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BF245B,126

NXP Semiconductors

BF245B,126 by NXP Semiconductors

BF245B,126 by NXP Semiconductors is an N-CHANNEL RF FET with 30V DS Breakdown Voltage. It operates in DEPLETION MODE for AMPLIFIER applications at ULTRA HIGH FREQUENCY. With 0.3W power dissipation and 0.025A Drain Current, it has a max operating temperature of 150°C.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 12,329 parts In-Stock

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Digiode

USA . 4,949 parts In-Stock

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4,949

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Anansix

USA . 1,931 parts In-Stock

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VNN

France . 750 parts In-Stock

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750

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Nova Conductors

Japan . 100 parts In-Stock

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100

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Distributors (Availability)

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AZTECH Wire

Italy . 542 parts In-Stock

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$10.938

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542

$10.938

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One Stop Electronics

USA . 1,206 parts In-Stock

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$17.050

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Ampacity Inc.

Singapore . 1,465 parts In-Stock

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$18.050

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$18.050

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UNI Independent Distributors

Spain . 7,363 parts In-Stock

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Corphita

USA . 4,218 parts In-Stock

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Aranea Global

USA . 1,000 parts In-Stock

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Overview

Elevate your projects with the BF245B,126 by NXP Semiconductors, a top-tier RF Small Signal Field Effect Transistor. With unparalleled quality and reliability from a trusted manufacturer, this N-CHANNEL transistor is perfect for amplifier applications in the ultra high frequency band. Its sleek cylindrical package design and matte tin finish offer convenience and durability, making it a valuable choice for enhancing your electronic designs. Unlock the potential of your creations with the BF245B,126 today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, ensuring long-lasting performance.

Polarity or Channel Type: N-CHANNEL

N-Channel transistors typically have better performance characteristics compared to P-Channel transistors, making them a good choice for various applications.

Configuration: SINGLE

Simplifies circuit design and makes it easier to incorporate this transistor into existing systems.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance in such setups.

Minimum DS Breakdown Voltage: 30 V

This high breakdown voltage allows for reliable operation in various voltage conditions, increasing the versatility of the transistor.

Operating Mode: DEPLETION MODE

Depletion mode transistors are known for their simplicity and ease of use in circuits, making this transistor a convenient choice.

Maximum Power Dissipation (Abs): 0.3 W

Can handle a relatively high power dissipation, ensuring stable operation under varying load conditions.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand elevated temperatures without compromising its performance.

Field Effect Transistor Technology: JUNCTION

Junction FET technology offers high gain and low noise characteristics, making this transistor suitable for high-frequency applications.

Maximum Drain Current (ID): 0.025 A

With a maximum drain current of 0.025 A, this transistor can handle moderate current levels, making it suitable for various circuit configurations.

Technical Specifications

RF Small Signal Field Effect Transistors (FET) BF245B,126 attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from NXP Semiconductors

Specs

Configuration:

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (ID):

.025 A

Field Effect Transistor Technology:

JUNCTION

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

BF245B,126 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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