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BF245CRL1

Onsemi

BF245CRL1 by Onsemi

BF245CRL1 by Onsemi is an N-CHANNEL RF FET with 30V DS Breakdown Voltage. Ideal for AMPLIFIER applications in ULTRA HIGH FREQUENCY BAND, it has a max ID of 0.1A and operates in DEPLETION MODE. Package: PLASTIC/EPOXY, Shape: ROUND, Terminals: 3.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 2,493 parts In-Stock

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Digiode

USA . 2,024 parts In-Stock

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Native Components

USA . 465 parts In-Stock

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$6.665

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SupplyDigital Components

Austria . 6,375 parts In-Stock

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Kulean Microsystems

USA . 3,779 parts In-Stock

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TANS Electronics

Latvia . 3,493 parts In-Stock

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Problanco Electronics

Mexico . 1,932 parts In-Stock

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Northwest PG Solutions

USA . 602 parts In-Stock

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Corphita

USA . 601 parts In-Stock

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UHIMA Technologies

Türkiye . 240 parts In-Stock

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Corohmni

South Africa . 75 parts In-Stock

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Overview

Upgrade your RF amplifier designs with the BF245CRL1 by Onsemi. Crafted with precision and expertise, this N-CHANNEL FET offers unparalleled performance in the ultra-high frequency band. Its single configuration and depletion mode operation make it ideal for a wide range of applications, from amplifiers to signal processing. Trust in Onsemi's reputation for quality and innovation, and experience the value and benefits that the BF245CRL1 brings to your projects. Elevate your RF circuits to new heights with this high-quality transistor.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection to the transistor, ensuring long-lasting performance.

Polarity or Channel Type: N-CHANNEL

N-Channel FETs are known for their high input impedance and fast switching speed, making them ideal for amplifier applications.

Configuration: SINGLE

Single configuration simplifies circuit design and reduces complexity.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance in amplification tasks.

Minimum DS Breakdown Voltage: 30 V

With a minimum breakdown voltage of 30V, this transistor can handle higher voltages without damage.

Package Shape: ROUND

Round shape allows for easy mounting and compact design in circuits.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections and easy soldering onto circuit boards.

Operating Mode: DEPLETION MODE

Depletion mode transistors require less external components for biasing and offer high input impedance.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Designed for ultra high frequency applications, ensuring reliable performance in high-frequency circuits.

No. of Terminals: 3

The 3 terminals provide the necessary connections for proper operation in amplifier circuits.

Package Style (Meter): CYLINDRICAL

Cylindrical package style allows for easy handling and integration into circuits.

Field Effect Transistor Technology: JUNCTION

Junction FET technology offers high input impedance and low noise performance, ideal for amplifier applications.

Transistor Element Material: SILICON

Silicon transistors are known for their high efficiency and reliability in electronic circuits.

Terminal Finish: TIN LEAD

Tin-lead finish on terminals ensures good solderability and electrical connections.

Maximum Drain Current (ID): 0.1 A

With a maximum drain current of 0.1A, this transistor can handle moderate current loads for amplification.

Terminal Position: BOTTOM

Bottom terminal position makes it easier to mount the transistor securely on circuit boards.

Technical Specifications

RF Small Signal Field Effect Transistors (FET) BF245CRL1 attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Additional Features:

EUROPEAN PART NUMBER

Configuration:

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (ID):

.1 A

Field Effect Transistor Technology:

JUNCTION

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

BF245CRL1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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