Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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J308RLRM by Onsemi is an N-CHANNEL RF FET with a 25V DS Breakdown Voltage. Ideal for AMPLIFIER applications, it operates in DEPLETION MODE at ULTRA HIGH FREQUENCY BAND. Featuring a PLASTIC/EPOXY package, it has 3 terminals and 2.5pF Crss feedback capacitance.
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The plastic/epoxy package provides durability and protection for the RF Small Signal FET, ensuring a longer lifespan and reliable performance.
N-channel FETs typically have better performance and higher mobility than P-channel FETs, making this product a good choice for amplifier applications.
With a minimum breakdown voltage of 25V, this FET can handle higher voltages, providing a margin of safety in amplifier circuits.
Depletion mode FETs are normally ON without any gate bias, allowing for easier biasing in amplifier applications and providing stable operation.
Operating in the ultra-high frequency band, this FET is suitable for high-speed and high-frequency amplifier applications, ensuring efficient signal amplification.
With a low feedback capacitance of 2.5pF, this FET minimizes the potential for parasitic oscillations in amplifier circuits, ensuring stable performance.
RF Small Signal Field Effect Transistors (FET) J308RLRM attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from Onsemi
Configuration:
Minimum DS Breakdown Voltage:
Field Effect Transistor Technology:
Maximum Feedback Capacitance (Crss):
Highest Frequency Band:
JEDEC-95 Code:
JESD-30 Code:
JESD-609 Code:
No. of Elements:
No. of Terminals:
Operating Mode:
Package Body Material:
Package Shape:
Package Style (Meter):
Polarity or Channel Type:
Qualification:
Surface Mount:
Terminal Finish:
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Transistor Element Material:
J308RLRM Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).
President, CEO
Hassane El-Khoury
Executive VP, CFO, Treasurer
Thad Trent
Senior VP
Ross F. Jatou
Aizu Fab
Fabrication
Fab Initiation
1995
Japan
Aizu Wakamatsu
Wafer Capacity
52,000
Si/EPI Fab
2018
Czech Republic
Rožnov pod Radhoštěm
10,000
Expansion Phase 1 for SiC / EPI
2019
14,500
Expansion Phase 2 for SiC / EPI
2024
SiC Fab
2022
USA
Hudson
Bucheon
2013
South Korea
61,000
ISMF - Malaysia
1990
Malaysia
Seremban
95,000
Roznov Device Fab
1987
80,000
Fab 10
2002
East Fishkill
15,000
Burlington
1986
Canada
Gresham
1998
45,000
Bucheon 150mm
2000
50,000
Rochester
1983
Nampa
Pennsylvania
1997
Mountain Top
36,000
SMBJ18CA
Leshan Radio
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
BAV99
Sensitron Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
MBRS340T3G
Onsemi
MBRS340T3G by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.5V and output current of 4A. It operates b/w -65°C to 150°C, making it suitable for various applications requiring high-speed switching and low power loss in a small outline package. The diode's matte tin terminal finish and dual position make it ideal for surface mount PCB designs.
1N4148WS
Bytesonic Electronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
M85049/85-08W02
Amphenol
CIRCULAR CONN ACCESSORY; Shell Sizes: 8; 9; IEC Conformity: NO; MIL-Connector Accessory Name: BAND LOCK ADAPTER; MIL Conformity: YES; DIN Conformity: NO;
LM2931Z-5.0RPG
LM2931Z-5.0RPG by Onsemi is a Fixed Positive Single Output LDO Regulator with 5V Nominal Output Voltage, 0.1A Max Output Current, and 6V Min Input Voltage. It operates in temperatures ranging from -40 to 125 °C and is ideal for applications requiring stable voltage regulation in electronic circuits.
LL4148
Transys Electronics
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
SS14
RECTIFIER DIODE; Surface Mount: YES; Config: SINGLE; No. of Phases: 1; No. of Elements: 1; Maximum Forward Voltage (VF): .5 V;
Taitron Components
Hy Electronic
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
2N7002
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Minimum DS Breakdown Voltage: 60 V; Package Shape: RECTANGULAR;
LM317T
Inchange Semiconductor
Other Regulators; No. of Terminals: 3; Surface Mount: NO; Technology: BIPOLAR; Minimum Output Voltage-1: 1.2 V; No. of Outputs: 1;
87832-1420
Molex
87832-1420 by Molex is a 14-contact board connector with 0.079" pitch, suitable for commercial applications. It features matte tin over nickel finish, glass-filled polyamide insulator, and polarization key for easy assembly. Withstanding voltage of 1400VAC and operating temperature range from -55 to 105°C make it reliable for various electronic devices.
