyDigital Components

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UHIMA Technologies

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Overview

Discover the superior quality and innovative technology of the MMBV3401LT1 PIN Diode by Onsemi. This cutting-edge product offers an array of advantages for switching applications in very high-frequency bands. With a compact design, high performance, and reliable operation, this diode is the perfect choice for customers looking to enhance their electronic systems. Trust Onsemi's expertise and elevate your projects with the exceptional value and benefits of the MMBV3401LT1. Upgrade your applications today and experience the difference!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and ensures that the product can withstand harsh environmental conditions.

Frequency Band: VERY HIGH FREQUENCY

Ideal for applications requiring high frequency signal switching or modulation.

Maximum Diode Capacitance: 1 pF

Low capacitance allows for fast switching speeds and minimal signal distortion.

Reverse Test Voltage: 20 V

Provides a margin of safety for reverse voltage protection.

Maximum Operating Temperature: 125 °C

Can operate in high temperature environments without compromising performance.

Application: SWITCHING

Designed specifically for switching applications, ensuring optimal performance in this use case.

Terminal Finish: Tin/Lead (Sn/Pb)

Provides good solderability and ensures reliable electrical connections.

Diode Type: PIN DIODE

PIN diodes are known for their fast response times and low signal distortion, making them ideal for high-frequency applications.

Technical Specifications

PIN Diodes MMBV3401LT1 attributes and parameters. Explore more PIN Diodes devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY

Application:

SWITCHING

Minimum Breakdown Voltage:

35 V

Config:

SINGLE

Maximum Diode Capacitance:

1 pF

Nominal Diode Capacitance:

1 pF

Diode Element Material:

SILICON

Maximum Diode Forward Resistance:

.7 ohm

Diode Resistive Test Current:

10 mA

Diode Resistive Test Frequency:

100 MHz

Diode Type:

Frequency Band:

VERY HIGH FREQUENCY

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

125 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Maximum Power Dissipation:

.2 W

Qualification:

Not Qualified

Reverse Test Voltage:

20 V

Sub-Category:

PIN Diodes

Surface Mount:

YES

Technology:

POSITIVE-INTRINSIC-NEGATIVE

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MMBV3401LT1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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