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MMBV3401LT3

Onsemi

MMBV3401LT3 by Onsemi

MMBV3401LT3 by Onsemi is a PIN diode with a max forward resistance of 0.7 ohm and breakdown voltage of 35 V, suitable for switching applications in very high frequency bands. It features a small outline package style, dual terminal position, and operates at up to 125 °C temperature with tin/lead finish.

Median Price

$0.119

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 580,000 parts In-Stock

1+ parts

-

100+ parts

$0.119

1k+ parts

$0.099

10k+ parts

$0.088

580,000

-

$0.119

$0.099

$0.088

DigiKey

USA . 580,000 parts In-Stock

1+ parts

-

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$0.150

580,000

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$0.150

Verical

USA . 220,000 parts In-Stock

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$0.110

220,000

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$0.110

Distributors (In-Stock)

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Vyrian

USA . 1,916 parts In-Stock

1+ parts

$0.079

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1,916

$0.079

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Digiode

USA . 945 parts In-Stock

1+ parts

$0.093

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945

$0.093

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Bristol Electronics

USA . 4,080 parts In-Stock

1+ parts

$0.450

100+ parts

$0.225

1k+ parts

$0.090

10k+ parts

$0.068

4,080

$0.450

$0.225

$0.090

$0.068

DigiKey Marketplace

USA . 580,000 parts In-Stock

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580,000

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Microfarads

USA . 3,856 parts In-Stock

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3,856

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Distributors (Availability)

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Corohmni

South Africa . 198 parts In-Stock

1+ parts

$0.079

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198

$0.079

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Corphita

USA . 1,134 parts In-Stock

1+ parts

$0.088

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1,134

$0.088

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Authorized Procurement Solutions

USA . 150,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 24,641 parts In-Stock

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TANS Electronics

Latvia . 7,739 parts In-Stock

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7,739

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Kulean Microsystems

USA . 6,114 parts In-Stock

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6,114

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Problanco Electronics

Mexico . 5,624 parts In-Stock

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SupplyDigital Components

Austria . 1,560 parts In-Stock

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UHIMA Technologies

Türkiye . 67 parts In-Stock

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Overview

Enhance your switching applications with the MMBV3401LT3 by Onsemi, a top-tier manufacturer known for quality and reliability. This PIN diode offers very high frequency performance, low diode capacitance, and minimal forward resistance, making it ideal for demanding electronic systems. With a small outline package and dual terminal position, this diode is easy to incorporate into your designs. Trust Onsemi to deliver cutting-edge technology that meets your needs for efficient and precise switching solutions. Elevate your projects with the MMBV3401LT3 and experience the difference in performance and value.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material of the package provides durability and protection for the diode, ensuring a longer lifespan.

Frequency Band: VERY HIGH FREQUENCY

This diode is designed to operate in very high-frequency applications, making it suitable for advanced electronic devices.

Surface Mount: YES

The surface mount capability allows for easy installation and integration into circuit boards, saving time and effort during assembly.

Application: SWITCHING

The diode is specifically designed for switching applications, offering fast response times and reliable performance when changing between different circuit states.

Maximum Time At Peak Reflow Temperature (s): 30

The short reflow time of 30 seconds helps prevent heat damage to the diode during soldering, ensuring optimal functionality.

Diode Type: PIN DIODE

The PIN diode design offers high-speed switching capabilities and low distortion, making it ideal for use in RF switches and attenuators.

Technical Specifications

PIN Diodes MMBV3401LT3 attributes and parameters. Explore more PIN Diodes devices from Onsemi

Specs

Application:

SWITCHING

Minimum Breakdown Voltage:

35 V

Config:

SINGLE

Maximum Diode Capacitance:

1 pF

Diode Element Material:

SILICON

Maximum Diode Forward Resistance:

.7 ohm

Diode Resistive Test Current:

10 mA

Diode Resistive Test Frequency:

100 MHz

Diode Type:

Frequency Band:

VERY HIGH FREQUENCY

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

125 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Qualification:

Not Qualified

Sub-Category:

PIN Diodes

Surface Mount:

YES

Technology:

POSITIVE-INTRINSIC-NEGATIVE

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MMBV3401LT3 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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