Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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Broadcom ATF-521P8-BLK is an N-channel FET with 15.5 dB power gain, ideal for amplifier applications in L Band frequencies. With a max drain current of 0.5 A and operating temperature up to 150°C, it offers high electron mobility technology in a small outline package.
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PLASTIC/EPOXY - The use of plastic/epoxy material makes this product lightweight and durable, ideal for applications where weight and durability are important factors.
N-CHANNEL - N-channel transistors are known for their high efficiency and low on-resistance, making this product suitable for high-performance applications.
SINGLE - The single configuration simplifies the design and assembly process, making this product easy to integrate into circuits.
AMPLIFIER - Designed for amplifier applications, this transistor provides high power gain and low noise performance.
YES - With surface mount capabilities, this product can be easily mounted on PCBs, saving space and reducing assembly time.
7 V - The minimum breakdown voltage of 7V ensures reliable operation under high voltage conditions, increasing the product's overall durability.
15.5 dB - The high power gain of 15.5 dB results in improved signal amplification and performance.
SQUARE - The square package shape offers a compact design, making it suitable for applications where space is limited.
NO LEAD - The no lead terminal form simplifies the soldering process, making it easier to assemble this product onto PCBs.
ENHANCEMENT MODE - The enhancement mode operation allows for better control over the transistor's electrical characteristics, enhancing overall performance.
L BAND - Designed for use in the L band frequency range, this product is ideal for applications requiring high-frequency operation.
0.5 A - With a maximum drain current of 0.5A, this transistor can handle high current loads, making it suitable for power amplification applications.
8 - The 8 terminal design offers flexibility in circuit configuration and connectivity options.
SMALL OUTLINE - The small outline package style saves space and allows for easy integration into compact electronic devices.
HIGH ELECTRON MOBILITY - The high electron mobility technology improves the transistor's performance, making it suitable for high-speed applications.
1.5 W - With a maximum power dissipation of 1.5W, this transistor can handle high power levels without overheating.
150 °C - The high maximum operating temperature of 150°C ensures reliable performance in harsh environments.
SILICON - The use of silicon as the transistor element material provides excellent electrical properties and reliability.
MATTE TIN - The matte tin terminal finish offers excellent solderability and corrosion resistance.
0.5 A - The maximum drain current of 0.5A allows for high current handling capacity, making this transistor suitable for power applications.
DUAL - The dual terminal position provides flexibility in mounting orientation, allowing for easy integration into different circuit layouts.
SOURCE - The case connection at the source terminal provides a stable ground reference, ensuring reliable operation.
260 - The high peak reflow temperature of 260°C allows for reliable soldering during assembly.
RF Small Signal Field Effect Transistors (FET) ATF-521P8-BLK attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from Broadcom
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JESD-609 Code:
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ATF-521P8-BLK Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
HTS
8541.29.00.75
SB
8541.29.00.80
Broadcom Inc, a Delaware corporation headquartered in San Jose, CA, is a global technology leader that designs, develops and supplies a broad range of semiconductor and infrastructure software solutions. Broadcom’s category-leading product portfolio serves critical markets including data center, networking, software, broadband, wireless, storage and industrial. Our solutions include data center networking and storage, enterprise and mainframe software focused on automation, monitoring and security, smartphone components, telecoms and factory automation.
LM317TG
Texas Instruments
LM317TG by Texas Instruments is an adjustable positive single output standard regulator with a max output voltage of 37V and max output current of 1.5A. It operates in temperatures ranging from 0 to 125°C, making it suitable for various applications requiring precise voltage regulation in electronic circuits. The package style is flange mount, with a rectangular shape and through-hole terminals for easy installation.
2N7002
Promax-johnton
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Form: GULL WING; Maximum Drain-Source On Resistance: 7.5 ohm; Minimum DS Breakdown Voltage: 60 V;
2N2222A
Crimson Semiconductor
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
1N4148
Taitron Components
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
AT90CAN128-16AU
Atmel
MICROCONTROLLER, RISC; Temperature Grade: INDUSTRIAL; Terminal Form: GULL WING; No. of Terminals: 64; Package Code: TQFP; Package Shape: SQUARE;
1N5819HW-7-F
Diodes Incorporated
1N5819HW-7-F by Diodes Inc. is a Schottky rectifier diode with 40V reverse test voltage, 1A output current, and 0.75V forward voltage. It's a surface mount device in a small outline package ideal for efficiency applications at temperatures ranging from -65 to 125°C.
