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ATF-54143-TR2G

Broadcom

ATF-54143-TR2G by Broadcom

Broadcom's ATF-54143-TR2G is an N-channel RF FET with 15 dB power gain, ideal for amplifier applications in C band. It features a 5V DS breakdown voltage, 0.12A drain current, and operates in enhancement mode. The transistor has a small outline package with gull wing terminals and can handle up to 0.725W power dissipation at 150°C.

Median Price

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Vyrian

USA . 1,548 parts In-Stock

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Digiode

USA . 448 parts In-Stock

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448

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Nova Conductors

Japan . 69 parts In-Stock

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69

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Advanced Electronics

New Zealand . 350 parts In-Stock

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$0.811

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$0.738

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$0.665

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350

$0.811

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Aztec Data Supply Inc.

USA . 1,761 parts In-Stock

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$1.480

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Corohmni

South Africa . 455 parts In-Stock

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$1.935

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Decca Corp

Germany . 1,280 parts In-Stock

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$9.000

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$8.820

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$8.732

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AZTECH Wire

Italy . 366 parts In-Stock

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$10.670

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Continental Prestige Electronics

USA . 5,326 parts In-Stock

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Argo Parts USA

USA . 4,980 parts In-Stock

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Glotronic Ltd.

UK . 3,700 parts In-Stock

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Supply Digital

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Bastille Electronics

Australia . 300 parts In-Stock

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Corphita

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Microchip USA

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Overview

Experience superior performance and reliability with the ATF-54143-TR2G by Broadcom. As a leading manufacturer in the RF Small Signal Field Effect Transistors (FET) category, Broadcom delivers high-quality products that excel in applications like amplifiers. Offering a minimum power gain of 15 dB and a maximum drain current of 0.12 A, this N-channel transistor in a rectangular package shape provides enhanced functionality and efficiency. Trust Broadcom for cutting-edge technology and unmatched value in every product. Elevate your projects with the ATF-54143-TR2G for optimal performance and results.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable for easy handling and long-lasting performance.

Polarity or Channel Type: N-CHANNEL

N-channel FETs typically offer better performance and efficiency compared to P-channel FETs, making this product a good choice for various applications.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance and signal amplification capabilities.

Surface Mount: YES

Surface mount technology allows for easier and more efficient PCB assembly, making this product suitable for automated manufacturing processes.

Minimum DS Breakdown Voltage: 5 V

The minimum breakdown voltage of 5V ensures reliable operation and protection against voltage spikes.

Minimum Power Gain (Gp): 15 dB

A minimum power gain of 15 dB indicates strong amplification capability, making this product suitable for applications requiring signal amplification.

Package Shape: RECTANGULAR

Rectangular package shape allows for easy integration into circuit designs and PCB layouts.

Field Effect Transistor Technology: HIGH ELECTRON MOBILITY

High electron mobility technology offers high-speed performance and low power consumption, making this product ideal for high-frequency applications.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this product can withstand high-temperature environments and ensure reliable performance.

Transistor Element Material: GALLIUM ARSENIDE

The use of gallium arsenide as the transistor element material provides high electron mobility and superior performance characteristics.

Technical Specifications

RF Small Signal Field Effect Transistors (FET) ATF-54143-TR2G attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from Broadcom

Specs

Case Connection:

SOURCE

Configuration:

Minimum DS Breakdown Voltage:

5 V

Maximum Drain Current (Abs) (ID):

.12 A

Maximum Drain Current (ID):

.12 A

Field Effect Transistor Technology:

HIGH ELECTRON MOBILITY

Highest Frequency Band:

C BAND

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation Ambient:

.725 W

Minimum Power Gain (Gp):

15 dB

Qualification:

Not Qualified

Sub-Category:

FET RF Small Signal

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

20

Transistor Application:

AMPLIFIER

Transistor Element Material:

GALLIUM ARSENIDE

Trade Compliance

ATF-54143-TR2G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.75

SB

8541.21.00.80

Manufacturer Highlights

Broadcom

Broadcom Inc, a Delaware corporation headquartered in San Jose, CA, is a global technology leader that designs, develops and supplies a broad range of semiconductor and infrastructure software solutions. Broadcom’s category-leading product portfolio serves critical markets including data center, networking, software, broadband, wireless, storage and industrial. Our solutions include data center networking and storage, enterprise and mainframe software focused on automation, monitoring and security, smartphone components, telecoms and factory automation.

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