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ATF-521P8-BLK

Broadcom

ATF-521P8-BLK by Broadcom

Broadcom ATF-521P8-BLK is an N-channel FET with 15.5 dB power gain, ideal for amplifier applications in L Band frequencies. With a max drain current of 0.5 A and operating temperature up to 150°C, it offers high electron mobility technology in a small outline package.

Median Price

$2.819

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

< 1k

Distributors (In-Stock)

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Nova Conductors

Japan . 45 parts In-Stock

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$2.819

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Vyrian

USA . 202 parts In-Stock

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Digiode

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Cogito LLC

Ukraine . 66 parts In-Stock

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Cyclops Electronics Ltd

UK . 50 parts In-Stock

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Distributors (Availability)

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Advanced Electronics

New Zealand . 100 parts In-Stock

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$0.392

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$0.357

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$0.321

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100

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Corohmni

South Africa . 235 parts In-Stock

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$1.063

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Aztec Data Supply Inc.

USA . 4,444 parts In-Stock

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$1.400

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Bastille Electronics

Australia . 15 parts In-Stock

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$2.819

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$2.678

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$2.544

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$2.509

15

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$2.509

Continental Prestige Electronics

USA . 5,503 parts In-Stock

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$2.819

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$2.763

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Argo Parts USA

USA . 3,409 parts In-Stock

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AZTECH Wire

Italy . 610 parts In-Stock

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$7.346

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Decca Corp

Germany . 1,069 parts In-Stock

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$13.000

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$12.740

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$12.613

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QUARKTWIN TECHNOLOGY LTD

USA . 7,594 parts In-Stock

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Supply Digital

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Perfect Parts

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Assy Fe

Spain . 1,200 parts In-Stock

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Microchip USA

USA . 391 parts In-Stock

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Corphita

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Overview

Experience superior performance with the ATF-521P8-BLK by Broadcom, a top-quality RF Small Signal Field Effect Transistor perfect for amplifier applications. With Broadcom's reputation for excellence in electronic components, this N-CHANNEL transistor offers enhanced power gain and operates in the L BAND frequency range. Its compact design and high electron mobility technology make it ideal for various electronics projects. Unlock the potential of your circuits with the ATF-521P8-BLK and elevate your creations to new heights of efficiency and reliability.

Feature Benefit Bullets

Package Body Material:

PLASTIC/EPOXY - The use of plastic/epoxy material makes this product lightweight and durable, ideal for applications where weight and durability are important factors.

Polarity or Channel Type:

N-CHANNEL - N-channel transistors are known for their high efficiency and low on-resistance, making this product suitable for high-performance applications.

Configuration:

SINGLE - The single configuration simplifies the design and assembly process, making this product easy to integrate into circuits.

Transistor Application:

AMPLIFIER - Designed for amplifier applications, this transistor provides high power gain and low noise performance.

Surface Mount:

YES - With surface mount capabilities, this product can be easily mounted on PCBs, saving space and reducing assembly time.

Minimum DS Breakdown Voltage:

7 V - The minimum breakdown voltage of 7V ensures reliable operation under high voltage conditions, increasing the product's overall durability.

Minimum Power Gain (Gp):

15.5 dB - The high power gain of 15.5 dB results in improved signal amplification and performance.

Package Shape:

SQUARE - The square package shape offers a compact design, making it suitable for applications where space is limited.

Terminal Form:

NO LEAD - The no lead terminal form simplifies the soldering process, making it easier to assemble this product onto PCBs.

Operating Mode:

ENHANCEMENT MODE - The enhancement mode operation allows for better control over the transistor's electrical characteristics, enhancing overall performance.

Highest Frequency Band:

L BAND - Designed for use in the L band frequency range, this product is ideal for applications requiring high-frequency operation.

Maximum Drain Current (Abs) (ID):

0.5 A - With a maximum drain current of 0.5A, this transistor can handle high current loads, making it suitable for power amplification applications.

No. of Terminals:

8 - The 8 terminal design offers flexibility in circuit configuration and connectivity options.

Package Style (Meter):

SMALL OUTLINE - The small outline package style saves space and allows for easy integration into compact electronic devices.

Field Effect Transistor Technology:

HIGH ELECTRON MOBILITY - The high electron mobility technology improves the transistor's performance, making it suitable for high-speed applications.

Maximum Power Dissipation Ambient:

1.5 W - With a maximum power dissipation of 1.5W, this transistor can handle high power levels without overheating.

Maximum Operating Temperature:

150 °C - The high maximum operating temperature of 150°C ensures reliable performance in harsh environments.

Transistor Element Material:

SILICON - The use of silicon as the transistor element material provides excellent electrical properties and reliability.

Terminal Finish:

MATTE TIN - The matte tin terminal finish offers excellent solderability and corrosion resistance.

Maximum Drain Current (ID):

0.5 A - The maximum drain current of 0.5A allows for high current handling capacity, making this transistor suitable for power applications.

Terminal Position:

DUAL - The dual terminal position provides flexibility in mounting orientation, allowing for easy integration into different circuit layouts.

Case Connection:

SOURCE - The case connection at the source terminal provides a stable ground reference, ensuring reliable operation.

Peak Reflow Temperature °C:

260 - The high peak reflow temperature of 260°C allows for reliable soldering during assembly.

Technical Specifications

RF Small Signal Field Effect Transistors (FET) ATF-521P8-BLK attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from Broadcom

Specs

Additional Features:

LOW NOISE

Case Connection:

SOURCE

Configuration:

Minimum DS Breakdown Voltage:

7 V

Maximum Drain Current (Abs) (ID):

.5 A

Maximum Drain Current (ID):

.5 A

Field Effect Transistor Technology:

HIGH ELECTRON MOBILITY

Highest Frequency Band:

L BAND

JEDEC-95 Code:

MO-229

JESD-30 Code:

S-PDSO-N8

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

SQUARE

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation Ambient:

1.5 W

Minimum Power Gain (Gp):

15.5 dB

Qualification:

Not Qualified

Sub-Category:

FET RF Small Signal

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

NO LEAD

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

ATF-521P8-BLK Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

Manufacturer Highlights

Broadcom

Broadcom Inc, a Delaware corporation headquartered in San Jose, CA, is a global technology leader that designs, develops and supplies a broad range of semiconductor and infrastructure software solutions. Broadcom’s category-leading product portfolio serves critical markets including data center, networking, software, broadband, wireless, storage and industrial. Our solutions include data center networking and storage, enterprise and mainframe software focused on automation, monitoring and security, smartphone components, telecoms and factory automation.

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