Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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BF256ARLRA by Onsemi is an N-CHANNEL RF FET with 30V DS Breakdown Voltage. Operating in DEPLETION MODE, it offers ULTRA HIGH FREQUENCY performance. Ideal for applications requiring high frequency amplification in a CYLINDRICAL package with THROUGH-HOLE terminals.
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$0.151
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$0.166
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Problanco Electronics
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TANS Electronics
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UHIMA Technologies
Corohmni
The use of plastic/epoxy material in the package body ensures durability and reliability of the transistor.
N-channel transistors are known for their high input impedance and low output impedance, making them suitable for many applications.
Single configuration simplifies the design process and reduces the complexity of the circuit where the transistor is used.
The high breakdown voltage of 30V makes this transistor suitable for applications where higher voltage handling is required.
The round package shape allows for easy integration and mounting in various electronic circuits.
Through-hole terminals provide a secure and reliable connection to the circuit board, ensuring proper functionality.
Depletion mode operation offers flexibility in controlling the transistor's conductance and enhances its performance in certain applications.
The ultra high frequency band capability allows for high-speed signal processing and communication applications.
Having 3 terminals provides the necessary connections for input, output, and biasing, enabling versatile use in various circuit configurations.
The cylindrical package style offers a compact and space-saving design for applications where board space is limited.
Junction FET technology ensures high performance and reliability in signal amplification and switching applications.
Silicon is a widely used semiconductor material known for its thermal stability and performance, making it ideal for the transistor's element.
The tin-lead terminal finish provides good solderability, ensuring easy and reliable connections during assembly.
The bottom terminal position simplifies the mounting and soldering process, enhancing the ease of integration of the transistor in circuits.
RF Small Signal Field Effect Transistors (FET) BF256ARLRA attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from Onsemi
Configuration:
Minimum DS Breakdown Voltage:
Field Effect Transistor Technology:
Highest Frequency Band:
JEDEC-95 Code:
JESD-30 Code:
JESD-609 Code:
No. of Elements:
No. of Terminals:
Operating Mode:
Package Body Material:
Package Shape:
Package Style (Meter):
Polarity or Channel Type:
Qualification:
Surface Mount:
Terminal Finish:
Terminal Form:
Terminal Position:
Transistor Element Material:
BF256ARLRA Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).
President, CEO
Hassane El-Khoury
Executive VP, CFO, Treasurer
Thad Trent
Senior VP
Ross F. Jatou
Aizu Fab
Fabrication
Fab Initiation
1995
Japan
Aizu Wakamatsu
Wafer Capacity
52,000
Si/EPI Fab
2018
Czech Republic
Rožnov pod Radhoštěm
10,000
Expansion Phase 1 for SiC / EPI
2019
14,500
Expansion Phase 2 for SiC / EPI
2024
SiC Fab
2022
USA
Hudson
Bucheon
2013
South Korea
61,000
ISMF - Malaysia
1990
Malaysia
Seremban
95,000
Roznov Device Fab
1987
80,000
Fab 10
2002
East Fishkill
15,000
Burlington
1986
Canada
Gresham
1998
45,000
Bucheon 150mm
2000
50,000
Rochester
1983
Nampa
Pennsylvania
1997
Mountain Top
36,000
SN65HVD234DR
Texas Instruments
SN65HVD234DR by Texas Instruments is an 8-terminal interface circuit with a data rate of 1 Mbps. Operating temperature ranges from -40 to 125 °C, making it ideal for automotive applications. With a supply voltage of 3.3 V and low current draw of 6 mA, it's suitable for network interfaces in compact designs.
2N7002
Diodes Incorporated
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Terminal Form: GULL WING; JESD-30 Code: R-PDSO-G3;
2N2222A
Bytesonic Electronics
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .6 A; No. of Elements: 1;
LL4148
Formosa Microsemi
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
SS14
Sangdest Microelectronics (Nanjing)
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
AMS1117-3.3
Advanced Monolithic Systems
AMS1117-3.3 by Advanced Monolithic Systems is a fixed positive single output LDO regulator with 1A max output current, 3% voltage tolerance, and 1.3V dropout voltage. Ideal for applications requiring stable 3.3V supply in compact designs due to its small outline package and excellent load regulation of 0.025%.
M24308/2-1F
TE Connectivity
TE Connectivity's M24308/2-1F D-Sub Connector features 9 contacts, 2 rows, and a shell size of 1/E. With a rated current of 7.5A, it operates b/w -55°C to 125°C. Ideal for cable mounting applications, this connector has a steel shell with cadmium finish and uses crimp termination for female contact pins.
