Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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J308ZL1 by Onsemi is an N-CHANNEL RF FET with 25V DS breakdown voltage, ideal for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND. Featuring a SINGLE configuration, it has a Crss of 2.5 pF and comes in a CYLINDRICAL package with TIN LEAD finish.
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Corohmni
The use of plastic/epoxy material in the package provides good insulation and protection for the transistor, ensuring reliable performance in various operating conditions.
N-Channel FET typically has higher electron mobility, making it suitable for high-frequency applications such as amplifiers.
Single configuration makes it easy to use and integrate into circuit designs, simplifying the overall circuit layout.
Designed specifically for amplifier applications, ensuring optimal performance and efficiency in amplifying signals.
Suitable for applications where a higher breakdown voltage is required, providing added reliability and safety margin.
The round package shape allows for easy mounting and integration into various electronic systems.
Through-hole terminals provide secure and reliable connections for improved conductivity and durability.
Depletion mode operation offers better control over the transistor characteristics, enhancing performance in certain applications.
Designed for ultra-high-frequency applications, making it suitable for high-speed signal processing and communication systems.
Having 3 terminals allows for easy interfacing and connection with other circuit components, enabling versatile usage in different circuit designs.
The cylindrical package style provides a compact and space-efficient design, ideal for applications with limited space constraints.
Junction FET technology offers high gain and low noise characteristics, making it suitable for amplifier and signal processing applications.
Silicon material provides good thermal properties and reliability, ensuring stable performance over a wide temperature range.
Tin lead finish on terminals offers good solderability and corrosion resistance, ensuring reliable connections and long-term durability.
Bottom terminal position allows for easy PCB mounting and soldering, facilitating efficient assembly and maintenance.
Low feedback capacitance helps in reducing signal distortion and improving overall amplifier performance, especially at higher frequencies.
RF Small Signal Field Effect Transistors (FET) J308ZL1 attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from Onsemi
Additional Features:
Configuration:
Minimum DS Breakdown Voltage:
Field Effect Transistor Technology:
Maximum Feedback Capacitance (Crss):
Highest Frequency Band:
JEDEC-95 Code:
JESD-30 Code:
JESD-609 Code:
No. of Elements:
No. of Terminals:
Operating Mode:
Package Body Material:
Package Shape:
Package Style (Meter):
Polarity or Channel Type:
Qualification:
Surface Mount:
Terminal Finish:
Terminal Form:
Terminal Position:
Transistor Application:
Transistor Element Material:
J308ZL1 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).
President, CEO
Hassane El-Khoury
Executive VP, CFO, Treasurer
Thad Trent
Senior VP
Ross F. Jatou
Aizu Fab
Fabrication
Fab Initiation
1995
Japan
Aizu Wakamatsu
Wafer Capacity
52,000
Si/EPI Fab
2018
Czech Republic
Rožnov pod Radhoštěm
10,000
Expansion Phase 1 for SiC / EPI
2019
14,500
Expansion Phase 2 for SiC / EPI
2024
SiC Fab
2022
USA
Hudson
Bucheon
2013
South Korea
61,000
ISMF - Malaysia
1990
Malaysia
Seremban
95,000
Roznov Device Fab
1987
80,000
Fab 10
2002
East Fishkill
15,000
Burlington
1986
Canada
Gresham
1998
45,000
Bucheon 150mm
2000
50,000
Rochester
1983
Nampa
Pennsylvania
1997
Mountain Top
36,000
M39029/56-351
Glenair
CONNECTOR ACCESSORY; Associated Backshell Military - Specifications: MIL-DTL-38999; Material: COPPER ALLOY; Associated Military - Specifications: MIL-DTL-38999; Contact Gender: FEMALE; DIN Conformity: NO;
BSS138BKW,115
Nexperia
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Finish: TIN; No. of Terminals: 3; Additional Features: LOGIC LEVEL COMPATIBLE;
BAV99
Itt Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
LM107H/883
Advanced Micro Devices
OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Low-Offset: NO;
DS18B20U+
Analog Devices
DS18B20U+ by Analog Devices is a 12-bit temperature sensor with 1-Wire interface. It operates b/w -55 to 125°C, offering ±0.5°C accuracy. Suitable for applications requiring digital output and surface mounting feature.
LM7805CT
Comset Semiconductors
Other Regulators; No. of Terminals: 3; Maximum Input Voltage Absolute: 35 V; Maximum Voltage Tolerance: 5 %; Operating Temperature (TJ-Min): 0 Cel; Technology: BIPOLAR;
SN6505BDBVR
Texas Instruments
SN6505BDBVR by Texas Instruments is a small outline, low profile interface IC with 6 terminals. It operates b/w -55 to 125°C and supports a max output current of 1.5A at supply voltages ranging from 2.25V to 5.5V. Ideal for military-grade applications requiring compact design and high reliability.
