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TGF1350XPMX

Texas Instruments

TGF1350XPMX by Texas Instruments

TGF1350XPMX by Texas Instruments is an N-CHANNEL RF FET with 8V DS Breakdown Voltage, 8dB Power Gain, and operates in DEPLETION MODE. Ideal for KU BAND applications, it has a 0.1A Drain Current, 0.7W Power Dissipation at 150°C, and features GALLIUM ARSENIDE technology.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,751 parts In-Stock

1+ parts

-

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6,751

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Digiode

USA . 4,026 parts In-Stock

1+ parts

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4,026

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,483 parts In-Stock

1+ parts

$0.886

100+ parts

-

1k+ parts

$1.822

10k+ parts

-

1,483

$0.886

-

$1.822

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ChromeModa Solutions

Germany . 3,677 parts In-Stock

1+ parts

$0.996

100+ parts

$0.817

1k+ parts

-

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3,677

$0.996

$0.817

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IDEA Electronic Components Group

UK . 1,882 parts In-Stock

1+ parts

$0.996

100+ parts

-

1k+ parts

$0.896

10k+ parts

-

1,882

$0.996

-

$0.896

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Semicontronic

India . 684 parts In-Stock

1+ parts

$3.050

100+ parts

$2.974

1k+ parts

$2.958

10k+ parts

-

684

$3.050

$2.974

$2.958

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AZTECH Wire

Italy . 562 parts In-Stock

1+ parts

$8.860

100+ parts

-

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562

$8.860

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Ampacity Inc.

Singapore . 1,158 parts In-Stock

1+ parts

$50.050

100+ parts

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1,158

$50.050

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One Stop Electronics

USA . 1,228 parts In-Stock

1+ parts

$60.050

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1,228

$60.050

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Corphita

USA . 3,456 parts In-Stock

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3,456

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DigiPath Technology Company

USA . 125 parts In-Stock

1+ parts

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100+ parts

$0.898

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125

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$0.898

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Corohmni

South Africa . 123 parts In-Stock

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123

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Overview

Experience superior performance and reliability with the TGF1350XPMX by Texas Instruments, a top-tier manufacturer known for innovative technology. This RF Small Signal Field Effect Transistor (FET) offers exceptional power gain and a high operating frequency range in the Ku band, making it ideal for a wide range of applications. With a ceramic, metal-sealed co-fired package body and N-channel configuration, this transistor ensures quality and durability. Unlock new possibilities and achieve optimal results with the TGF1350XPMX, delivering value, efficiency, and precision to meet your needs.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

The ceramic and metal-sealed cofired package body material provides durability and protection, making the product suitable for various applications in different environments.

Polarity or Channel Type: N-CHANNEL

N-channel FETs have better performance characteristics in terms of conductivity and efficiency, making this product a good choice for applications requiring high performance.

Minimum DS Breakdown Voltage: 8 V

The minimum breakdown voltage of 8 V ensures reliable operation and protection against voltage spikes or fluctuations, making this product suitable for stable performance in demanding conditions.

Minimum Power Gain (Gp): 8 dB

The minimum power gain of 8 dB indicates good amplification capabilities, making this product suitable for applications requiring signal amplification and strength.

Surface Mount: YES

The surface mount capability allows for easy and convenient installation, reducing assembly time and effort, making this product a practical choice for mass production and integrated circuit designs.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this product can withstand high temperatures without compromising performance, making it suitable for applications with demanding temperature requirements.

Terminal Position: RADIAL

The radial terminal position enables efficient connections and easy integration into circuit designs, ensuring stable and reliable operation, making this product a convenient choice for various applications.

Technical Specifications

RF Small Signal Field Effect Transistors (FET) TGF1350XPMX attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from Texas Instruments

Specs

Case Connection:

SOURCE

Configuration:

Minimum DS Breakdown Voltage:

8 V

Maximum Drain Current (Abs) (ID):

.1 A

Maximum Drain Current (ID):

.1 A

Field Effect Transistor Technology:

JUNCTION

Highest Frequency Band:

KU BAND

JESD-30 Code:

O-CRDB-F4

No. of Elements:

1

No. of Terminals:

4

Operating Mode:

DEPLETION MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

ROUND

Package Style (Meter):

DISK BUTTON

Polarity or Channel Type:

Maximum Power Dissipation Ambient:

.7 W

Minimum Power Gain (Gp):

8 dB

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

RADIAL

Transistor Element Material:

GALLIUM ARSENIDE

Trade Compliance

TGF1350XPMX Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.95

SB

8541.21.00.80

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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