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J308RLRM

Onsemi

J308RLRM by Onsemi

J308RLRM by Onsemi is an N-CHANNEL RF FET with a 25V DS Breakdown Voltage. Ideal for AMPLIFIER applications, it operates in DEPLETION MODE at ULTRA HIGH FREQUENCY BAND. Featuring a PLASTIC/EPOXY package, it has 3 terminals and 2.5pF Crss feedback capacitance.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 825 parts In-Stock

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Vyrian

USA . 624 parts In-Stock

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Problanco Electronics

Mexico . 2,914 parts In-Stock

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TANS Electronics

Latvia . 2,605 parts In-Stock

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Kulean Microsystems

USA . 2,063 parts In-Stock

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UHIMA Technologies

Türkiye . 896 parts In-Stock

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SupplyDigital Components

Austria . 670 parts In-Stock

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Corphita

USA . 477 parts In-Stock

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Corohmni

South Africa . 351 parts In-Stock

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Overview

Enhance your amplifier performance with the J308RLRM RF Small Signal Field Effect Transistor by Onsemi. Known for their high-quality products, Onsemi delivers reliable components for a variety of applications. The J308RLRM offers customers exceptional value with its ultra-high frequency band capabilities and depletion mode operation. Take your projects to the next level with this N-Channel transistor that promises top-notch performance and reliability.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package provides durability and protection for the RF Small Signal FET, ensuring a longer lifespan and reliable performance.

Polarity or Channel Type: N-CHANNEL

N-channel FETs typically have better performance and higher mobility than P-channel FETs, making this product a good choice for amplifier applications.

Minimum DS Breakdown Voltage: 25 V

With a minimum breakdown voltage of 25V, this FET can handle higher voltages, providing a margin of safety in amplifier circuits.

Operating Mode: DEPLETION MODE

Depletion mode FETs are normally ON without any gate bias, allowing for easier biasing in amplifier applications and providing stable operation.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Operating in the ultra-high frequency band, this FET is suitable for high-speed and high-frequency amplifier applications, ensuring efficient signal amplification.

Maximum Feedback Capacitance (Crss): 2.5 pF

With a low feedback capacitance of 2.5pF, this FET minimizes the potential for parasitic oscillations in amplifier circuits, ensuring stable performance.

Technical Specifications

RF Small Signal Field Effect Transistors (FET) J308RLRM attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Configuration:

Minimum DS Breakdown Voltage:

25 V

Field Effect Transistor Technology:

JUNCTION

Maximum Feedback Capacitance (Crss):

2.5 pF

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

J308RLRM Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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