Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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Broadcom ATF-521P8-BLK is an N-channel FET with 15.5 dB power gain, ideal for amplifier applications in L Band frequencies. With a max drain current of 0.5 A and operating temperature up to 150°C, it offers high electron mobility technology in a small outline package.
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PLASTIC/EPOXY - The use of plastic/epoxy material makes this product lightweight and durable, ideal for applications where weight and durability are important factors.
N-CHANNEL - N-channel transistors are known for their high efficiency and low on-resistance, making this product suitable for high-performance applications.
SINGLE - The single configuration simplifies the design and assembly process, making this product easy to integrate into circuits.
AMPLIFIER - Designed for amplifier applications, this transistor provides high power gain and low noise performance.
YES - With surface mount capabilities, this product can be easily mounted on PCBs, saving space and reducing assembly time.
7 V - The minimum breakdown voltage of 7V ensures reliable operation under high voltage conditions, increasing the product's overall durability.
15.5 dB - The high power gain of 15.5 dB results in improved signal amplification and performance.
SQUARE - The square package shape offers a compact design, making it suitable for applications where space is limited.
NO LEAD - The no lead terminal form simplifies the soldering process, making it easier to assemble this product onto PCBs.
ENHANCEMENT MODE - The enhancement mode operation allows for better control over the transistor's electrical characteristics, enhancing overall performance.
L BAND - Designed for use in the L band frequency range, this product is ideal for applications requiring high-frequency operation.
0.5 A - With a maximum drain current of 0.5A, this transistor can handle high current loads, making it suitable for power amplification applications.
8 - The 8 terminal design offers flexibility in circuit configuration and connectivity options.
SMALL OUTLINE - The small outline package style saves space and allows for easy integration into compact electronic devices.
HIGH ELECTRON MOBILITY - The high electron mobility technology improves the transistor's performance, making it suitable for high-speed applications.
1.5 W - With a maximum power dissipation of 1.5W, this transistor can handle high power levels without overheating.
150 °C - The high maximum operating temperature of 150°C ensures reliable performance in harsh environments.
SILICON - The use of silicon as the transistor element material provides excellent electrical properties and reliability.
MATTE TIN - The matte tin terminal finish offers excellent solderability and corrosion resistance.
0.5 A - The maximum drain current of 0.5A allows for high current handling capacity, making this transistor suitable for power applications.
DUAL - The dual terminal position provides flexibility in mounting orientation, allowing for easy integration into different circuit layouts.
SOURCE - The case connection at the source terminal provides a stable ground reference, ensuring reliable operation.
260 - The high peak reflow temperature of 260°C allows for reliable soldering during assembly.
RF Small Signal Field Effect Transistors (FET) ATF-521P8-BLK attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from Broadcom
Additional Features:
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Maximum Drain Current (Abs) (ID):
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Highest Frequency Band:
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JESD-609 Code:
Moisture Sensitivity Level (MSL):
No. of Elements:
No. of Terminals:
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Package Style (Meter):
Peak Reflow Temperature (C):
Polarity or Channel Type:
Maximum Power Dissipation Ambient:
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ATF-521P8-BLK Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
HTS
8541.29.00.75
SB
8541.29.00.80
Broadcom Inc, a Delaware corporation headquartered in San Jose, CA, is a global technology leader that designs, develops and supplies a broad range of semiconductor and infrastructure software solutions. Broadcom’s category-leading product portfolio serves critical markets including data center, networking, software, broadband, wireless, storage and industrial. Our solutions include data center networking and storage, enterprise and mainframe software focused on automation, monitoring and security, smartphone components, telecoms and factory automation.
2N2222A
Ksl Microdevices
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
BAV99
Gec Plessey Semiconductors
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
1N4148WT
Taitron Components
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
SS14
Rfe International
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Won-top Electronics
L78L05ABZ-AP
STMicroelectronics
L78L05ABZ-AP by STMicroelectronics is a BIPOLAR fixed positive single output standard regulator with an operating temperature range of -40 to 125°C. It has a nominal output voltage of 5V, max load regulation of 0.06%, and can handle a max output current of 0.07A. Ideal for applications requiring stable voltage regulation in various electronic devices.
1N4148
General Semiconductor
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
LM358N
Taejin Technology
OPERATIONAL AMPLIFIER; Temperature Grade: AUTOMOTIVE; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
Continental Device India
SSL-LXA228SRC-TR11
Lumex
SSL-LXA228SRC-TR11 by Lumex is a 1.9mm SINGLE COLOR LED with peak wavelength of 660nm and max forward current of 0.03A. Ideal for applications requiring SUPER RED light emission, such as indicator lights in electronic devices due to its clear lens and surface mounting feature.
