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BF245ARLRM

Onsemi

BF245ARLRM by Onsemi

BF245ARLRM by Onsemi is an N-CHANNEL RF FET with 30V DS breakdown voltage. Ideal for AMPLIFIER applications in ULTRA HIGH FREQUENCY BAND, it has a max ID of 0.1A and operates in DEPLETION MODE. Package: PLASTIC/EPOXY, Shape: ROUND, Terminals: 3.

Median Price

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Lifecycle Status

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2

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1k+

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Digiode

USA . 2,313 parts In-Stock

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Vyrian

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Kulean Microsystems

USA . 6,838 parts In-Stock

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SupplyDigital Components

Austria . 5,469 parts In-Stock

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TANS Electronics

Latvia . 4,952 parts In-Stock

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Problanco Electronics

Mexico . 2,759 parts In-Stock

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Northwest PG Solutions

USA . 1,815 parts In-Stock

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Corphita

USA . 1,057 parts In-Stock

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UHIMA Technologies

Türkiye . 541 parts In-Stock

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Corohmni

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Native Components

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Overview

Experience unparalleled performance with the BF245ARLRM by Onsemi, a leading manufacturer of high-quality RF Small Signal Field Effect Transistors. Ideal for amplifier applications in the ultra-high frequency band, this N-channel transistor offers reliable and efficient operation. Its plastic/epoxy package body ensures durability and longevity, making it a valuable investment for your electronic projects. Enhance your designs with the superior quality and advanced technology of the BF245ARLRM.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good thermal conductivity and insulation, enhancing the reliability and performance of the transistor.

Polarity or Channel Type: N-CHANNEL

Offers low on-resistance and high input impedance, making it suitable for signal amplification applications.

Minimum DS Breakdown Voltage: 30 V

Ensures safe operation in high voltage environments, adding to the durability of the transistor.

Transistor Application: AMPLIFIER

Specifically designed for signal amplification, providing high gain and low noise performance.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Ideal for applications requiring high-speed signal processing and transmission in the ultra-high frequency range.

Transistor Element Material: SILICON

Well-known for its excellent performance, reliability, and versatility, making it a preferred material for transistors.

Maximum Drain Current (ID): 0.1 A

Capable of handling moderate current levels, suitable for small signal amplification tasks without the risk of overload.

Technical Specifications

RF Small Signal Field Effect Transistors (FET) BF245ARLRM attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Configuration:

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (ID):

.1 A

Field Effect Transistor Technology:

JUNCTION

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

BF245ARLRM Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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