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TGF1350SPMX

Texas Instruments

TGF1350SPMX by Texas Instruments

TGF1350SPMX by Texas Instruments is an N-CHANNEL RF FET with 8V DS Breakdown Voltage and 8dB Power Gain. Ideal for KU BAND applications, it operates in DEPLETION MODE with 0.1A Drain Current, 0.7W Power Dissipation, and up to 150°C Operating Temperature.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,973 parts In-Stock

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6,973

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Digiode

USA . 4,739 parts In-Stock

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4,739

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Distributors (Availability)

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Parana Technologies

USA . 722 parts In-Stock

1+ parts

$1.078

100+ parts

-

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$1.926

10k+ parts

-

722

$1.078

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$1.926

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DigiPath Technology Company

USA . 1,950 parts In-Stock

1+ parts

$1.187

100+ parts

$1.092

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1,950

$1.187

$1.092

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ChromeModa Solutions

Germany . 2,035 parts In-Stock

1+ parts

$1.211

100+ parts

$0.993

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2,035

$1.211

$0.993

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IDEA Electronic Components Group

UK . 909 parts In-Stock

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$1.211

100+ parts

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$1.090

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909

$1.211

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$1.090

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Semicontronic

India . 1,211 parts In-Stock

1+ parts

$8.050

100+ parts

$7.849

1k+ parts

$7.808

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1,211

$8.050

$7.849

$7.808

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One Stop Electronics

USA . 1,233 parts In-Stock

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$10.050

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1,233

$10.050

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AZTECH Wire

Italy . 505 parts In-Stock

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$19.757

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505

$19.757

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Ampacity Inc.

Singapore . 1,138 parts In-Stock

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$53.050

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1,138

$53.050

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Corphita

USA . 3,840 parts In-Stock

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3,840

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Corohmni

South Africa . 396 parts In-Stock

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Overview

Discover the power and precision of the TGF1350SPMX by Texas Instruments, a top-tier RF Small Signal Field Effect Transistor that delivers unparalleled performance in the KU Band. With a sleek ceramic and metal-sealed co-fired package body, this N-Channel transistor offers a single configuration for seamless integration into your projects. Experience a minimum DS breakdown voltage of 8V and a power gain of 8dB, ensuring optimal signal amplification. Perfect for applications requiring high-frequency transmission, this transistor boasts reliability and efficiency that Texas Instruments is renowned for. Elevate your designs with the TGF1350SPMX and unlock a world of possibilities.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

Provides durability and protection for the internal components, making it suitable for harsh environments.

Polarity or Channel Type: N-CHANNEL

Offers efficient signal processing capabilities for N-channel applications.

Configuration: SINGLE

Simplified design for ease of use and installation.

Surface Mount: YES

Enables easy and secure mounting on circuit boards for efficient integration.

Minimum DS Breakdown Voltage: 8 V

Provides a stable voltage threshold for effective operation.

Minimum Power Gain (Gp): 8 dB

Offers enhanced signal amplification for improved performance.

Package Shape: ROUND

Compact design for space-saving installations.

Operating Mode: DEPLETION MODE

Efficient energy consumption and optimal performance in depletion mode operation.

Highest Frequency Band: KU BAND

Suitable for high-frequency applications in the Ku band range.

Maximum Drain Current (Abs) (ID): 0.1 A

Can handle a maximum drain current of 0.1 A for reliable operation.

No. of Terminals: 4

Simplifies connectivity and integration into circuit systems.

Package Style (Meter): DISK BUTTON

Unique and compact package style for efficient installation and space utilization.

Field Effect Transistor Technology: JUNCTION

Utilizes junction FET technology for superior performance and signal processing capabilities.

Maximum Power Dissipation Ambient: 0.7 W

Efficiently dissipates heat during operation to maintain optimal temperature levels.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures up to 150°C for versatile usage.

Transistor Element Material: GALLIUM ARSENIDE

High-quality material for the transistor element, ensuring reliable and consistent performance.

Maximum Drain Current (ID): 0.1 A

Handles a maximum drain current of 0.1 A, suitable for various applications.

Terminal Position: RADIAL

Radial terminal position for easy connectivity and integration into circuits.

Case Connection: SOURCE

Source connection for efficient signal processing and performance.

Technical Specifications

RF Small Signal Field Effect Transistors (FET) TGF1350SPMX attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from Texas Instruments

Specs

Case Connection:

SOURCE

Configuration:

Minimum DS Breakdown Voltage:

8 V

Maximum Drain Current (Abs) (ID):

.1 A

Maximum Drain Current (ID):

.1 A

Field Effect Transistor Technology:

JUNCTION

Highest Frequency Band:

KU BAND

JESD-30 Code:

O-CRDB-F4

No. of Elements:

1

No. of Terminals:

4

Operating Mode:

DEPLETION MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

ROUND

Package Style (Meter):

DISK BUTTON

Polarity or Channel Type:

Maximum Power Dissipation Ambient:

.7 W

Minimum Power Gain (Gp):

8 dB

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

RADIAL

Transistor Element Material:

GALLIUM ARSENIDE

Trade Compliance

TGF1350SPMX Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.95

SB

8541.21.00.80

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

Category top products 20

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