OPA2277UA/2K5
Burr-Brown Corporation
OPERATIONAL AMPLIFIER; Temperature Grade: INDUSTRIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR;
FDV303N
FDV303N by Onsemi is a N-CHANNEL FET with 25V DS Breakdown Voltage, 0.68A Drain Current, and 0.45 ohm On Resistance. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at temperatures ranging from -55 to 150°C. Package style is SMALL OUTLINE with GULL WING terminals for surface mount assembly.
1N4148
Temic Semiconductors
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
Central Semiconductor
Rectron
Philips Components
M39029/56-351
TE Connectivity
TE Connectivity's M39029/56-351 is a CRIMP contact type backshell accessory with rated voltage of 115V. It operates b/w -65 to 175 °C, suitable for MIL-C-39029/56 connectors with wire gauge ranging from 28 to 22 AWG. Ideal for military applications requiring female contacts and copper alloy material.
2SK544D
The Onsemi 2SK544D is an N-CHANNEL RF FET with a max drain current of 0.03A, operating in DEPLETION MODE for AMPLIFIER applications. It features a METAL-OXIDE SEMICONDUCTOR technology and operates in the VERY HIGH FREQUENCY BAND, making it suitable for high-frequency signal amplification in various electronic devices.
BF245ARLRE
BF245ARLRE by Onsemi is an N-CHANNEL RF FET with 30V DS Breakdown Voltage. Ideal for AMPLIFIER applications in ULTRA HIGH FREQUENCY BAND, it features DEPLETION MODE operation and 0.1A ID. Package: PLASTIC/EPOXY, ROUND shape, THROUGH-HOLE terminals.
NE3210S01-T1
Nec Electronics America
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Additional Features: LOW NOISE, HIGH RELIABILITY; Field Effect Transistor Technology: HETERO-JUNCTION;
NE3210S01-T1B
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Terminals: 4; Additional Features: LOW NOISE, HIGH RELIABILITY; Package Style (Meter): MICROWAVE;
BF256B
NXP Semiconductors
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Package Body Material: PLASTIC/EPOXY; Terminal Form: THROUGH-HOLE; No. of Elements: 1;
BLM7G1822S-20PBGY
Ampleon Netherlands B V
RF Small Signal Field-Effect Transistors; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
NE3515S02-T1C-A
Renesas Electronics
NE3515S02-T1C-A by Renesas Electronics is a RF Small Signal FET with N-CHANNEL configuration. It has a min DS Breakdown Voltage of 3V and operates in DEPLETION MODE. This transistor is commonly used as an amplifier in the KU BAND frequency range.
ATF-38143-TR1G
Agilent Technologies
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Terminals: 4; Terminal Position: DUAL; Case Connection: SOURCE;
BF990A-TAPE-7
BF990A-TAPE-7 by NXP Semiconductors is an N-channel RF FET designed for amplifier applications. It features a max DS breakdown voltage of 18V, operates in dual gate depletion mode, and supports ultra-high frequency bands. Its compact surface mount design ensures efficient performance in various electronic devices.
J309RL1
J309RL1 by Onsemi is an N-CHANNEL RF FET with a 25V DS Breakdown Voltage, ideal for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND. Featuring DEPLETION MODE operation, this transistor has a Max Operating Temperature of 125 °C and a Crss of 2.5 pF, housed in a CYLINDRICAL package with THROUGH-HOLE terminals.
Nec Compound Semiconductor Devices
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Finish: TIN LEAD; No. of Elements: 1; Field Effect Transistor Technology: HETERO-JUNCTION;
ATF-54143-BLKG
Broadcom
Broadcom ATF-54143-BLKG is a N-channel FET with 5V DS breakdown voltage, 15dB power gain, and operates in C band. Ideal for amplifier applications, it has a max drain current of 0.12A and can handle up to 0.725W power dissipation at 150°C.
