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ATF-55143-TR1G

Broadcom

ATF-55143-TR1G by Broadcom

ATF-55143-TR1G by Broadcom is an N-channel RF FET with 15.5 dB power gain, ideal for amplifier applications in C band frequencies. It features a max drain current of 0.1 A, operating at up to 150°C with a power dissipation of 0.27 W in a small outline package suitable for surface mount assembly.

Median Price

$0.663

Lifecycle Status

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Nova Conductors

Japan . 300 parts In-Stock

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ComSIT Distribution GmbH

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ComSIT USA

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Infinite Electronics LLP

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Vyrian

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Sensible Micro Corp

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J2 Sourcing AB

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Digiode

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ACDS - Activité Composants Distribution Service

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Holdelec - ElecDif-Pro

France . 269 parts In-Stock

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Sea View Technologies

USA . 10 parts In-Stock

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Bristol Electronics

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Prism Electronics

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Continental Prestige Electronics

USA . 5,713 parts In-Stock

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$0.663

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$0.650

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Argo Parts USA

USA . 4,991 parts In-Stock

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$0.663

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$0.643

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Netroflash

USA . 2,000 parts In-Stock

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$0.663

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$0.650

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iBuyXS LLC

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$1.720

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Aztec Data Supply Inc.

USA . 4,973 parts In-Stock

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$1.950

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Corohmni

South Africa . 10 parts In-Stock

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AZTECH Wire

Italy . 420 parts In-Stock

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$5.457

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Decca Corp

Germany . 261 parts In-Stock

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$7.840

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Semicontronic

India . 1,330 parts In-Stock

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$14.050

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$13.699

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$13.628

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Kepictronics

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Perfect Parts

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QUARKTWIN TECHNOLOGY LTD

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Metaverse IC Inc.

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Alle Elektronik GmbH

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Microchip USA

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Glotronic Ltd.

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Speed Components Ltd (Excess)

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Corphita

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Supply Digital

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Overview

Broadcom's ATF-55143-TR1G RF Small Signal Field Effect Transistor is a game-changer in the amplifier industry. With its high power gain of 15.5 dB and superior technology, this N-CHANNEL transistor operates in the C BAND frequency with ease. Perfect for applications requiring small outline packages, this product offers customers unmatched performance and reliability. Trust Broadcom for cutting-edge solutions that elevate your projects to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes this product lightweight and durable, ideal for portable applications.

Polarity or Channel Type: N-CHANNEL

N-channel transistors provide higher electron mobility and better performance, making this product a reliable choice for amplification.

Configuration: SINGLE

The single configuration simplifies circuit design and ensures easy integration, making this product user-friendly.

Transistor Application: AMPLIFIER

Designed specifically for amplification, this product delivers excellent signal amplification with minimal distortion.

Surface Mount: YES

With surface mount capability, this product can be easily mounted on PCBs, saving space and improving overall efficiency.

Minimum DS Breakdown Voltage: 5 V

The minimum breakdown voltage of 5 V guarantees reliable operation and protection against voltage spikes.

Minimum Power Gain (Gp): 15.5 dB

With a minimum power gain of 15.5 dB, this product offers high amplification capabilities, ensuring clear and strong signals.

Package Shape: RECTANGULAR

The rectangular package shape provides a compact and space-saving design, ideal for applications with limited space.

Terminal Form: GULL WING

The gull wing terminal form offers secure and reliable connections, ensuring stable performance in demanding environments.

Operating Mode: ENHANCEMENT MODE

The enhancement mode operation allows for easier control of the transistor, enhancing overall performance and efficiency.

Technical Specifications

RF Small Signal Field Effect Transistors (FET) ATF-55143-TR1G attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from Broadcom

Specs

Case Connection:

SOURCE

Configuration:

Minimum DS Breakdown Voltage:

5 V

Maximum Drain Current (Abs) (ID):

.1 A

Maximum Drain Current (ID):

.1 A

Field Effect Transistor Technology:

HIGH ELECTRON MOBILITY

Highest Frequency Band:

C BAND

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation Ambient:

.27 W

Minimum Power Gain (Gp):

15.5 dB

Qualification:

Not Qualified

Sub-Category:

FET RF Small Signal

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

20

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

ATF-55143-TR1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.75

SB

8541.21.00.80

Manufacturer Highlights

Broadcom

Broadcom Inc, a Delaware corporation headquartered in San Jose, CA, is a global technology leader that designs, develops and supplies a broad range of semiconductor and infrastructure software solutions. Broadcom’s category-leading product portfolio serves critical markets including data center, networking, software, broadband, wireless, storage and industrial. Our solutions include data center networking and storage, enterprise and mainframe software focused on automation, monitoring and security, smartphone components, telecoms and factory automation.

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