Semiconductors
RECTIFIER DIODE; Surface Mount: NO; Maximum Output Current: .15 A; Maximum Forward Voltage (VF): 1 V; Maximum Operating Temperature: 200 Cel; No. of Elements: 1;
Nte Electronics
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): .8 A; Terminal Form: WIRE;
M39029/56351
Esterline Technologies
CONNECTOR ACCESSORY; IEC Conformity: NO; Contact Gender: FEMALE; DIN Conformity: NO; MIL-Connector Accessory Name: CONTACT; Tool Settings: M22520/2-10;
MBR0520LT1G
Onsemi
MBR0520LT1G by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.385V and output current of 0.5A. It operates b/w -65°C to 125°C, has a peak reflow temperature of 260°C, and a repetitive peak reverse voltage of 20V. This diode is ideal for applications requiring high-speed switching in compact electronic devices.
ULN2803A
Allegro MicroSystems
NPN; Configuration: 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): .5 A; Maximum Operating Temperature: 85 Cel; Terminal Form: THROUGH-HOLE;
NE555D
Fairchild Semiconductor
PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;
M24308/2-1F
Bel Fuse
D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; Dielectric Withstanding Voltage (V): 1750VAC; No. of Connectors: ONE; Mixed Contacts: NO;
LM358N
Taejin Technology
OPERATIONAL AMPLIFIER; Temperature Grade: AUTOMOTIVE; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
43025-0400
Molex
The Molex 43025-0400 is a board connector with 4 contacts, 2 rows, and a mating contact pitch of 0.118". It has a body length of 0.27", insulation resistance of 1Gohm, and operates b/w -40 to 105°C. Ideal for commercial applications requiring a female connector with crimp termination and UL94V-0 flammability rating.
RK73H2ATTD10R0F
Koa Speer Electronics
RK73H2ATTD10R0F by Koa Speer Electronics is a 0805 SMT fixed resistor with 10 ohm resistance, 1% tolerance, and 0.25 W power dissipation. Ideal for surface mount applications in automotive electronics due to its AEC-Q200 reference standard and operating voltage of 150 V.
BAV99+
Multicomp Pro
BAV99+ by Multicomp Pro is a series connected diode with 0.2A output current and 75V peak reverse voltage. Its 0.006us reverse recovery time makes it ideal for high-speed applications. This small outline rectifier diode is designed for surface mount installation in electronic circuits.
LD1117S33TR
STMicroelectronics
LD1117S33TR by STMicroelectronics is a fixed positive single output LDO regulator with a nominal output voltage of 3.3V and max output current of 1.3A. It has a small outline package style, operates at an adjustable temperature range from 0 to 125°C, and is ideal for applications requiring stable voltage regulation in compact electronic devices.
LL4148
Sangdest Microelectronics (Nanjing)
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
AT90CAN128-16AUR
Microchip Technology
AT90CAN128-16AUR by Microchip: 16 MHz clock, 8-bit data RAM, and 131072 ROM words. Ideal for industrial applications with CAN, SPI, TWI connectivity and low power mode. Contains 4 timers, 8 ADC channels, and supports up to 10-bit analog to digital conversion.
934056334115
NXP Semiconductors
N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; No. of Elements: 2; No. of Terminals: 6; Transistor Application: AMPLIFIER;
2SK544E
The Onsemi 2SK544E is an N-CHANNEL RF FET with a max drain current of 0.03A, operating in DEPLETION MODE for AMPLIFIER applications. It features METAL-OXIDE SEMICONDUCTOR tech and operates in the VERY HIGH FREQUENCY BAND, making it ideal for high-frequency signal amplification in various electronic devices.