261
New England Microwave
Other Interface ICs; No. of Terminals: 14; Package Equivalence Code: FL14(UNSPEC); Power Supplies (V): +-5,-15; Package Body Material: PLASTIC/EPOXY; Surface Mount: YES;
2N2222A
Allegro MicroSystems
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
SS14
Changzhou Galaxy Century Microelectronics
RECTIFIER DIODE; Surface Mount: YES; No. of Phases: 1; Maximum Non Repetitive Peak Forward Current: 40 A; Technology: SCHOTTKY; No. of Elements: 1;
E8WSDC12-32.768KTR
Ecliptek
PARALLEL - FUNDAMENTAL; Mounting Feature: SURFACE MOUNT; Frequency Tolerance: 20 ppm; Aging: 3 PPM/YEAR; Load Capacitance: 12.5 pF; Nominal Operating Frequency: .032768 MHz;
LFXTAL025159REEL
Iqd Frequency Products
LFXTAL025159REEL by IQD Frequency Products is a 32.768 kHz crystal oscillator with 20 ppm frequency tolerance and 40,000 ohm series resistance. It is ideal for applications requiring precise timekeeping, such as real-time clocks in IoT devices or microcontrollers in wearables. The surface-mount design with a drive level of 1 uW makes it suitable for compact electronic systems.
NXP Semiconductors
NXP Semiconductors' BSS138BKW,115 is a N-CHANNEL FET with 60V DS breakdown voltage and 0.32A ID. Ideal for SWITCHING applications, it features a built-in diode, 1.6 ohm RDS(on), and operates in ENHANCEMENT MODE. Suitable for surface mount with GULL WING terminals, it meets AEC-Q101 standards.
FDV304P
Onsemi
The Onsemi FDV304P is a P-CHANNEL FET with 25V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max Drain Current of 0.46A and an Operating Temperature range of -55 to 150 °C. The transistor comes in a PLASTIC/EPOXY package with GULL WING terminals, suitable for surface mount configurations.
MMBT3906LT1G
MMBT3906LT1G by Onsemi is a PNP BJT with VCEsat of 0.4V, hFE of 30, and fT of 250MHz. Ideal for small signal applications in electronics due to its low power dissipation, high transition frequency, and compact SOT-23 package. Suitable for use in temperature-sensitive environments with an operating range from -65°C to 150°C.
BSS138
Micro Commercial Components
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Package Shape: RECTANGULAR; Terminal Position: DUAL;
STM32F405RGT6
STMicroelectronics
STM32F405RGT6 by STMicroelectronics is a 32-bit microcontroller with 2/3.3V power supplies, 16 external interrupts, and 196608 RAM bytes. Ideal for industrial applications, it features CAN(2), I2C(3), SPI(3) connectivity options and operates at a max clock frequency of 26 MHz. With low power mode and DMA support, it offers versatile performance in compact dimensions.
LM358AN
Fairchild Semiconductor
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
LM317T
Sgs-ates Componenti Electronici S P A
Other Regulators; No. of Terminals: 3; JESD-609 Code: e0; Terminal Position: SINGLE; Adjustability: ADJUSTABLE; Maximum Load Regulation (%): 1.5 %;
M24308/2-1F
Air Electro
D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; Mating Info.: MULTIPLE MATING PARTS AVAILABLE; MIL Conformity: YES; Additional Features: STANDARD: MIL-DTL-24308;
BF245BRLRA
BF245BRLRA by Onsemi is an N-CHANNEL RF FET with a 30V DS breakdown voltage. Ideal for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND, it features a SINGLE configuration and operates in DEPLETION MODE. Package: PLASTIC/EPOXY, Shape: ROUND, Terminals: 3.
J309RLRA
J309RLRA by Onsemi is an N-CHANNEL RF FET with a 25V DS Breakdown Voltage, ideal for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND. Featuring a DEPLETION MODE and SILICON element material, it operates at up to 125 °C with a max Crss of 2.5 pF.
BF998B-GS08
Temic Semiconductors
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Terminal Position: DUAL; Terminal Form: GULL WING;
BF512-TAPE-7
BF512-TAPE-7 by NXP Semiconductors is an N-channel RF FET designed for amplifier applications. It features a 20V min DS breakdown voltage, operates in depletion mode, and supports very high frequency bands. This surface-mount transistor ensures reliable performance up to 150 °C.
BF245A/0
BF245A/0 by NXP Semiconductors is an N-channel RF FET designed for amplifier applications. It features a max DS breakdown voltage of 30V, operates in depletion mode, and supports very high frequencies. With a cylindrical package and 3 terminals, it ensures reliable performance up to 150 °C.
BF512TRL
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Elements: 1; Qualification: Not Qualified; Terminal Finish: TIN;
BLM7G1822S-20PBG
Ampleon Netherlands B V
RF Small Signal Field-Effect Transistors;
2SK1242
N-CHANNEL; Maximum Power Dissipation Ambient: .18 W; Maximum Operating Temperature: 150 Cel; Maximum Drain Current (ID): .06 A; Maximum Drain Current (Abs) (ID): .06 A;
BF964
BF964 by NXP Semiconductors is an N-channel RF FET designed for very high frequency applications. It features a 20V min DS breakdown voltage, operates in dual gate depletion mode, and comes in a flat terminal ceramic package. Ideal for RF amplification and signal processing tasks.