DS18B20Z/T&R
Maxim Integrated
DS18B20Z/T&R by Maxim Integrated is a 12-bit digital temperature sensor with a max supply voltage of 5.5V and an accuracy of 0.50°C. It features a 1-Wire interface, operates b/w -55°C to 125°C, and is ideal for applications requiring precise temperature monitoring in compact spaces.
Dionics-usa
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
FDV304P
Fairchild Semiconductor
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Moisture Sensitivity Level (MSL): 1; Maximum Drain Current (ID): .46 A;
M39029/58-360
TE Connectivity
TE Connectivity's M39029/58-360 is a CRIMP terminal backshell for 22-28 AWG wires, rated at 5A. Ideal for male contacts in Mil-Spec applications, it offers a cross-section area of 0.34 mm2 and ensures secure connections in demanding environments.
LAN8720A-CP-TR
Standard Microsystems
ETHERNET TRANSCEIVER; Temperature Grade: OTHER; Terminal Form: NO LEAD; No. of Terminals: 24; Package Code: HVQCCN; Package Shape: SQUARE;
BSS84-7-F
Diodes Incorporated
Diodes Inc. BSS84-7-F is a P-channel FET with 50V DS breakdown voltage, 0.13A max drain current, and 10 ohm RDS(on). Ideal for switching applications, it features a single configuration with built-in diode in a small outline package. Operating in enhancement mode at up to 150°C, it has Gull Wing terminals and matte tin finish.
Forward International Electronics
RECTIFIER DIODE; Surface Mount: YES; Maximum Operating Temperature: 150 Cel; No. of Elements: 1; No. of Phases: 1; Maximum Output Current: 1 A;
CL31B104KBCNNNC
Samsung Electro-mechanics
Samsung Electro-mechanics CL31B104KBCNNNC is a ceramic capacitor with 0.1uF capacitance and 50V rated DC voltage. It features X7R temperature characteristics, -55 to 125 °C operating range, and compact SMT package style. Ideal for applications requiring high reliability in compact electronic devices.
ULN2803A
Allegro MicroSystems
NPN; Configuration: 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): .5 A; Maximum Operating Temperature: 85 Cel; Terminal Form: THROUGH-HOLE;
National Semiconductor
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
BF901T/R
NXP Semiconductors
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 1; Terminal Position: DUAL; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
MMBF4416
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Transistor Application: AMPLIFIER; Maximum Operating Temperature: 150 Cel;
BF997-T
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Terminals: 4; Transistor Element Material: SILICON; Maximum Operating Temperature: 150 Cel;
BF545A-T
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Field Effect Transistor Technology: JUNCTION; Terminal Position: DUAL; Transistor Element Material: SILICON;
BF545ATRL
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Application: AMPLIFIER; Qualification: Not Qualified; Terminal Form: GULL WING;
SAV-541+
Mini-circuits
Mini-circuits SAV-541+ is a single N-channel RF FET with 15 dB min power gain, ideal for amplifier applications. Operating in enhancement mode, it offers high electron mobility technology and can handle up to 0.12 A drain current. With a max power dissipation of 0.36 W and operating temperature of 85°C, this transistor is suitable for C band frequencies.
ATF-54143-TR2G
Broadcom
Broadcom's ATF-54143-TR2G is an N-channel RF FET with 15 dB power gain, ideal for amplifier applications in C band. It features a 5V DS breakdown voltage, 0.12A drain current, and operates in enhancement mode. The transistor has a small outline package with gull wing terminals and can handle up to 0.725W power dissipation at 150°C.
NE3515S02-T1D-A
Nec Electronics America
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Minimum Power Gain (Gp): 11 dB; Highest Frequency Band: KU BAND; Field Effect Transistor Technology: HETERO-JUNCTION;
BF994SA-GS08
Vishay Telefunken
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Feedback Capacitance (Crss): .035 pF; Minimum DS Breakdown Voltage: 20 V; Terminal Form: GULL WING;
BF245ARL
Onsemi
BF245ARL by Onsemi is an N-CHANNEL RF FET with 30V DS breakdown voltage. Ideal for AMPLIFIER applications in ULTRA HIGH FREQUENCY BAND, it has a max ID of 0.1A and operates in DEPLETION MODE. Package: PLASTIC/EPOXY, Shape: ROUND, Terminals: 3.
BF988
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Body Material: PLASTIC/EPOXY;
2N4222A
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Package Shape: ROUND; Case Connection: SHIELD; Maximum Feedback Capacitance (Crss): 2 pF;
BF997-TAPE-13
BF997-TAPE-13 by NXP Semiconductors is an N-channel RF FET designed for amplifier applications. It features a dual gate, depletion mode operation with a max DS breakdown voltage of 20V and operates in the ultra-high frequency band. This surface-mount transistor ensures reliable performance up to 150 °C.
BF901-TAPE-13
BF901-TAPE-13 by NXP Semiconductors is an N-channel RF FET designed for amplifier applications. It features a 12V min DS breakdown voltage, operates in the ultra-high frequency band, and supports dual gate enhancement mode. This compact surface mount device ensures reliable performance up to 150 °C.
