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BAR9002ELSE6327XTSA1

Infineon Technologies

BAR9002ELSE6327XTSA1 by Infineon Technologies

Infineon's BAR9002ELSE6327XTSA1 is a single PIN diode with 80V breakdown voltage, suitable for C band applications. With 2.3 ohm forward resistance and 0.35 pF capacitance, it operates b/w -55 to 125 °C. Ideal for switching purposes, this chip carrier diode has gold finish terminals and can handle up to 0.15W power dissipation.

Median Price

$0.061

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

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Arrow

USA . 1 parts In-Stock

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$0.025

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1

$0.025

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Rochester

USA . 30,000 parts In-Stock

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$0.058

100+ parts

$0.054

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$0.049

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30,000

$0.058

$0.054

$0.049

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Mouser Electronics

USA . 3,867 parts In-Stock

1+ parts

$0.160

100+ parts

$0.075

1k+ parts

$0.067

10k+ parts

$0.061

3,867

$0.160

$0.075

$0.067

$0.061

DigiKey

USA . 96,456 parts In-Stock

1+ parts

$0.200

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$0.102

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$0.084

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$0.081

96,456

$0.200

$0.102

$0.084

$0.081

Verical

USA . 30,000 parts In-Stock

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$0.061

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$0.061

Chip1Stop

Japan . 14,650 parts In-Stock

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$0.051

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$0.051

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$0.050

14,650

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$0.051

$0.051

$0.050

Farnell

UK . 11,365 parts In-Stock

1+ parts

-

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$0.066

1k+ parts

$0.063

10k+ parts

$0.062

11,365

-

$0.066

$0.063

$0.062

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 236 parts In-Stock

1+ parts

$0.050

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Nova Conductors

Japan . 100 parts In-Stock

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$0.105

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$0.105

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Vyrian

USA . 17,879 parts In-Stock

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VNN

France . 5,049 parts In-Stock

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Ampacity Inc.

Singapore . 17,738 parts In-Stock

1+ parts

$0.043

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Semicontronic

India . 17,642 parts In-Stock

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$0.043

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$0.042

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$0.042

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17,642

$0.043

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Corphita

USA . 236 parts In-Stock

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$0.048

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$0.048

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Aranea Global

USA . 100 parts In-Stock

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$0.103

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$0.099

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$0.103

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Argo Parts USA

USA . 440 parts In-Stock

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$0.105

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$0.102

440

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$0.102

Aztec Data Supply Inc.

USA . 1,098 parts In-Stock

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$0.110

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Corohmni

South Africa . 224 parts In-Stock

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$0.114

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Modulus Dynamics

Lithuania . 19,745 parts In-Stock

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$0.127

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$0.122

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$0.117

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19,745

$0.127

$0.122

$0.117

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Continental Prestige Electronics

USA . 18,285 parts In-Stock

1+ parts

$0.302

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$0.106

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$0.065

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18,285

$0.302

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$0.065

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Microchip USA

USA . 1,715 parts In-Stock

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$0.436

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Epart123

USA . 90,000 parts In-Stock

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GreenTree Electronics

Israel . 12,700 parts In-Stock

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Authorized Procurement Solutions

USA . 2,500 parts In-Stock

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Advanced Electronics

New Zealand . 200 parts In-Stock

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Perfect Parts

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Overview

Discover the cutting-edge BAR9002ELSE6327XTSA1 by Infineon Technologies, a top-tier manufacturer of high-quality PIN diodes. Ideal for switching applications in the C band frequency range, this single-configured diode offers unparalleled performance and reliability. With a wide operating temperature range and superior resistance, this chip carrier-style diode is designed to meet the demands of even the most critical applications. Experience the value and benefits of Infineon's advanced technology with the BAR9002ELSE6327XTSA1.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diode, ensuring a longer lifespan.

Frequency Band: C BAND

Suitable for high-frequency applications in the C band, making it versatile for a range of uses.

Surface Mount: YES

Allows for easy and convenient installation on circuit boards.

Maximum Operating Temperature: 125 °C

Can withstand high temperatures without compromising performance.

Minimum Operating Temperature: -55 °C

Operates effectively in cold temperatures as well, making it suitable for various environments.

Maximum Diode Forward Resistance: 2.3 ohm

Low forward resistance ensures efficient current flow through the diode.

Nominal Diode Capacitance: 0.35 pF

Low capacitance allows for fast switching speeds and improved signal integrity.

Minimum Breakdown Voltage: 80 V

High breakdown voltage ensures reliability and protection against voltage spikes.

Technical Specifications

PIN Diodes BAR9002ELSE6327XTSA1 attributes and parameters. Explore more PIN Diodes devices from Infineon Technologies

Specs

Additional Features:

HIGH VOLTAGE

Application:

SWITCHING

Minimum Breakdown Voltage:

80 V

Config:

SINGLE

Nominal Diode Capacitance:

.35 pF

Diode Element Material:

SILICON

Maximum Diode Forward Resistance:

2.3 ohm

Diode Resistive Test Current:

3 mA

Diode Resistive Test Frequency:

100 MHz

Diode Type:

Frequency Band:

C BAND

JESD-30 Code:

R-PBCC-N2

JESD-609 Code:

e4

Nominal Minority Carrier Lifetime:

.75 us

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CHIP CARRIER

Maximum Power Dissipation:

.15 W

Reverse Test Voltage:

0 V

Surface Mount:

YES

Technology:

POSITIVE-INTRINSIC-NEGATIVE

Terminal Finish:

GOLD

Terminal Form:

Terminal Position:

Trade Compliance

BAR9002ELSE6327XTSA1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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