Loading...

BF556A-TAPE-13

NXP Semiconductors

BF556A-TAPE-13 by NXP Semiconductors

BF556A-TAPE-13 by NXP Semiconductors is an N-channel RF FET designed for amplifier applications. It features a 30V min DS breakdown voltage, operates in depletion mode, and supports very high frequency bands. This compact surface mount transistor ensures reliable performance up to 150 °C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,193 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,193

-

-

-

-

Digiode

USA . 2,862 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,862

-

-

-

-

Anansix

USA . 2,266 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,266

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Northwest PG Solutions

USA . 1,534 parts In-Stock

1+ parts

$2.695

100+ parts

-

1k+ parts

-

10k+ parts

-

1,534

$2.695

-

-

-

One Stop Electronics

USA . 895 parts In-Stock

1+ parts

$50.050

100+ parts

-

1k+ parts

-

10k+ parts

-

895

$50.050

-

-

-

UNI Independent Distributors

Spain . 2,089 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,089

-

-

-

-

Native Components

USA . 680 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$2.377

10k+ parts

-

680

-

-

$2.377

-

Corphita

USA . 339 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

339

-

-

-

-

Overview

Unlock superior performance with the BF556A-TAPE-13 from NXP Semiconductors, a leader in innovative technology. This N-channel RF FET is designed for seamless amplification in very high frequency applications, ensuring exceptional reliability and efficiency. Its compact package and advanced silicon technology make it perfect for modern electronics, providing unmatched quality that enhances your designs. Elevate your projects with a trusted solution that delivers lasting value and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package material offers excellent durability and protection against environmental factors, ensuring the transistor's longevity and reliability.

Polarity or Channel Type: N-CHANNEL

N-channel configuration typically offers better performance in terms of speed and drive capabilities, making it suitable for amplifying signals with high efficiency.

Configuration: SINGLE

A single configuration simplifies design and integration into circuits, making it an ideal choice for applications requiring straightforward amplification.

Transistor Application: AMPLIFIER

Designed specifically for amplification applications, this FET ensures high gain and superior fidelity in signal processing.

Surface Mount: YES

Surface mount capability allows for compact design and automated assembly, which can lead to reduced manufacturing costs and improved performance in space-constrained applications.

Minimum DS Breakdown Voltage: 30 V

With a minimum breakdown voltage of 30 V, this FET is suitable for a variety of voltage applications, ensuring reliability under higher voltages.

Package Shape: RECTANGULAR

The rectangular shape contributes to efficient layout and space optimization on PCB designs, which is critical for modern electronics.

Terminal Form: GULL WING

Gull wing terminals provide easy soldering and improved mechanical strength, making assembly more reliable and enhancing the overall build quality.

Operating Mode: DEPLETION MODE

Depletion mode operation allows for improved power handling and adaptability in various circuit designs, particularly in analog and RF applications.

Highest Frequency Band: VERY HIGH FREQUENCY BAND

Rated for very high frequency operation, this FET is ideal for RF applications, enabling reliable performance in wireless communications and high-speed circuits.

No. of Terminals: 3

A three-terminal configuration is common in FET designs, allowing for simplified connections and flexible circuit implementation.

Package Style (Meter): SMALL OUTLINE

The small outline package style enhances space efficiency in design, making it attractive for compact electronic devices.

Field Effect Transistor Technology: JUNCTION

Junction technology provides a stable and robust operation, ensuring consistent performance across varying conditions.

Maximum Operating Temperature: 150 °C

A maximum operating temperature of 150 °C indicates excellent thermal stability, allowing the FET to function effectively in harsh environments.

Transistor Element Material: SILICON

Silicon as the element material offers a well-established performance profile, ensuring reliability and efficiency across a wide range of applications.

Terminal Position: DUAL

Dual terminal positioning enhances versatility in circuit design, allowing for a more flexible arrangement in PCB layouts.

Technical Specifications

RF Small Signal Field Effect Transistors (FET) BF556A-TAPE-13 attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from NXP Semiconductors

Specs

Configuration:

Minimum DS Breakdown Voltage:

30 V

Field Effect Transistor Technology:

JUNCTION

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

BF556A-TAPE-13 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 17