934055959215
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): .03 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Terminal Finish: TIN;
MMBFU310LT1
Onsemi's MMBFU310LT1 is an N-CHANNEL RF FET with 25V DS Breakdown Voltage, ideal for AMPLIFIER applications. Operating in DEPLETION MODE, it offers Ultra High Frequency Band performance and a max power dissipation of 0.225W. With GULL WING terminals and a SMALL OUTLINE package style, it can withstand temperatures up to 150 °C.
2N5484RLRA
2N5484RLRA by Onsemi is an N-CHANNEL RF FET with 16 dB Gp for AMPLIFIER applications. Operating in DEPLETION MODE, it offers ULTRA HIGH FREQUENCY performance with 0.03 A ID. Featuring JUNCTION tech and 1 pF Crss, this THROUGH-HOLE transistor has a CYLINDRICAL package ideal for RF circuits.
BF909R-TAPE-7
BF909R-TAPE-7 by NXP Semiconductors is an N-channel RF FET designed for amplifier applications. It features a max DS breakdown voltage of 7V, operates in the ultra-high frequency band, and supports dual gate enhancement mode. Ideal for compact surface mount designs, it ensures reliable performance up to 150 °C.
BLF184XRU
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Terminal Form: FLAT; JESD-30 Code: R-CDFM-F4;
BF998
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: DUAL GATE, DEPLETION MODE; Transistor Application: AMPLIFIER; Qualification: Not Qualified;
MMBF5484
National Semiconductor
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Package Body Material: PLASTIC/EPOXY; JEDEC-95 Code: TO-236AB;
J310-AMMO
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Feedback Capacitance (Crss): 2.5 pF; Package Style (Meter): CYLINDRICAL; JEDEC-95 Code: TO-92;
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J308
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Maximum Feedback Capacitance (Crss): 2.5 pF; No. of Terminals: 3;
J308RL
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Terminal Form: THROUGH-HOLE; JESD-30 Code: O-PBCY-T3; JEDEC-95 Code: TO-92;
J308RL1
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Terminal Position: BOTTOM; Operating Mode: DEPLETION MODE; JESD-30 Code: O-PBCY-T3;
J308RLRA
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Terminal Form: THROUGH-HOLE; Transistor Element Material: SILICON; JESD-30 Code: O-PBCY-T3;
J308RLRE
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; JESD-30 Code: O-PBCY-T3; Terminal Finish: TIN LEAD; Operating Mode: DEPLETION MODE;
J308ZL1
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Transistor Element Material: SILICON; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Package Shape: ROUND;
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; No. of Elements: 1; Transistor Application: AMPLIFIER; Package Shape: ROUND;
J308-AMMO
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Transistor Element Material: SILICON; Maximum Operating Temperature: 150 Cel; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;
J308-T/R
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Package Shape: ROUND; Qualification: Not Qualified; Maximum Operating Temperature: 150 Cel;
Motorola
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; No. of Elements: 1; Maximum Operating Temperature: 125 Cel; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Package Style (Meter): CYLINDRICAL; No. of Terminals: 3; Qualification: Not Qualified;
J308RLRB
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Transistor Application: AMPLIFIER; Package Style (Meter): CYLINDRICAL; Maximum Operating Temperature: 125 Cel;
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Operating Mode: DEPLETION MODE; Package Style (Meter): CYLINDRICAL; Package Shape: ROUND;
J308RLRF
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Feedback Capacitance (Crss): 2.5 pF; JEDEC-95 Code: TO-92; Transistor Application: AMPLIFIER;
J308RLRM
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Qualification: Not Qualified; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; JESD-30 Code: O-PBCY-T3;
J308RLRP
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Feedback Capacitance (Crss): 2.5 pF; JESD-30 Code: O-PBCY-T3; Transistor Application: AMPLIFIER;
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Package Shape: ROUND; Maximum Feedback Capacitance (Crss): 2.5 pF; Maximum Operating Temperature: 125 Cel;
J308LTR
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; No. of Elements: 1; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY;
J308LTA
Vishay Siliconix
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Transistor Application: SWITCHING;
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Field Effect Transistor Technology: JUNCTION; JEDEC-95 Code: TO-226AA; Operating Mode: DEPLETION MODE;
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