ULN2803ADWRG4
ULN2803ADWRG4 by Texas Instruments is a peripheral driver with 8 functions, open-collector output, and built-in transient protection. It operates b/w -40 to 85 °C with a max supply voltage of 3 V. Ideal for applications requiring sink current flow direction in a small outline package style.
EU2B-YS303C
Idec
ROTARY SWITCH;
NC7WZ07P6X
Fairchild Semiconductor
BUFFER; Temperature Grade: INDUSTRIAL; Terminal Form: GULL WING; No. of Terminals: 6; Package Code: TSSOP; Package Shape: RECTANGULAR;
OPA2277UA/2K5E4
OPA2277UA/2K5E4 by Texas Instruments is a dual operational amplifier with low-offset and micropower features. It has a max input offset voltage of 100uV, nominal common mode reject ratio of 140dB, and min slew rate of 0.8V/us. Ideal for industrial applications requiring precise signal amplification in compact designs.
ABS07-32.768KHZ-T
Abracon
Abracon ABS07-32.768KHZ-T crystal oscillator offers 20 ppm frequency tolerance, 144% stability, and 70000 ohm series resistance. Ideal for applications requiring 0.032768 MHz frequency precision in a compact surface-mount design with gold over nickel finish.
Changzhou Galaxy Century Microelectronics
RECTIFIER DIODE; Surface Mount: YES; No. of Phases: 1; Maximum Non Repetitive Peak Forward Current: 40 A; Technology: SCHOTTKY; No. of Elements: 1;
1N4148WT
Surge Components
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
BSS138LT3G
Onsemi
BSS138LT3G by Onsemi is a N-CHANNEL FET with a min DS breakdown voltage of 50V. It is used for switching applications and has a max drain current of 0.2A and max drain-source on resistance of 3.5 ohm.
LM7805CT
FIXED POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Package Code: TO-220; Terminal Form: THROUGH-HOLE; Maximum Input Voltage Absolute: 35 V; Maximum Voltage Tolerance: 5 %;
BAV99
Won-top Electronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
87832-1420
Molex
87832-1420 by Molex is a 14-contact board connector with 0.079" pitch, suitable for commercial applications. It features matte tin over nickel finish, glass-filled polyamide insulator, and polarization key for easy assembly. Withstanding voltage of 1400VAC and operating temperature range from -55 to 105°C make it reliable for various electronic devices.
NDT2955
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3 W; Package Style (Meter): SMALL OUTLINE; Maximum Drain Current (Abs) (ID): 2.5 A;
1552200253
WIRE AND CABLE;
BF244BRL1
BF244BRL1 by Onsemi is an N-CHANNEL RF FET with 30V DS Breakdown Voltage. Ideal for AMPLIFIER applications in ULTRA HIGH FREQUENCY BAND, it has a max ID of 0.1A and operates in DEPLETION MODE. Package: PLASTIC/EPOXY, Shape: ROUND, Terminals: 3.
BF512-TAPE-13
NXP Semiconductors
BF512-TAPE-13 by NXP Semiconductors is an N-channel RF FET designed for amplifier applications. It features a 20V min DS breakdown voltage, operates in depletion mode, and supports very high frequency bands. This compact surface mount transistor ensures reliable performance up to 150 °C.
BFW11
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Minimum DS Breakdown Voltage: 30 V; Highest Frequency Band: VERY HIGH FREQUENCY BAND; Case Connection: SHIELD;
934063115215
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Case Connection: SOURCE; Package Body Material: PLASTIC/EPOXY; Maximum Drain Current (ID): .04 A;
BF245CRL1
BF245CRL1 by Onsemi is an N-CHANNEL RF FET with 30V DS Breakdown Voltage. Ideal for AMPLIFIER applications in ULTRA HIGH FREQUENCY BAND, it has a max ID of 0.1A and operates in DEPLETION MODE. Package: PLASTIC/EPOXY, Shape: ROUND, Terminals: 3.
BF247A
Motorola
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; JESD-30 Code: O-PBCY-W3; Field Effect Transistor Technology: JUNCTION;
BF904WR-T
N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Maximum Feedback Capacitance (Crss): .035 pF; Case Connection: SOURCE;
TGF1350-SCC
TGF1350-SCC by Texas Instruments is an RF FET with 8V DS breakdown voltage, 2.5 dB power gain, and operates in depletion mode. Ideal for KU band applications, this GaAs transistor has a rectangular package shape and 6 terminals for high-frequency performance.
2N5486
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; JEDEC-95 Code: TO-92; Operating Mode: DEPLETION MODE; Package Style (Meter): CYLINDRICAL;
BF909WR-TAPE-13
BF909WR-TAPE-13 by NXP Semiconductors is an N-channel RF FET designed for amplifier applications. It features a max DS breakdown voltage of 7V, operates in the ultra-high frequency band, and supports dual gate enhancement mode. Ideal for compact surface mount designs, it ensures reliable performance up to 150 °C.
