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NSP301MX3T5G

Onsemi

NSP301MX3T5G by Onsemi

NSP301MX3T5G by Onsemi is a single PIN diode with high frequency band, suitable for applications like attenuators and switching. It features a max diode capacitance of 0.23 pF, reverse test voltage of 50 V, and max operating temperature of 125 °C.

Median Price

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Lifecycle Status

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2

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1k+

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Digiode

USA . 1,059 parts In-Stock

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Vyrian

USA . 416 parts In-Stock

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TANS Electronics

Latvia . 2,983 parts In-Stock

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Corphita

USA . 2,329 parts In-Stock

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SupplyDigital Components

Austria . 817 parts In-Stock

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Kulean Microsystems

USA . 722 parts In-Stock

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Corohmni

South Africa . 488 parts In-Stock

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UHIMA Technologies

Türkiye . 197 parts In-Stock

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Problanco Electronics

Mexico . 191 parts In-Stock

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Overview

Experience the superior quality and reliability of the NSP301MX3T5G by Onsemi, a leading manufacturer in the industry. This PIN Diode offers high-frequency performance for applications such as attenuators and switching, providing unmatched value to customers seeking precision and efficiency. With a maximum diode capacitance of 0.23 pF and a reverse test voltage of 50 V, this chip carrier package ensures optimal performance in a compact and convenient design. Trust Onsemi to deliver cutting-edge technology that meets your needs with excellence.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides durability and protection for the diode, ensuring a longer lifespan.

Frequency Band: HIGH FREQUENCY

Ideal for high-frequency applications, making it suitable for use in various electronic devices.

Maximum Diode Capacitance: 0.23 pF

Low diode capacitance ensures fast switching speeds and high frequency operation.

Reverse Test Voltage: 50 V

With a high reverse test voltage, the diode can handle higher voltage levels without breakdown.

Package Style (Meter): CHIP CARRIER

Chip carrier package style allows for easy surface mount installation and space-saving design.

Application: ATTENUATOR; SWITCHING

Suitable for attenuator and switching applications, providing versatility and functionality.

Maximum Operating Temperature: 125 °C

Can operate at high temperatures without compromising performance, ensuring reliable functionality.

Minimum Operating Temperature: -55 °C

Can operate in low-temperature environments, making it suitable for a wide range of applications.

Maximum Diode Forward Resistance: 2 ohm

Low forward resistance ensures efficient power handling and minimal signal loss.

Diode Element Material: SILICON

Silicon diode element material provides high performance and reliability in various electronic devices.

Technical Specifications

PIN Diodes NSP301MX3T5G attributes and parameters. Explore more PIN Diodes devices from Onsemi

Specs

Application:

ATTENUATOR; SWITCHING

Minimum Breakdown Voltage:

50 V

Config:

SINGLE

Maximum Diode Capacitance:

.23 pF

Nominal Diode Capacitance:

.23 pF

Diode Element Material:

SILICON

Maximum Diode Forward Resistance:

2 ohm

Diode Resistive Test Frequency:

1 MHz

Diode Type:

Frequency Band:

HIGH FREQUENCY

JESD-30 Code:

R-PBCC-N2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

NOT SPECIFIED

Reverse Test Voltage:

50 V

Surface Mount:

YES

Technology:

POSITIVE-INTRINSIC-NEGATIVE

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

NSP301MX3T5G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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