BF991
The NXP Semiconductors BF991 is an N-CHANNEL RF FET with a built-in diode, ideal for amplifier applications. Operating in DUAL GATE DEPLETION MODE, it offers a max drain current of 0.02 A and can handle up to 150 °C operating temperature. This small outline transistor features a very high frequency band and tin terminal finish.
BF247B
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Operating Temperature: 150 Cel; JESD-30 Code: O-PBCY-T3; Package Shape: ROUND;
J310RL
J310RL by Onsemi is an N-CHANNEL RF FET with a 25V DS Breakdown Voltage, ideal for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND. Featuring DEPLETION MODE operation, it has a Max Operating Temperature of 125 °C and a Crss of 2.5 pF, housed in a CYLINDRICAL package with TIN LEAD finish.
NE3210S01-T1
Nec Electronics
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Body Material: UNSPECIFIED; Minimum DS Breakdown Voltage: 3 V; No. of Terminals: 4;
BF545CTRL13
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Element Material: SILICON; Transistor Application: AMPLIFIER; Operating Mode: DEPLETION MODE;
934055956215
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Qualification: Not Qualified; Maximum Feedback Capacitance (Crss): .03 pF; Additional Features: LOW NOISE;
BF245BRLRP
BF245BRLRP by Onsemi is an N-CHANNEL RF FET with 30V DS Breakdown Voltage. Ideal for AMPLIFIER applications in ULTRA HIGH FREQUENCY BAND, it features SINGLE configuration and DEPLETION MODE operation. Package: PLASTIC/EPOXY, Shape: ROUND, Terminals: 3.
J308ZL1
J308ZL1 by Onsemi is an N-CHANNEL RF FET with 25V DS breakdown voltage, ideal for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND. Featuring a SINGLE configuration, it has a Crss of 2.5 pF and comes in a CYLINDRICAL package with TIN LEAD finish.
BF909WR,115
BF909WR,115 by NXP Semiconductors is an N-CHANNEL RF Small Signal FET with a PLASTIC/EPOXY package. It operates in DUAL GATE, ENHANCEMENT MODE for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND. Featuring a max Drain Current of 0.04 A and a Breakdown Voltage of 7 V, it is ideal for high-frequency circuit designs.
3SK168D
N-CHANNEL; Field Effect Transistor Technology: METAL SEMICONDUCTOR; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Operating Temperature: 125 Cel; Maximum Power Dissipation Ambient: .25 W; JESD-609 Code: e0;
BLF521
The NXP Semiconductors BLF521 is an N-CHANNEL RF FET with 40V DS breakdown voltage and 10dB power gain. Ideal for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND, it features a 1A max drain current and operates at up to 200°C.
MPF102RLRP
MPF102RLRP by Onsemi is an N-CHANNEL RF FET with a 25V DS Breakdown Voltage, ideal for AMPLIFIER applications. Operating in DEPLETION MODE, it offers a VERY HIGH FREQUENCY BAND and features a 3pF Crss. The transistor's SILICON element and TIN LEAD finish ensure reliable performance up to 125 °C.
BLF184XRS
Ampleon Netherlands B V
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Minimum Power Gain (Gp): 22.8 dB; Case Connection: SOURCE; Terminal Position: DUAL;
BF245BZL1
BF245BZL1 by Onsemi is an N-CHANNEL RF FET with 30V DS Breakdown Voltage. Ideal for AMPLIFIER applications in ULTRA HIGH FREQUENCY BAND, it features DEPLETION MODE operation and 0.1A ID. Package: PLASTIC/EPOXY, ROUND shape, THROUGH-HOLE terminals.
BF998R,215
NXP Semiconductors' BF998R,215 is an N-CHANNEL RF FET with a built-in diode for AMPLIFIER applications. Operating in DEPLETION MODE, it offers a 12V DS Breakdown Voltage and 0.03A Drain Current. With GULL WING terminals and ULTRA HIGH FREQUENCY capabilities, it's ideal for small outline designs in SOURCE connections.
