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J308RL1

Onsemi

J308RL1 by Onsemi

J308RL1 by Onsemi is an N-CHANNEL RF FET with 25V DS Breakdown Voltage. Ideal for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND, it features a SINGLE configuration and DEPLETION MODE operation. Package: PLASTIC/EPOXY, Shape: ROUND, Terminals: 3.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Vyrian

USA . 2,399 parts In-Stock

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Digiode

USA . 2,166 parts In-Stock

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Kulean Microsystems

USA . 6,045 parts In-Stock

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Problanco Electronics

Mexico . 5,329 parts In-Stock

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TANS Electronics

Latvia . 3,964 parts In-Stock

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SupplyDigital Components

Austria . 3,550 parts In-Stock

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Corphita

USA . 915 parts In-Stock

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UHIMA Technologies

Türkiye . 848 parts In-Stock

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Corohmni

South Africa . 195 parts In-Stock

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Overview

Enhance your amplifier performance with the J308RL1 RF Small Signal Field Effect Transistor by Onsemi. Designed for ultra-high frequency applications, this N-channel transistor offers superior quality and reliability. With its single configuration and depletion mode operation, it delivers unmatched value and benefits to customers looking to optimize their amplifier circuits. Trust in Onsemi's reputation for excellence and upgrade your electronic designs with the J308RL1 today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body provides durability and protection for the transistor, ensuring it can withstand various operating conditions.

Polarity or Channel Type: N-CHANNEL

N-channel transistors typically have higher mobility and faster switching speeds compared to P-channel transistors, making them suitable for high-performance amplifier applications.

Configuration: SINGLE

Single configuration transistors are easier to design and integrate into circuits, simplifying the overall system layout.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, this transistor can provide high gain and low noise performance for audio or RF amplification circuits.

Minimum DS Breakdown Voltage: 25 V

With a minimum breakdown voltage of 25 V, this transistor can handle higher voltages and provide reliable performance in amplification circuits.

Package Shape: ROUND

The round package shape allows for easy mounting on circuit boards and provides a clean, compact design for space-constrained applications.

Terminal Form: THROUGH-HOLE

Through-hole terminals make it easy to solder the transistor onto a circuit board, ensuring secure connections for reliable operation.

Operating Mode: DEPLETION MODE

Depletion mode transistors are less susceptible to noise and distortion, making them ideal for high-fidelity amplifier applications.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Designed for ultra-high frequency operation, this transistor can provide excellent performance in applications requiring wide bandwidth and fast signal processing.

No. of Terminals: 3

With 3 terminals, this transistor offers flexibility in circuit design and connectivity options, allowing for versatile integration into various amplifier circuits.

Package Style (Meter): CYLINDRICAL

The cylindrical package style provides a compact and streamlined design for easy integration into amplifier circuits with limited space.

Field Effect Transistor Technology: JUNCTION

Junction FET technology offers high input impedance and low noise characteristics, making it ideal for amplifier applications requiring high signal fidelity.

Transistor Element Material: SILICON

Silicon transistors provide excellent performance and reliability, making them a preferred choice for high-frequency amplifier circuits.

Terminal Finish: TIN LEAD

The tin lead terminal finish ensures good solderability and long-term reliability of connections, making it suitable for various operating conditions.

Terminal Position: BOTTOM

Bottom terminal position allows for easy mounting and secure connections on circuit boards, ensuring stable operation in amplifier circuits.

Maximum Feedback Capacitance (Crss): 2.5 pF

With a low feedback capacitance of 2.5 pF, this transistor can provide stable and high-performance amplification with minimal signal distortion.

Technical Specifications

RF Small Signal Field Effect Transistors (FET) J308RL1 attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Additional Features:

EUROPEAN PART NUMBER

Configuration:

Minimum DS Breakdown Voltage:

25 V

Field Effect Transistor Technology:

JUNCTION

Maximum Feedback Capacitance (Crss):

2.5 pF

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

J308RL1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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