J211
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Operating Mode: DEPLETION MODE; Package Style (Meter): CYLINDRICAL; Transistor Application: SWITCHING;
934054120215
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Shape: RECTANGULAR; Additional Features: LOW NOISE;
J308-T/R
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Package Shape: ROUND; Qualification: Not Qualified; Maximum Operating Temperature: 150 Cel;
2N3823
Central Semiconductor
N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; JESD-609 Code: e0; Qualification: Not Qualified; Terminal Finish: TIN LEAD;
934028860235
N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Additional Features: LOW NOISE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Terminal Finish: TIN;
MPF102RL1
MPF102RL1 by Onsemi is an N-CHANNEL RF FET with a 25V DS Breakdown Voltage, ideal for AMPLIFIER applications in the VERY HIGH FREQUENCY BAND. Operating in DEPLETION MODE, it features a Max Operating Temperature of 125 °C and a Crss of 3 pF, housed in a CYLINDRICAL package.
MPF102G
MPF102G by Onsemi is an N-CHANNEL RF FET with a 25V DS breakdown voltage, ideal for AMPLIFIER applications in the VERY HIGH FREQUENCY BAND. Featuring a DEPLETION MODE operation, it has a max power dissipation of 0.2W and can withstand up to 125 °C operating temperature.
BF909R-T
N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Operating Mode: DUAL GATE, ENHANCEMENT MODE; Package Style (Meter): SMALL OUTLINE; Package Shape: RECTANGULAR;
BF998E6327
Siemens
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Form: GULL WING; No. of Terminals: 4; Case Connection: SOURCE;
2N3819
Solid State Devices
N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): .36 W; Package Style (Meter): CYLINDRICAL; No. of Terminals: 3; Qualification: Not Qualified;
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BF256A
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Terminal Form: THROUGH-HOLE; No. of Terminals: 3;
BF256AG
RF Small Signal Field-Effect Transistors; JESD-609 Code: e1; Terminal Finish: Tin/Silver/Copper (Sn/Ag/Cu);
BF256ARL
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; JESD-609 Code: e0; No. of Terminals: 3; Terminal Finish: TIN LEAD;
BF256ARL1
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Package Body Material: PLASTIC/EPOXY; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Terminal Finish: TIN LEAD;
BF256ARLRE
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Package Body Material: PLASTIC/EPOXY; Field Effect Transistor Technology: JUNCTION; Terminal Form: THROUGH-HOLE;
BF256ARLRM
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; JESD-609 Code: e0; Package Shape: ROUND; JEDEC-95 Code: TO-92;
BF256ARLRP
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; JEDEC-95 Code: TO-92; Minimum DS Breakdown Voltage: 30 V;
BF256AZL1
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; No. of Elements: 1; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Terminal Position: BOTTOM;
BF256B
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .35 W; Field Effect Transistor Technology: JUNCTION; JESD-609 Code: e3;
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Transistor Application: AMPLIFIER; No. of Terminals: 3; Package Shape: ROUND;
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Package Body Material: PLASTIC/EPOXY; Terminal Form: THROUGH-HOLE; No. of Elements: 1;
BF256B/1
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Minimum DS Breakdown Voltage: 30 V; Transistor Element Material: SILICON; Maximum Operating Temperature: 150 Cel;
BF256C
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; No. of Terminals: 3; No. of Elements: 1; JESD-30 Code: O-PBCY-T3;
BF256C/D29Z
National Semiconductor
RF Small Signal Field-Effect Transistors; Configuration: SINGLE; Surface Mount: NO; Package Shape: ROUND; Qualification: Not Qualified; Transistor Element Material: SILICON;
BF256C/D74Z(L34Z)
RF Small Signal Field-Effect Transistors; Configuration: SINGLE; Surface Mount: NO; No. of Terminals: 3; Terminal Form: THROUGH-HOLE; Package Shape: ROUND;
BF256RL
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; No. of Elements: 1; Field Effect Transistor Technology: JUNCTION; Terminal Position: BOTTOM;
BF256RLRM
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Field Effect Transistor Technology: JUNCTION; Qualification: Not Qualified; Package Shape: ROUND;
BF256C5
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; No. of Terminals: 3; Minimum DS Breakdown Voltage: 30 V; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;
BF256CJ18Z
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Qualification: Not Qualified; Field Effect Transistor Technology: JUNCTION; Package Body Material: PLASTIC/EPOXY;
BF256C(L34Z)
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Field Effect Transistor Technology: JUNCTION; No. of Terminals: 3;
Supply Digital Components
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