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BF256ARL

Onsemi

BF256ARL by Onsemi

BF256ARL by Onsemi is an N-CHANNEL RF FET with 30V DS Breakdown Voltage. Operating in DEPLETION MODE, it offers ULTRA HIGH FREQUENCY performance. Ideal for applications requiring high frequency amplification in a CYLINDRICAL package with THROUGH-HOLE terminals.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

< 1k

Distributors (In-Stock)

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Vyrian

USA . 692 parts In-Stock

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Digiode

USA . 170 parts In-Stock

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Native Components

USA . 337 parts In-Stock

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$0.100

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$0.096

337

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Northwest PG Solutions

USA . 1,990 parts In-Stock

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$0.110

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$0.097

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$0.097

TANS Electronics

Latvia . 7,086 parts In-Stock

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Kulean Microsystems

USA . 4,814 parts In-Stock

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Problanco Electronics

Mexico . 4,616 parts In-Stock

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SupplyDigital Components

Austria . 2,321 parts In-Stock

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Corphita

USA . 816 parts In-Stock

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UHIMA Technologies

Türkiye . 712 parts In-Stock

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Corohmni

South Africa . 387 parts In-Stock

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Overview

Unleash the power of cutting-edge technology with the BF256ARL from Onsemi. As a leader in RF Small Signal Field Effect Transistors, Onsemi delivers unmatched quality and reliability in every product. Ideal for applications in the ultra-high frequency band, this N-channel transistor offers superior performance and efficiency. Say goodbye to technical frustrations and hello to seamless functionality with the BF256ARL. Upgrade your projects today and experience the difference with Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good mechanical strength and protection for the transistor, ensuring durability and reliability.

Polarity or Channel Type: N-CHANNEL

N-Channel FETs typically have better performance characteristics and lower conduction losses compared to P-Channel FETs.

Minimum DS Breakdown Voltage: 30 V

Suitable for a wide range of applications where a higher breakdown voltage is required for safe operation.

Package Shape: ROUND

Compact and space-saving design, ideal for applications where size constraints are a concern.

Terminal Form: THROUGH-HOLE

Allows for easy through-hole PCB mounting, simplifying the assembly process.

Operating Mode: DEPLETION MODE

Depletion mode FETs provide a normally-on operation, which can be advantageous in certain circuit designs.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Capable of operating in ultra high frequency bands, suitable for high-speed and high-frequency applications.

No. of Terminals: 3

Simple and straightforward 3-terminal connection making it easy to integrate into circuits.

Package Style (Meter): CYLINDRICAL

Cylindrical package style provides a standardized form factor for easy integration into various devices.

Field Effect Transistor Technology: JUNCTION

Junction FET technology offers good performance characteristics such as high input impedance and low noise.

Transistor Element Material: SILICON

Silicon-based transistors offer excellent reliability, performance, and temperature stability.

Terminal Finish: TIN LEAD

Tin lead terminal finish provides good solderability and ensures reliable electrical connections.

Terminal Position: BOTTOM

Bottom terminal position facilitates easy PCB mounting and soldering during assembly.

Technical Specifications

RF Small Signal Field Effect Transistors (FET) BF256ARL attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Additional Features:

EUROPEAN PART NUMBER

Configuration:

Minimum DS Breakdown Voltage:

30 V

Field Effect Transistor Technology:

JUNCTION

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Trade Compliance

BF256ARL Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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