STD6N10L-1
STD6N10L-1 by STMicroelectronics is an N-channel RF FET with a 100V DS breakdown voltage and 6A max drain current. It is used for switching applications, operates in enhancement mode, and has a max power dissipation of 35W. This transistor features a built-in diode, metal-oxide semiconductor technology, and can withstand temperatures up to 175 °C.
BF998R-T
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Additional Features: LOW NOISE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Agilent Technologies
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Form: GULL WING; Case Connection: SOURCE; Highest Frequency Band: C BAND;
BF990A
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: DUAL GATE, DEPLETION MODE; Maximum Drain Current (ID): .03 A; Transistor Element Material: SILICON;
3SK167-2
3SK167-2 by Onsemi is an N-CHANNEL RF FET with max drain current of 0.055A and power dissipation of 0.2W. Ideal for applications requiring small signal amplification in high-frequency circuits up to 125 °C ambient temperature.
J309
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; JESD-30 Code: O-PBCY-T3; No. of Terminals: 3; Additional Features: LOW NOISE;
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ATF-55143-TR1G
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Terminal Form: GULL WING; Maximum Operating Temperature: 150 Cel;
ATF-55143-TR1G by Broadcom is an N-channel RF FET with 15.5 dB power gain, ideal for amplifier applications in C band frequencies. It features a max drain current of 0.1 A, operating at up to 150°C with a power dissipation of 0.27 W in a small outline package suitable for surface mount assembly.
ATF-50189-BLK
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Qualification: Not Qualified; Transistor Element Material: SILICON; Maximum Drain Current (ID): 1 A;
ATF-54143-TR1G
Broadcom's ATF-54143-TR1G is an N-channel RF FET with 5V DS breakdown voltage and 15dB power gain, ideal for amplifier applications in C band. It features a small outline package, Gull Wing terminals, and operates in enhancement mode with high electron mobility technology. With a max power dissipation of 0.725W and operating temperature of 150°C, it offers reliable performance for various RF signal amplification needs.
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Form: GULL WING; Maximum Power Dissipation Ambient: .725 W; Moisture Sensitivity Level (MSL): 1;
ATF-54143-BLKG
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Application: AMPLIFIER; Package Shape: RECTANGULAR; Qualification: Not Qualified;
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation Ambient: .725 W; Transistor Element Material: GALLIUM ARSENIDE; Case Connection: SOURCE;
ATF-54143-TR1
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Drain Current (Abs) (ID): .12 A; No. of Elements: 1; Minimum Power Gain (Gp): 15 dB;
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Application: AMPLIFIER; Highest Frequency Band: C BAND; Qualification: Not Qualified;
ATF-531P8-BLK
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Minimum DS Breakdown Voltage: 7 V; Transistor Element Material: SILICON;
ATF-531P8-BLK by Broadcom is an N-channel RF FET transistor with a min DS breakdown voltage of 7V. It has a power gain of 18.5 dB and is commonly used as an amplifier in C band applications.
ATF-55143-BLKG
Broadcom's ATF-55143-BLKG is an N-channel RF FET with 15.5 dB power gain, ideal for amplifier applications in C band frequencies. It features a 5V DS breakdown voltage, 0.1A drain current, and operates at up to 150°C with a max power dissipation of 0.27W.
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Field Effect Transistor Technology: HIGH ELECTRON MOBILITY; Operating Mode: ENHANCEMENT MODE; JESD-30 Code: R-PDSO-G4;
ATF-55143
ATF-55143 by Broadcom is a N-CHANNEL RF FET used for amplification in C BAND applications. It has a min DS breakdown voltage of 5V and a power gain of 15.5 dB. This surface mount transistor operates in enhancement mode with a max drain current of 0.1A.
ATF-55143-TR1
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; JESD-609 Code: e0; Minimum Power Gain (Gp): 15.5 dB; Highest Frequency Band: C BAND;
Broadcom's ATF-55143-TR1 is an N-channel RF FET with 15.5 dB power gain, ideal for amplifier applications in C band frequencies. It features a 5V DS breakdown voltage, 0.1A drain current, and operates in enhancement mode. The transistor has a small outline package with gull wing terminals and can handle up to 0.27W power dissipation at 150°C ambient temperature.
ATF-521P8-BLK
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Moisture Sensitivity Level (MSL): 1; Highest Frequency Band: C BAND; JESD-30 Code: S-PDSO-N8;
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Moisture Sensitivity Level (MSL): 1; JESD-609 Code: e3; Minimum Power Gain (Gp): 15 dB;
ATF-521P8-TR2G
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Minimum DS Breakdown Voltage: 7 V; Package Body Material: PLASTIC/EPOXY; Qualification: Not Qualified;
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