2N5486RLRP
Onsemi 2N5486RLRP is an N-CHANNEL RF FET with 10 dB Gp, ideal for AMPLIFIER applications in ULTRA HIGH FREQUENCY BAND. It has a max power dissipation of 0.31 W, operates in DEPLETION MODE at up to 150 °C, and features a JUNCTION technology with SILICON material.
NE3210S01-T1
California Eastern Laboratories
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Highest Frequency Band: X BAND; Additional Features: HIGH RELIABILITY; No. of Elements: 1;
MMBFJ310LT1
MMBFJ310LT1 by Onsemi is an N-CHANNEL RF FET with a 25V DS Breakdown Voltage. Operating in DEPLETION MODE, it's ideal for ULTRA HIGH FREQUENCY AMPLIFIER applications. With a max power dissipation of 0.225W and peak reflow temperature of 235°C, this transistor offers high performance in a SMALL OUTLINE package.
934050280115
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (ID): .03 A; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;
MMBF4416LT1G
MMBF4416LT1G by Onsemi is an N-CHANNEL RF FET with 30V DS breakdown voltage and 10dB power gain, ideal for amplifier applications. It operates in depletion mode at ultra-high frequencies, with a max power dissipation of 0.225W. The transistor features a gull wing terminal form and tin finish, suitable for surface mount configurations in small outline packages.
BF991
Philips Components
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Terminals: 4; Package Shape: RECTANGULAR; Transistor Application: AMPLIFIER;
CLF1G0035-100PU
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Field Effect Transistor Technology: HIGH ELECTRON MOBILITY; Minimum DS Breakdown Voltage: 150 V; JESD-30 Code: R-CDFM-F4;
BF908WRT/R
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Peak Reflow Temperature (C): 260; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
934036560235
N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; JESD-609 Code: e3; Package Shape: RECTANGULAR; Additional Features: LOW NOISE;
BF510,215
The NXP Semiconductors BF510,215 is an N-CHANNEL RF FET with a DEPLETION MODE operating mode. It has a 20V DS breakdown voltage and operates in the VERY HIGH FREQUENCY BAND. Ideal for AMPLIFIER applications, this transistor has a max power dissipation of 0.25W and can handle a max drain current of 0.03A.
JANTXV2N3823
Microsemi
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Highest Frequency Band: VERY HIGH FREQUENCY BAND; Transistor Element Material: SILICON; No. of Terminals: 4;
Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.
J308
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Maximum Feedback Capacitance (Crss): 2.5 pF; No. of Terminals: 3;
J308RL
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Terminal Form: THROUGH-HOLE; JESD-30 Code: O-PBCY-T3; JEDEC-95 Code: TO-92;
J308RL1
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Terminal Position: BOTTOM; Operating Mode: DEPLETION MODE; JESD-30 Code: O-PBCY-T3;
J308RLRA
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Terminal Form: THROUGH-HOLE; Transistor Element Material: SILICON; JESD-30 Code: O-PBCY-T3;
J308RLRE
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; JESD-30 Code: O-PBCY-T3; Terminal Finish: TIN LEAD; Operating Mode: DEPLETION MODE;
J308RLRM
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Terminal Position: BOTTOM; Transistor Element Material: SILICON; Maximum Feedback Capacitance (Crss): 2.5 pF;
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; No. of Elements: 1; Transistor Application: AMPLIFIER; Package Shape: ROUND;
J308-AMMO
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Transistor Element Material: SILICON; Maximum Operating Temperature: 150 Cel; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;
J308-T/R
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Package Shape: ROUND; Qualification: Not Qualified; Maximum Operating Temperature: 150 Cel;
J308L18-1
Vishay Siliconix
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Feedback Capacitance (Crss): 2.5 pF; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Terminal Position: BOTTOM;
J308LTR1
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Feedback Capacitance (Crss): 2.5 pF; No. of Elements: 1; JESD-30 Code: O-PBCY-T3;
J308L-18
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Operating Temperature: 150 Cel; Package Shape: ROUND; JESD-609 Code: e0;
J308L
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Additional Features: LOW NOISE; Terminal Finish: TIN LEAD; JEDEC-95 Code: TO-226AA;
Motorola
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; No. of Elements: 1; Maximum Operating Temperature: 125 Cel; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;
J308RLRB
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Transistor Application: AMPLIFIER; Package Style (Meter): CYLINDRICAL; Maximum Operating Temperature: 125 Cel;
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Package Shape: ROUND; Maximum Feedback Capacitance (Crss): 2.5 pF; Maximum Operating Temperature: 125 Cel;
J308ZL1
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Minimum DS Breakdown Voltage: 25 V; Operating Mode: DEPLETION MODE; Field Effect Transistor Technology: JUNCTION;
J308-TR1
Vishay Intertechnology
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .35 W; Transistor Application: SWITCHING; Terminal Position: BOTTOM;
J308-E3
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; JESD-30 Code: O-PBCY-W3; Transistor Application: SWITCHING; Moisture Sensitivity Level (MSL): 1;
J308-TR1-E3
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .35 W; JEDEC-95 Code: TO-226AA; Field Effect Transistor Technology: JUNCTION;
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