BF909AWRT/R
N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Terminal Form: GULL WING; Operating Mode: DUAL GATE, ENHANCEMENT MODE; Minimum DS Breakdown Voltage: 7 V;
934028850215
N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; No. of Terminals: 4; Transistor Application: AMPLIFIER; Case Connection: SOURCE;
BLM7G1822S-80PBG
RF Small Signal Field-Effect Transistors;
Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.
ATF-55143-TR1G
Agilent Technologies
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Terminal Form: GULL WING; Maximum Operating Temperature: 150 Cel;
Broadcom
ATF-55143-TR1G by Broadcom is an N-channel RF FET with 15.5 dB power gain, ideal for amplifier applications in C band frequencies. It features a max drain current of 0.1 A, operating at up to 150°C with a power dissipation of 0.27 W in a small outline package suitable for surface mount assembly.
ATF-50189-BLK
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Qualification: Not Qualified; Transistor Element Material: SILICON; Maximum Drain Current (ID): 1 A;
ATF-54143-TR1G
Broadcom's ATF-54143-TR1G is an N-channel RF FET with 5V DS breakdown voltage and 15dB power gain, ideal for amplifier applications in C band. It features a small outline package, Gull Wing terminals, and operates in enhancement mode with high electron mobility technology. With a max power dissipation of 0.725W and operating temperature of 150°C, it offers reliable performance for various RF signal amplification needs.
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Form: GULL WING; Maximum Power Dissipation Ambient: .725 W; Moisture Sensitivity Level (MSL): 1;
ATF-54143-BLKG
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Application: AMPLIFIER; Package Shape: RECTANGULAR; Qualification: Not Qualified;
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation Ambient: .725 W; Transistor Element Material: GALLIUM ARSENIDE; Case Connection: SOURCE;
ATF-54143-TR1
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Drain Current (Abs) (ID): .12 A; No. of Elements: 1; Minimum Power Gain (Gp): 15 dB;
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Application: AMPLIFIER; Highest Frequency Band: C BAND; Qualification: Not Qualified;
ATF-531P8-BLK
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Minimum DS Breakdown Voltage: 7 V; Transistor Element Material: SILICON;
ATF-531P8-BLK by Broadcom is an N-channel RF FET transistor with a min DS breakdown voltage of 7V. It has a power gain of 18.5 dB and is commonly used as an amplifier in C band applications.
ATF-55143-BLKG
Broadcom's ATF-55143-BLKG is an N-channel RF FET with 15.5 dB power gain, ideal for amplifier applications in C band frequencies. It features a 5V DS breakdown voltage, 0.1A drain current, and operates at up to 150°C with a max power dissipation of 0.27W.
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Field Effect Transistor Technology: HIGH ELECTRON MOBILITY; Operating Mode: ENHANCEMENT MODE; JESD-30 Code: R-PDSO-G4;
ATF-55143
ATF-55143 by Broadcom is a N-CHANNEL RF FET used for amplification in C BAND applications. It has a min DS breakdown voltage of 5V and a power gain of 15.5 dB. This surface mount transistor operates in enhancement mode with a max drain current of 0.1A.
ATF-55143-TR1
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; JESD-609 Code: e0; Minimum Power Gain (Gp): 15.5 dB; Highest Frequency Band: C BAND;
Broadcom's ATF-55143-TR1 is an N-channel RF FET with 15.5 dB power gain, ideal for amplifier applications in C band frequencies. It features a 5V DS breakdown voltage, 0.1A drain current, and operates in enhancement mode. The transistor has a small outline package with gull wing terminals and can handle up to 0.27W power dissipation at 150°C ambient temperature.
ATF-521P8-BLK
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Moisture Sensitivity Level (MSL): 1; Highest Frequency Band: C BAND; JESD-30 Code: S-PDSO-N8;
ATF-54143-TR2G
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Form: GULL WING; Case Connection: SOURCE; Highest Frequency Band: C BAND;
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Moisture Sensitivity Level (MSL): 1; JESD-609 Code: e3; Minimum Power Gain (Gp): 15 dB;
ATF-521P8-TR2G
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Minimum DS Breakdown Voltage: 7 V; Package Body Material: PLASTIC/EPOXY; Qualification: Not Qualified;
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