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TGF1350XPCX

Texas Instruments

TGF1350XPCX by Texas Instruments

TGF1350XPCX by Texas Instruments is an N-CHANNEL RF FET with 8V DS Breakdown Voltage and 8dB Power Gain. Ideal for KU BAND applications, it operates in DEPLETION MODE with 0.1A Drain Current, 0.7W Power Dissipation, and 150°C Max Temp.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,912 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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3,912

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-

-

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Digiode

USA . 2,375 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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2,375

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-

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-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 901 parts In-Stock

1+ parts

$1.371

100+ parts

-

1k+ parts

$2.091

10k+ parts

-

901

$1.371

-

$2.091

-

DigiPath Technology Company

USA . 182 parts In-Stock

1+ parts

$1.509

100+ parts

$1.388

1k+ parts

-

10k+ parts

-

182

$1.509

$1.388

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ChromeModa Solutions

Germany . 5,476 parts In-Stock

1+ parts

$1.540

100+ parts

$1.263

1k+ parts

-

10k+ parts

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5,476

$1.540

$1.263

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IDEA Electronic Components Group

UK . 814 parts In-Stock

1+ parts

$1.540

100+ parts

-

1k+ parts

$1.386

10k+ parts

-

814

$1.540

-

$1.386

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Ampacity Inc.

Singapore . 769 parts In-Stock

1+ parts

$4.050

100+ parts

-

1k+ parts

-

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-

769

$4.050

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-

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AZTECH Wire

Italy . 742 parts In-Stock

1+ parts

$15.287

100+ parts

-

1k+ parts

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10k+ parts

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742

$15.287

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-

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Semicontronic

India . 190 parts In-Stock

1+ parts

$28.050

100+ parts

$27.349

1k+ parts

$27.208

10k+ parts

-

190

$28.050

$27.349

$27.208

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One Stop Electronics

USA . 1,001 parts In-Stock

1+ parts

$56.050

100+ parts

-

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1,001

$56.050

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Corphita

USA . 2,558 parts In-Stock

1+ parts

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2,558

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Corohmni

South Africa . 147 parts In-Stock

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147

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Overview

Elevate your RF small signal applications with the Texas Instruments TGF1350XPCX. Manufactured with precision and expertise, this N-channel field effect transistor offers unparalleled quality and performance. Ideal for KU band frequencies, this single configuration FET boasts a minimum power gain of 8dB, providing customers with reliable and efficient signal amplification. Experience the benefits of Texas Instruments' cutting-edge technology with the TGF1350XPCX, delivering value and superior functionality for all your RF needs.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

The ceramic and metal-sealed co-fired package body material provides durability and reliability, making this product suitable for harsh environments.

Polarity or Channel Type: N-CHANNEL

N-CHANNEL configuration allows for efficient signal amplification and low noise performance.

Minimum DS Breakdown Voltage: 8 V

With a minimum breakdown voltage of 8V, this product offers protection against voltage spikes and ensures stable operation.

Minimum Power Gain (Gp): 8 dB

The minimum power gain of 8dB indicates good amplification capabilities for small signal applications.

Surface Mount: YES

Being surface mountable makes installation easier and allows for compact circuit designs.

Maximum Power Dissipation Ambient: 0.7 W

The maximum power dissipation of 0.7W indicates efficient energy usage and heat dissipation, ensuring long-term reliability.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this product can withstand high temperature environments.

Technical Specifications

RF Small Signal Field Effect Transistors (FET) TGF1350XPCX attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from Texas Instruments

Specs

Case Connection:

SOURCE

Configuration:

Minimum DS Breakdown Voltage:

8 V

Maximum Drain Current (Abs) (ID):

.1 A

Maximum Drain Current (ID):

.1 A

Field Effect Transistor Technology:

JUNCTION

Highest Frequency Band:

KU BAND

JESD-30 Code:

O-CRDB-F4

No. of Elements:

1

No. of Terminals:

4

Operating Mode:

DEPLETION MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

ROUND

Package Style (Meter):

DISK BUTTON

Polarity or Channel Type:

Maximum Power Dissipation Ambient:

.7 W

Minimum Power Gain (Gp):

8 dB

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

RADIAL

Transistor Element Material:

GALLIUM ARSENIDE

Trade Compliance

TGF1350XPCX Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.95

SB

8541.21.00.80

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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